Dr. Jorge M. Poplawski Profile

Dr. Jorge M. Poplawski

at KLA Israel

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Author

Publications (7)

Proceedings Article | 24 May 2004 Paper

Improved overlay metrology device correlation on 90-nm logic processes

Atsushi Ueno, Kouichirou Tsujita, Hiroyuki Kurita, Yasuhisa Iwata, Mark Ghinovker, Jorge Poplawski, Elyakim Kassel, Mike Adel

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534522

KEYWORDS: Overlay metrology, Personal protective equipment, Scanning electron microscopy, Metrology, Scanners, Lithography, Optical design, Metals, Semiconducting wafers, Monochromatic aberrations

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Proceedings Article | 24 May 2004 Paper

A comparison of methods for in-chip overlay control at the 65-nm node

John Robinson, Mark Stakely, Jorge Poplawski, Pavel Izikson, Elyakim Kassel, Mike Adel

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.534510

KEYWORDS: Overlay metrology, Metrology, Scanners, Error analysis, Reticles, Semiconducting wafers, Personal protective equipment, Lithography, Data modeling, Data acquisition

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Proceedings Article | 2 June 2003 Paper

Overlay metrology simulations: analytical and experimental validations

Joel Seligson, Boris Golovanevsky, Jorge Poplawski, Michael Adel, Richard Silver

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483661

KEYWORDS: Semiconducting wafers, Overlay metrology, Metrology, Monte Carlo methods, Silicon, Diffraction, Wafer-level optics, Standards development, Electromagnetism, Optical testing

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Proceedings Article | 2 June 2003 Paper

Characterization of overlay mark fidelity

Mike Adel, Mark Ghinovker, Jorge Poplawski, Elyakim Kassel, Pavel Izikson, Ivan Pollentier, Philippe Leray, David Laidler

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483430

KEYWORDS: Overlay metrology, Semiconducting wafers, Reticles, Chemical mechanical planarization, Statistical analysis, Error analysis, Silicon, Manufacturing, Optical lithography, Metrology

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In this publication we introduce a new metric for process robustness of overlay metrology in microelectronic manufacturing. By straightforward statistical analysis of overlay metrology measurements on an array of adjacent, nominally identical overlay targets the Overlay Mark Fidelity (OMF) can be estimated. We present the results of such measurements and analysis on various marks, which were patterned using a DUV scanner. The same reticle set was used to pattern wafers on different process layers and process conditions. By appropriate statistical analysis, the breakdown of the total OMF into a reticle-induced OMF component and a process induced OMF component was facilitated. We compare the OMF of traditional box-in-box overlay marks with that of new gratingbased overlay marks and show that in all cases the grating marks are superior. The reticle related OMF showed an improvement of 30 % when using the new grating-based overlay mark. Furthermore, in a series of wafers run through an STI-process with different Chemical Mechanical Polish (CMP) times, the random component of the OMF of the new grating-based overlay mark was observed to be 40% lower and 50% less sensitive to process variation compared with Box in Box marks. These two observations are interpreted as improved process robustness of the grating mark over box in box, specifically in terms of reduced site by site variations and reduced wafer to wafer variations as process conditions change over time. Overlay Mark Fidelity, as defined in this publication, is a source of overlay metrology uncertainty, which is statistically independent of the standard error contributors, i.e. precision, TIS variability, and tool to tool matching. Current overlay metrology budgeting practices do not take this into consideration when calculating total measurement uncertainty (TMU). It is proposed that this be reconsidered, given the tightness of overlay and overlay metrology budgets at the 70 nm design rule node and below.

Proceedings Article | 1 December 1997 Paper

Tuning the electroluminescence and photoluminescence of PPV derivatives by protonation-deprotonation processes

Yoav Eichen, Gregory Nakhmanovich, Vladimir Gorelik, Olga Epstein, Jorge Poplawski, Eitan Ehrenfreund

Proceedings Volume 3148, (1997) https://doi.org/10.1117/12.279336

KEYWORDS: Polymers, Electroluminescence, Luminescence, Polymer thin films, Absorption, Analog electronics, Infrared radiation, Thin films, Nitrogen, Coating

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Proceedings Article | 1 December 1997 Paper

Electroabsorption spectroscopy of self-assembled (PPV/SPS) films: size-dependent blue shift

Ofer Levi, Jorge Poplawski, Moeen Tarabia, Eitan Ehrenfreund, Dan Davidov

Proceedings Volume 3145, (1997) https://doi.org/10.1117/12.279294

KEYWORDS: Polymers, Absorption, Heterojunctions, Surface plasmons, Spectroscopy, Polymer thin films, Reflectivity, Semiconductors, Signal detection, X-rays

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Proceedings Article | 30 September 1996 Paper

Transient photoconductivity and light-activated p-n junction device based on bilayer-substituted polythiophene derivatives

Yaron Greenwald, Jorge Poplawski, Eitan Ehrenfreund, Shammai Speiser

Proceedings Volume 2851, (1996) https://doi.org/10.1117/12.251818

KEYWORDS: Polymers, Electrodes, Molecules, Quenching (fluorescence), Photons, Ions, Diodes, Aluminum, Solids, Visible radiation

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Showing 5 of 7 publications

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