We report on state-of-the-art performance in violet, multi-mode, edge-emitting laser diodes fabricated on semi-polar oriented GaN substrates. Using these novel crystal orientations, we demonstrate high-power and high-efficiency continuous-wave laser operation. We report on violet laser diodes achieving continuous-wave output powers with peak wall-plug-efficiencies above 40% and optical output powers above 5 W at wavelengths between ~405 and ~415 nm. To the best of the author's knowledge, these wall-plug-efficiencies represents the highest reported to date for a multi-mode GaN diode laser emitting in the range of 400-410 nm. These InGaN-based laser-diodes will offer dramatic improvements in performance, size, weight, and cost of conventional solid-state and gas-based violet laser sources for use in defense, medical, and materials processing applications.
We demonstrate high-speed LiFi data communication of over 20 Gbit/s using visible light from a laser-based white light emitting surface mount device (SMD) product platform that offers 10-100X the brightness of conventional LED sources. Equipped with high power blue laser diodes that offer over 3.5 GHz of 3 dB bandwidth, the laser-based white light SMD modules exhibited a signal-to-noise ratio (SNR) above 15 dB up to 1 GHz. The high SNR was combined with high order quadrature amplitude modulation (QAM) and orthogonal frequency division multiplexing (OFDM) to maximize the bandwidth efficiency. In this work, we present a laser based white light SMD module configured with a single 3W blue laser diode mounted on heat-sink, optically coupled to a collimating optic, achieving a LiFi data rate of up to 10 Gbit/s. Moreover, we demonstrate wavelength division multiplexing (WDM), from a white light SMD module configured with two blue laser diodes separated in peak wavelength to serve as separate communication channels. Using WDM, the dual laser SMD module enabled LiFi data rates of over 20 Gbit/s by simultaneously transmitting data over both channels.
Modern vehicle lighting systems are intended to improve safety on the road by providing the adequate visibility to the drivers under different driving conditions from within a compact housing. Using a high-power semipolar GaN-based blue laser diode (>3W) that pumps a yellow phosphor in a remote position, BMW and SLD co-developed a new high-luminance white point-like source having a peak brightness of over 1000 cd/mm², which is 10 times than that of high-power white LEDs. This results in extending the range of the visibility to the maximum regulatory photometric values (~600m) and in enhancing the contrast of different light distributions in the far-field. New lighting functions, devoted to guiding, assistance and communication, for example between self-driving vehicles and pedestrians, require variable, free patterned light distributions that are clearly perceivable by the driver and/or pedestrians. One way to achieve them is through the use of high-luminance, dynamic light sources with a higher luminous flux and a higher “automotive” lifetime. Such sources should enable a relatively high resolution in the far-field. Multiple efficient, high-power semi-polar blue laser emitters have therefore to be integrated in a thermo-optically stable package. Different patterns are generated on an optimized structured phosphor that is excited by a moving blue laser spot. This dynamic is enabled by a robust, compact, fast beam steering MEMS mirror. The pattern is projected in the far-field using a customized secondary optical system. Eye safety measures that ensure a safe usage in the vehicle and in the manufacturing sites, have to be implemented in such sources.
We present state-of-the-art performance from laser based light sources based on semipolar GaN. Recent advances toward the commercialization of blue, InGaN semipolar laser diodes are described. Additionally, we introduce next generation white light sources based on laser-pumped phosphor architectures.
We present breakthrough performance from green and blue InGaN-based laser diodes fabricated on nonpolar/semipolar
substrates. High-power, high-efficiency, and long-lifetime continuous-wave laser operation is demonstrated using these
novel crystal orientations. For green wavelengths at 520 nm, we report on continuous wave single mode lasing with75
mW of output power and wall plug efficiencies over 2.3%. In the blue regime we describe single-mode lasers operating
with over 23% wall plug efficiency and with output powers greater than 750 mW. These InGaN-based direct-diode
lasers offer significant improvement in performance, size, weight, and cost over conventional gas and solid state lasers.
