With optimized buffer design, we demonstrate a new InAs/AlSb resonant tunneling diode (RTD) on lattice-unmatched semi-insulating (SI) GaAs (100) substrates aiming for terahertz oscillators. To obtain high crystal quality and smooth surface, 5 periods InGaAs/GaAs (2ML/2ML) superlattices (SLs) buffer layer was used as dislocation filters (DFs). Xray diffraction (XRD) measurement showed the full width at half maximum (FWHM) of 331arcsec and surface roughness of 2.4nm over 10μm×10μm. 8-μm-diam diodes were fabricated by standard mesa process. I-V characteristic of the diodes shows negative conductivity at room temperature and a peak current density of 1.79×105A • cm-2 was achieved.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.