Dr. Jos E.M. Haverkort Profile

Dr. Jos E.M. Haverkort

Lecturer at Technische Univ Eindhoven

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Author

Publications (16)

Proceedings Article | 11 June 2024 Presentation

Direct band-gap hexagonal Silicon-Germanium type-I quantum wells

R. Farina, V. van Lange, W. H. Peeters, Max van Hemert, M. Jansen, C. Wakelkamp, Erik P. A. Bakkers, Jos E. Haverkort

Proceedings Volume PC12991, PC1299114 (2024) https://doi.org/10.1117/12.3016717

KEYWORDS: Quantum wells, Silicon, Alloys, Photoluminescence, Germanium, Temperature metrology, Quantum optics experiments, Quantum limits, Quantum light sources, Quantum features

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Proceedings Article | 24 May 2022 Presentation + Paper

Thermodynamics of a nanowire solar cell: towards the ultimate limit

K. Korzun, P. A. L. Koolen, I. Kolpakov, E. Bochicchio, J. Gómez Rivas, J. E. Haverkort

Proceedings Volume 12150, 1215005 (2022) https://doi.org/10.1117/12.2621372

KEYWORDS: Nanowires, Solar cells, Photons, Absorption, Solids, Thermodynamics, Microlens, Nanophotonics, Sun, Modeling

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Proceedings Article | 4 March 2022 Poster + Paper

Towards ultimate limit InP nanowire solar cells

E. Bochicchio, I. Kolpakov, K. Korzun, P. A. L. Koolen, B. van Gorkom, W. J. Berghuis, R. Veldhoven, J. E. Haverkort

Proceedings Volume 11996, 119960D (2022) https://doi.org/10.1117/12.2608084

KEYWORDS: Nanowires, Solar cells, Lenses, Polymethylmethacrylate, Microlens, Photomasks, Electron beam lithography, Sun, Spherical lenses, Oxides

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Proceedings Article | 4 March 2022 Presentation + Paper

Thermodynamics of a nanowire solar cell towards the radiative limit

K. Korzun, P. A. L. Koolen, I. Kolpakov, E. Bochicchio, J. Gómez Rivas, J. E. Haverkort

Proceedings Volume 11996, 1199609 (2022) https://doi.org/10.1117/12.2608671

KEYWORDS: Nanowires, Solar cells, Photons, Thermodynamics, Solids, Solar radiation models, Absorption, Sun, Solar radiation, Silver

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Proceedings Article | 4 March 2022 Presentation + Paper

Extremely low material consumption III/V solar cell

I. Kolpakov, E. Bochicchio, K. Korzun, P. A. L. Koolen, B. van Gorkom, W. J. Berghuis, R. Veldhoven, J. E. Haverkort

Proceedings Volume 11996, 1199607 (2022) https://doi.org/10.1117/12.2608529

KEYWORDS: Nanowires, Solar cells, Microlens, Absorption, Microlens array, Silicon, Scanning electron microscopy, Polymethylmethacrylate, Measurement devices, Finite-difference time-domain method

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Proceedings Article | 9 March 2020 Presentation

Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)

David Busse, Elham Fadaly, Victor van Lange, Jens Réne Suckert, Alain Dijkstra, Marvin van Tilburg, Claudia Rödl, Philipp Staudinger, Marcel Verheijen, Sebastian Kölling, Dorian Ziss, Jürgen Furthmüller, Friedhelm Bechstedt, Julian Stangl, Heinz Schmid, Silvana Botti, Erik P. A. Bakkers, Jos E. Haverkort, Jonathan Finley

Proceedings Volume 11301, 113010K (2020) https://doi.org/10.1117/12.2544968

KEYWORDS: Nanowires, Photonic crystals, Crystals, Crystallography, Luminescence, Optical pumping

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Proceedings Article | 16 September 2014 Paper

Direct band gap wurtzite GaP nanowires for LEDs and quantum devices

S. Assali, D. Kriegner, I. Zardo, S. Plissard, M. Verheijen, J. Stangl, J. E. M. Haverkort, E. Bakkers

Proceedings Volume 9174, 917405 (2014) https://doi.org/10.1117/12.2063865

KEYWORDS: Crystals, Light emitting diodes, Gallium, Visible radiation, Aluminum, Semiconductors, Arsenic, Luminescence, Nanoimprint lithography, Nanowires

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Proceedings Article | 8 September 2006 Paper

