Over the last two decades, extensive research has been done to improve light-emitting diodes (LEDs) designs. Increasingly complex designs have necessitated the use of computational simulations which have provided numerous insights for improving LED performance. Depending upon the focus of the design and the scale of the problem, simulations are carried out using rigorous electromagnetic (EM) wave optics-based techniques, such as finite-difference time-domain and rigorous coupled wave analysis, or through ray optics-based techniques such as Monte Carlo ray-tracing (RT). The former are typically used for modeling nanostructures on the LED die, and the latter for modeling encapsulating structures, die placement, back-reflection, and phosphor downconversion. This paper presents the use of a mixed-level simulation approach that unifies the use of EM wave-level and ray-level tools. This approach uses rigorous EM wave-based tools to characterize the nanostructured die and generates both a bidirectional scattering distribution function and a far-field angular intensity distribution. These characteristics are then incorporated into the RT simulator to obtain the overall performance. Such a mixed-level approach allows for comprehensive modeling of the optical characteristic of LEDs, including polarization effects, and can potentially lead to a more accurate performance than that from individual modeling tools alone.
Over the last two decades there has been extensive research done to improve the design of Organic Light Emitting Diodes (OLEDs) so as to enhance light extraction efficiency, improve beam shaping, and allow color tuning through techniques such as the use of patterned substrates, photonic crystal (PCs) gratings, back reflectors, surface texture, and phosphor down-conversion. Computational simulation has been an important tool for examining these increasingly complex designs. It has provided insights for improving OLED performance as a result of its ability to explore limitations, predict solutions, and demonstrate theoretical results. Depending upon the focus of the design and scale of the problem, simulations are carried out using rigorous electromagnetic (EM) wave optics based techniques, such as finite-difference time-domain (FDTD) and rigorous coupled wave analysis (RCWA), or through ray optics based technique such as Monte Carlo ray-tracing. The former are typically used for modeling nanostructures on the OLED die, and the latter for modeling encapsulating structures, die placement, back-reflection, and phosphor down-conversion. This paper presents the use of a mixed-level simulation approach which unifies the use of EM wave-level and ray-level tools. This approach uses rigorous EM wave based tools to characterize the nanostructured die and generate both a Bidirectional Scattering Distribution function (BSDF) and a far-field angular intensity distribution. These characteristics are then incorporated into the ray-tracing simulator to obtain the overall performance. Such mixed-level approach allows for comprehensive modeling of the optical characteristic of OLEDs and can potentially lead to more accurate performance than that from individual modeling tools alone.
Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.
Photonic Analog-to-Digital Conversion (ADC) has a long history. The premise is that the superior noise performance of
femtosecond lasers working at optical frequencies enables us to overcome the bottleneck set by jitter and bandwidth of
electronic systems and components. We discuss and demonstrate strategies and devices that enable the implementation
of photonic ADC systems with emerging electronic-photonic integrated circuits based on silicon photonics. Devices
include 2-GHz repetition rate low noise femtosecond fiber lasers, Si-Modulators with up to 20 GHz modulation speed,
20 channel SiN-filter banks, and Ge-photodetectors. Results towards a 40GSa/sec sampling system with 8bits resolution
are presented.
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