Dry etching has become critical to manufacture the resolution enhancement technique (RET) mask in the ArF
lithography. Among RET masks, alternating phase shift mask (PSM) and chrome-less phase lithography (CPL) mask
require the formation of 180 degrees phase differences by quartz dry etching. There are many error factors, which can
influence CD uniformities on mask and wafers, in Quartz dry etch step such as sidewall angle, phase MTT and
uniformity, micro-trench, and morphology. Furthermore, quartz depth is hard to control because there is no stopping
layer for quartz etching. Additionally, Pattern profile of Chrome layer is very important, because chrome profile affect
sidewall angle for quartz. We have simulated and investigated to identify the influences of many error factors on RET.
Consequently, we investigated characteristics of quartz dry etching process performance and the influences on
resolution, which can be improved by dry etch parameters.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.