We demonstrate long cavity (60.5 ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside curved monolithic GaN lens, a buried tunnel junction (BTJ) current aperture, and a bottomside nanoporous GaN distributed Bragg reflector (DBR). Under pulsed operation (1% duty cycle, 1μs pulse), a VCSEL with a 9μm diameter aperture had a threshold current density of 6.6kA/cm2, a maximum output power of 3mW, and a differential efficiency of 5.6% for a lasing mode at 411nm. Under CW operation, the threshold current density was 7.3kA/ cm2, the differential efficiency was 2.8%, and a peak output power of 1.1mW at rollover was reached. Preliminary farfield patterns are presented and discussed.
A loss analysis of blue semipolar (20-2-1) vertical-cavity surface-emitting lasers with ion implanted apertures (IIA) reveals the presence of loss due to absorption in the implant and other absorbing regions. Devices using a buried tunnel junction (BTJ) scheme to confine the current are then analyzed to find the absence of any excess losses. The effect of changing the number of DBR periods on both device types is simulated to give a 70% and a 95% increase in output power for the IIA and BTJ devices, respectively, with the removal of one period from the top DBR at 10 kA/cm2. The mode structure of two different BTJ devices with different index confinements is compared to show that the 0.034 increase in refractive index difference significantly increased the prevalence of higher order modes.
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