The I-V characteristics of AlGaInP/GaInP bulk and multiquantum barrier n-i-n diodes between 20 and 300 K were measured with pA current resolution. When analysed using a thermionic emission model, measured activation energies in the bulk structures were close to the expected conduction band offset. The interplay of other transport mechanisms, including Fowler-Nordheim tunneling and Poole-Frenkel emission was investigated in both the bulk and multiquantum barrier diodes. Transition points between different regimes were observed. Similarities and differences were observed for the bulk and multiquantum barrier diodes. Measured Fowler-Nordheim barrier heights in the bulk barrier diodes agree well with those derived from simulations except in the case of the indirect material at forward bias.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.