We suggest advanced wafer engineering (i.e. Angle-ply Laminating Wafers(ALW)) which aim to tailoring and reducing wafer stress and distortion, in order to improve In-Cell Overlay(ICO) and On-Product Overlay(OPO). Especially, we focus ~nm devices adapting 3D-interconnection technology and scheme. In 3D-interconnection technology and scheme, Wafer to Wafer(W2W) bonding process are necessary harnessed. Unfortunately, it naturally induce large stress and distortion which are very sensitive to extrinsic and intrinsic property of wafer(i.e. initial warpage, thin film profile, wafer modulus). These wafer stress and distortion become a high risk in reducing overlay, as the cell size of device shrink. Thus, in development of ~nm devices, main key is to find effective and efficient method of wafer engineering reducing wafer stress and distortion. In order to handle this risk, we suggest and develop Angle-ply Laminating Wafers with heterogeneous crystal-structure, which is based on Classical Lamination Plate Theory(CLPT) in the area of advanced solid mechanics. By utilizing this design concept, anisotropic modulus of top and bottom wafer balance under W2W bonding process. As a result, it induce stress relaxation, distortion and reduce overlay. To verify it rigorously, we introduce the wafer stiffness tailoring method based on CLPT; and construct the simulation model predicting the W2W bonding distortion and photo overlay. We develop the W2W bonding simulation model based on framework of multiscale analysis and pre-verified by comparing with experiment results, which relate to the initial warpage effect on overlay and the thin film profile effect on bondability. Finally, we predict and analyze the effect of angle-ply laminating wafers with respect to a diverse combination of heterogeneous crystal-structure and stacking angle.
EUV lithography has been one of the key factors that enables the continuation of semiconductor scaling beyond N7. While it is a vital technique for the HVM of the most recent advanced logic and DRAM devices, the EUVL still needs more efforts in order to fully exploit its capability and extend the application. One particular aspect that has been considered as of critical importance is the optical/chemical stochastic effects which may cause L/S, contact pattern defects limiting the efficiency of EUVL. The simplest way to alleviate the stochastic effects is to employ the higher EUV exposure dose; however, this approach is impractical as it obviously leads to even lower productivity. In this work, the alternative chemicals - such as EUV PTD developer and NTD rinse which are specifically prepared to overcome the stochastic effects - are examined to enhance the performance efficiency of EUVL. The focused features that thoroughly explored are EUV dose, local CD uniformity, PR swelling, pattern collapse, and defects. It is found that, with the chemical composition modification of developer and rinse, EUV pattern fidelity can be effectively optimized resulting in extended process window and improved productivity. It is expected that this work would not only facilitate the extension of EUV application but also help understand how EUV resists behave when they are under the influence of ancillaries.
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