Efficient ultraviolet (UV) mirrors are essential components in space observatories for UV astronomy. Aluminum mirrors with fluoride-based protective layers are commonly the baseline UV coating technology; these mirrors have been proven to be stable, reliable, and with long flight heritage. However, despite their acceptable optical performance, the single-bounce reflectance values are still too low for use in optical systems in which several reflections are required. Recently, a novel passivation procedure based on the self-fluorination of bare Al has been presented [1, 2]. This research is framed in a collaboration between the Goddard Space Flight Center (GSFC) and the Naval Research Laboratory (NRL), and the experiments are carried out in the Large Area Plasma Processing System (LAPPS) at NRL using bare aluminum samples coated at GSFC coating facilities. The passivation of the oxidized Al is accomplished by using an electron-beam generated plasma produced in a fluorine-containing background to simultaneously remove the native oxide layer while promoting the formation of an AlF3 passivation layer with tunable thickness. Importantly, this new treatment uses benign precursors (SF6) and does not require high substrate temperatures. This novel procedure has demonstrated improved Al mirrors with enhanced FUV reflectivity. Examples of mirrors tuned at several key FUV wavelengths are provided. The LAPPS has been recently upgraded to include a new spectroscopic ellipsometer for real-time, in situ measurements of film thickness and optical constants of the fluoride layer during the plasma treatment. Since this new capability requires precise knowledge of the complex refractive index (n,k) of AlF3, we present optical constants in the 90-2500 nm range obtained from Al mirrors previously prepared using the LAPPS process. The derived optical properties from the AlF3 passivation layer show similar optical properties in the FUV when compared with PVD- and ALD- hot-deposited AlF3.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We report a Ga2O3 transistor device based on a high-GR MOCVD technology (Agnitron Technology’s Agilis 100 reactor). We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD resulting in significantly improved epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer.
Ga2O3 is the only ultra-wide bandgap semiconductor with melt-growth substrate technology similar to that of Si, heterostructure device technology similar to that of the III-Nitride family, and high growth rate (GR) epitaxial technologies such as MOCVD and HVPE to support the development of ultra-high-breakdown voltage devices competitive with SiC technology. We have demonstrated for the first time a β-Ga2O3 MOSFET grown by high-GR MOCVD (Agnitron Technology’s Agilis 100 reactor) with record high mobility of 170 cm2/Vs, despite increased carrier scattering rate in the doped channel, facilitated by a significant improvement in epilayer quality. The high GR demonstrated via this method paves the road for demonstration of high breakdown voltage devices on a thick Ga2O3 buffer layer. [1] M.J. Tadjer et al., J. Phys. D: Appl. Phys. 54 (2021) 034005.
We report the development of terahertz intersubband photodetectors based on GaN/AlGaN quantum wells, covering the frequency range that is fundamentally inaccessible to existing III-V semiconductor devices due to Reststrahlen absorption. Two different approaches have been employed to mitigate the deleterious effects of the intrinsic polarization fields of nitride heterostructures: the use of suitably designed double-step quantum wells, and epitaxial growth on semipolar GaN substrates. Promising results are obtained with both approaches, which could be extended to other device applications as a way to utilize the intrinsic advantages of nitride semiconductors for THz intersubband optoelectronics.
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