Recently, fluorescent point defects in silicon have been explored as promising candidates for single photon sources, which may pave the way towards the integration of quantum photonic devices with existing silicon-based electronic platforms. However, the current processes for creating such defects are complex, and commonly require one or two implantation steps. In this work, we have demonstrated implantation-free methods for obtaining G and W-centers in commercial silicon-on-insulator substrates using femtosecond laser annealing. We also demonstrate an enhancement of the color centers’ optical properties by coupling them with photonic structures. For example, we have shown an improvement in emission directivity for G centers by embedding them into silicon Mie resonators fabricated by dewetting, achieving an extraction efficiency exceeding 60% with standard numerical apertures. We will also address the control of emission polarization by embedding color centers in photonic crystals.
In this paper, we describe approaches for the fabrication of single atom devices and spin-based qubits for quantum computing. Addressing of single dopant atoms has the potential to enable precise tunable control over all key electronic properties of basic devices needed for solid-state quantum computing. A new challenge which arises for a variety of qubits is the ability to locate deterministically individual atoms below the surface of the three-dimensional structure to build single or few-atom atom transistors single electron transistors, or diverse quantum sensing devices. Comprehensive applications can be considered for complex donor/acceptor arrangements and this kind of dopant engineering technique has the character of a lithographic method. Scanning Probe Methods are used not only for surface analysis and nanofabrication. We demonstrated in 2004 an integration of a scanning probe with an ion beam similar to the use of a “high resolution dynamic nano-stencil” which enabled the nondestructive imaging of a target together with alignment of an ion beam to device features with a few nanometer accuracy.
KEYWORDS: Magnetism, Diamond, Magnetic sensors, Nitrogen, Polymethylmethacrylate, Crystals, Luminescence, Ion implantation, Chemical vapor deposition, Solid state electronics
Nitrogen Vacancy (NV) centers are point defects in diamond that allow magnetic field sensing based on Optically
Detected Magnetic Resonance (ODMR). They are processed in ultrapure single-domain CVD grown diamond
crystals and can be operated at room temperature. This results in solid-state sensors with a wide variety of
applications. Ensemble of NV centers can be used to perform wide-field magnetic imaging with sensitivity in the
nT range. Single NV centers can also be processed, which allows sensing at the atomic scale. This possibility,
combined with its unique coherence properties, make NV center an ideal candidate for quantum sensing.
Here we demonstrate the ion-implantation of fluorine as an alternative doping method for ZnMgSe/ZnSe
QWs. The photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of
sharp recombination peaks of F-donor bound-excitons and the implantation dose as well as the saturation of the
luminescence intensity related to a donor. When special techniques such as selective implantation through a mask
and registration of single ion impacts are applied on micro-, nano-cavities, the ion implantation can be an attractive
alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.
Color centers in diamond are very promising candidates among the possible realizations for practical singlephoton
sources because of their long-time stable emission at room temperature. The popular nitrogen-vacancy
center shows single-photon emission, but within a large, phonon-broadened spectrum (≈ 100 nm), which strongly
limits its applicability for quantum communication. By contrast, Ni-related centers exhibit narrow emission lines
at room temperature. We present investigations on single color centers consisting of Ni and Si created by ion
implantation into single crystalline IIa diamond. We use systematic variations of ion doses between 108 cm-2 and
1014 cm-2 and energies between 30 keV and 1.8MeV. The Ni-related centers show emission in the near infrared
spectral range (≈ 770 nm to 787 nm) with a small line-width (≈ 3 nm FWHM). A measurement of the intensity
correlation function proves single-photon emission. Saturation measurements yield a rather high saturation count
rate of 77.9kcounts/s. Polarization dependent measurements indicate the presence of two orthogonal dipoles.
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