Furthermore, these devices exhibit robust operation over a broad temperature range, can be directly modulated and do
not contain harmful residual infrared radiation typical of second harmonic generation lasers. These characteristics are
salient considerations for such optical devices in battlefield and other security applications.
We present state-of-the-art performance from green and blue InGaN-based laser diodes fabricated on nonpolar/semipolar
substrates. Using these novel crystal orientations, we demonstrate high-power, high-efficiency, and long-lifetime
continuous-wave laser operation. For green wavelengths at 520 nm, we report on continuous wave single mode lasing
with over 65 mW of output power and wall plug efficiencies over 2%. In the blue regime we describe single-mode
lasers operating with over 23% wall-plug-efficiency and with output powers greater than 750 mW. To the best of the
author's knowledge, this efficiency represents the highest reported to date for a single-mode blue laser. These InGaNbased
devices offer dramatic improvement in performance, size, weight, and cost over conventional gas and solid state
lasers for use in defense, biomedicine, and consumer projection displays.
We present state-of-the-art performance from green, blue, and violet InGaN-based laser diodes fabricated on nonpolar
and semipolar GaN substrates. Using these novel crystal orientations, we demonstrate high power, high efficiency,
continuous-wave operation from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to
500 nm. Additionally, we present the longest reported continuous-wave lasing demonstration of 525 nm and an output
power of over 9 mW at 521 nm. Wall-plug efficiencies of over 25% in the violet region, 17.5% in the blue region, over
5% at 472nm, and 2.2% in the 500 nm range are reported. These InGaN-based devices offer dramatic improvement in
size, weight, and cost over conventional gas and solid state lasers and may enable a variety of new applications in
defense and security.
We present new advances in green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN
substrates. Using these novel crystal orientations, we report high power, high efficiency, continuous-wave operation
from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we
present continuous-wave lasing demonstrations out to 523 nm, representing the longest continuous-wave green laser
emission reported to date. Wall-plug efficiencies of over 25% in the violet region, 16.2% in the blue region, and 2.2% in
the 500 nm range are presented. These InGaN-based devices offer dramatic improvement in size, weight, and cost over
conventional gas or solid state lasers and may enable a variety of new applications in defense, biomedical, industrial, and
consumer projection displays.
We demonstrate 10Gbit/s operation of two different types of monolithic photocurrent driven wavelength converters (PD-WC). These photonic integrated circuits use a Semiconductor Optical Amplifier (SOA)-PIN photodetector receiver to drive an Electro-absorption (EA), or Mach-Zehnder (MZ) modulator that is integrated with a SGDBR tunable laser. We demonstrate improvements in optical bandwidth, insertion losses, device gain, and modulation efficiency.
The evolution of optical communication systems has facilitated the required bandwidth to meet the increasing data rate demands. However, as the peripheral technologies have progressed to meet the requirements of advanced systems, an abundance of viable solutions and products have emerged. The finite market for these products will inevitably force a paradigm shift upon the communications industry. Monolithic integration is a key technology that will facilitate this
shift as it will provide solutions at low cost with reduced power dissipation and foot-print in the form of highly functional optical components based on photonic integrated circuits (PICs). In this manuscript, we discuss the advantages, potential applications, and challenges of photonic integration. After a brief overview of various integration techniques, we present our novel approaches to increase the performance of the individual components comprising highly functional PICs.
Wavelength converters are seen as important to the scalability, flexibility, and cost of future optical networks. These devices have opportunities for deployment in optical switches, routers and add/drop multiplexers. This talk will outline the latest results of monolithic and hybrid photocurrent-driven wavelength converters (PD-WC) based on either the direct modulation of a bipolar cascade SGDBR laser or by external modulation using an Electro-absorption (EA), or Mach-Zehnder (MZ) modulator using integration building blocks such as a semiconductor optical amplifiers (SOA), SGDBR lasers, PIN detectors and EA and MZ modulators. As the input and output waveguides are separate in this configuration of wavelength converter, an optical filter is not required to reject the input signal at the output which is desirable particularly with wavelength tunable applications where the response time of a filter could limit system performance.
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