KEYWORDS: Silicon, Gold, Field effect transistors, Chemical vapor deposition, Transmission electron microscopy, Thin films, Oxides, Annealing, Scanning electron microscopy, Nanowires
For high speed and performance field effect transistor with high carrier mobility, vertically aligned Si <110> nanowires
is demonstrated by chemical vapor deposition via a vapor-liquid-solid growth mechanism. We found that the
orientation of NWs was changed from <111> direction to <110> direction on a Si (110) substrate with increasing the
growth temperature above ~ 610°C by changing Au-Si eutectic phase. These vertically aligned <110> oriented SiNWs
with significantly high carrier mobility opens up new opportunities for high speed and performance future electronic
device applications.
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