The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.
The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.
This paper reports the results of an investigation of the electrical and photoelectrical properties of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction formed by the deposition of thin films PEDOT:PSS on CdZnTe substrates. The Cd1–xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity ρ ≈ 102 Ohm•cm. The values of the series resistance Rs and shunt resistance Rsh of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction were determined from the dependence of their differential resistance Rdif. The temperature dependencies of the height of the potential barrier of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction was determined from the I-V characteristics. The dominating current transport mechanisms through the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunctions were determined.
In the model of effective masses and rectangular potentials, the influence of a homogeneous electric field on the energy spectrum, electron wave functions, and oscillator strengths of intraband quantum transitions in a semiconductor (GaAs/AlxGa1-xAs) quantum dot-quantum ring nanostructure is theoretically investigated. In the presence of an electric field, the stationary Schrödinger equations for quasiparticles are not analytically solved. For their approximate solution, the unknown wave functions are sought in the form of an expansion over a complete set of cylindrically symmetric wave functions, and the electron energy is found from the solution of the corresponding secular equation. It is shown that the electric field significantly affects the localization of the electron in the multilayer nanostructure. In this case, both the electron energy and the strength of the oscillators of intraband quantum transitions depend nonmonotonically on the magnitude of the electric field strength.
The conditions for the production of rectifying heterostructures p-Сu2ZnSnSe4/n-CdTe by the method of RF-magnetron sputtering of Сu2ZnSnSe4 films onto crystalline substrates n-CdTe were investigated. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V characteristics. It is established that the heterostructure generates idle voltage VOC = 0.42 V, short-circuit current ISC = 0.175 mA/cm2 and the fill factor FF = 0.4 when illuminated at 80 mW/cm2.
The results of investigation of optical and electrical properties of thin films of р-(3ZnTe)0.5(In2Te3)0.5 obtained by thermal evaporation and heterostructures based on them are presented in the paper. On the basis of the analysis of the spectra of light absorption, the optical width of the band gap and its dependence on the sputtering mode is determined. The heterostructures of n-Si/p-(3ZnTe)0.5(In2Te3)0.5 and n-CdTe/p-(3ZnTe)0.5(In2Te3)0.5 were obtained and they have straightening properties. Based on the analysis of the temperature dependences of the I-V characteristics, the presence of a tunneling mechanism of electron motion at forward and reverse bias through the energy barrier of the heterojunction is established.
Chromium nitride (CrxN) thin films were deposited by DC reactive magnetron sputtering at different ratios between partial pressures of nitrogen. Electrical and optical properties of the thin films were investigated. Temperature dependences of the resistance R of the CrxN films were measured within the temperature range T ÷ 295-420 K. Based on the dependences α2 = f(hν), the presence of direct allowed interband optical transitions in the CrxN thin films is established and the optical band gap values are determined for all sample before and after annealing.
The results of investigation of optical and electrical properties of p-Cu2FeSnS4 thin polycrystalline films obtained by spray pyrolysis of aqueous solutions of salts of CuCl2∙2H2O, FeCl3∙6H2O and SnCl4∙5H2O and (NH2)2CS are presented. On the basis of the analysis of the light absorption spectra, the optical band gap of the films Eg ≈ 1.72 eV was determined and the dynamics of its change during thermal treatment under low vacuum conditions (0.1 Pa). The conductivity activation energies (Ea = 0.75 eV) and the height of the energy barriers between the grain boundaries (Eb = 0.07 eV) are determined from the temperature dependences of the electrical conductivity.
The investigation influence of selenium on the optical properties of thin films KZTS(Se) was carried out on spectrometer SF-2000 within the interval of wavelengths λ = 0.2 ÷ 1.1 μm. For measuring R attachment Pike was used. Basing on the dependencies α2 on the energy of incident electromagnetic radiation it was determined that in films the direct allowed interband optical transitions occur, and the value of the band gap was obtained.
Structure and optical properties of thin films cadmium CZTS produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 4.0 μm. On the basis of the experiments of transmission and reflection coefficients the index of refraction and optical width of the bandgap of thin films under study are measured by the method based on measuring of the transmission and reflection coefficients. It was found out that there are direct interzone optical transitions in the thin films under study.
MoOx thin films were deposited are deposited by DC reactive magnetron sputtering at different technological conditions. Structural, electrical and optical properties of the thin films were investigated. Temperature dependences of the resistance R of the MoOx films were measured within the temperature range T ÷ 295-420 K. There was established that all samples under investigation had n-type of conductivity. Based on the dependences α2 = f(hν ), the presence of direct allowed interband optical transitions in the MoOx thin films is established and the optical band gap values are determined.
Optical properties of thin films cadmium chalcogenide produced by RF magnetron sputtering of preliminarily synthesized material are studied. Transmission and reflection coefficients are studied in a range from 0.4 to 1.1 μm. On the basis of the experiments of transmission and reflection coefficients the index of refraction and optical width of the bandgap of thin films under study are measured by the Swanepoel's method аnd method based on measuring of the transmission and reflection coefficients. It was found out that there are direct interzone optical transitions in the thin films under study.
The investigation was carried out on the wavelengths interval of 0.9≤λ≤26.6 μm. Basing on the dependencies α2 on the energy of incident electromagnetic radiation it was determined that in crystals the direct allowed interband optical transitions occur, and the value of the band gap was obtained. Of our research follows that these crystals can be used for the manufacture of optical filters.
The values of refraction index, the main reflection index and reflection coefficient for the investigated crystals were
determined on the basis of the study of reflection and transmission coefficients of (3HgSe)0.5(In2Se3)0.5 crystals doped
with Mn or Fe. The investigation was carried out on the wavelengths interval of 0.9≤λ≤26.6 μm. Basing on the
dependencies α2 on the energy of incident electromagnetic radiation it was determined that in crystals the direct allowed
interband optical transitions occur, and the value of the band gap was obtained. The influence of temperature on the
optical transmittance has been studied in the interval of 120-300 K.
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