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Dr. Ivar Tångring
Development Engineer - Epitaxy
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Publications (1)
Proceedings Article | 3 February 2009 Paper
Metamorphic InGaAs telecom lasers on GaAs
I. Tångring, Y. X. Song, D. H. Wu, Z. C. Niu, S. M. Wang, A. Larsson
Proceedings Volume 7230, 723003 (2009) https://doi.org/10.1117/12.808787
KEYWORDS: Gallium arsenide, Indium gallium arsenide, Quantum wells, Gallium, Doping, Silicon, Surface roughness, Aluminum, Molecular beam epitaxy, Epitaxy
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