Non-polar (a-plane) InGaN/GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth
templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been
determined from 2.73×10-2 to 2.58×10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The
polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN
nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial
structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod
templates.
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