Anomalous radiative lifetime in quantum rods

D. Sreenivasan, J. Haverkort, R. Nötzel, S. Maksimenko, G. Ya. Slepyan

Proceedings Volume 6328, 63280T (2006) https://doi.org/10.1117/12.680363

KEYWORDS: Excitons, Polaritons, Quantum dots, Reflectivity, Laser beam diagnostics, Electromagnetic coupling, Electromagnetism, Picosecond phenomena, Chemical species, Luminescence

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Proceedings Article | 20 April 2006 Paper

Time-resolved reflectivity of low-temperature grown InAs/GaAs quantum dots

Dilna Sreenivasan, Jos Haverkort, Huahan Zhan, Tom Eijkemans, Richard Nötzel

Proceedings Volume 6195, 619520 (2006) https://doi.org/10.1117/12.662740

KEYWORDS: Reflectivity, Gallium arsenide, Electrons, Gallium, Reflection, Luminescence, Absorption, Quantum dots, Ultrafast phenomena, Laser beam diagnostics

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Proceedings Article | 26 July 2004 Paper

Ultrashort Mach-Zehnder space switch based on quantum dots

Ravindran Prasanth, Jos Haverkort, Joachim Wolter

Proceedings Volume 5383, (2004) https://doi.org/10.1117/12.536777

KEYWORDS: Absorption, Quantum dots, Quantum wells, Switches, Excitons, Waveguides, Refractive index, Polarization, Oscillators, Particles

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Proceedings Article | 22 May 1998 Paper

Design of coupled InGaAs/InP quantum wells for interferometric switching at 1.55 um

B. Dorren, A. Silov, M. Leys, Jos Haverkort, Joachim Wolter, D. Maat, Y. Zhu, Y. Siang Oei, F. Groen

Proceedings Volume 3490, (1998) https://doi.org/10.1117/12.308967

KEYWORDS: Quantum wells, Absorption, Switching, Indium gallium arsenide, Interferometry, Polarization, Switches, Waveguides, Phase shifting, Transparency

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An InGaAs/InP coupled quantum well layer sequence specially designed for Mach-Zelmder interferometric space switching is presented. Each coupled quantum well consists of three 27A InGaAs strained quantum wells separated by 1 iA InP barriers. The structure shows a red shift of the absorption edge as high as 8Onm with 1OV applied bias. Using these coupled quantum wells, we realized a Mach-Zehnder interferometric space switch with low attenuation and a switching voltage of 3 .1V for 4mm long phase shifting sections. Furthermore, we realized full polarization independent switching using 0.85% tensile strained and coupled quantum wells. However, we found that the electrorefraction in this structure was not optimal since the red shift of the lowest confined level and the blue shift of higher confined levels yield opposite contributions to the electrorefraction. This compensation can be circumvented in asymmetrical coupled quantum wells resulting in a 1 0 times larger electrorefraction. Coupled quantum wells (CQW) increase the degree of freedom in material design. For instance, the value ofthe bandgap, the total CQW well width and the bias induced change in overlap between electron and hole envelope wavefunctions can be tuned. These tools can be used to optimize a material design for specific applications. In this paper we first present a MZI space switch using a CQW design with optimized Quantum Confined Stark Effect (QCSE) bandgap shift. Secondly we will introduce an improved layer design using asymmetric coupled quantum wells. These wells are optimized for large bias induced changes in the electron-hole envelope wavefunction overlap. The most important design constraints for a material for a Mach-Zehnder interferometric (MZI) space switch at 1 .55tm are waveguide transparency, physical length and polarization independence. When using QCSE tuning sections with InGaAs/InP quantum wells, the QW-thickness is limited to a maximum of 40A for preserving waveguide transparency. On the other hand, such a small QWthickness is far from ideal for an appreciable QCSE resulting in a small index ofrefraction change and thus in long switches. The bandgap shift due to the Quantum Confined Stark Effect increases rapidly with increasing quantum well width [1]. The QCSE in a CQW structure with three 27A InGaAs quantum wells and very thin 1 1A InP barriers is similar to the QCSE in a single 103A quantum well (3x27A InGaAs + 2x1 iA InP). This is due to the excellent coupling of the carrier wavefunctions between the neighboring 27A quantum wells. The inset in figure 1 shows such CQW structure with the envelope wavefunctions of electron and hole ground level. These CQW's combine a room temperature bandgap at 1 390nm, necessary for waveguide transparency at 1 550nm, with a total CQW well width of 103A required for an optimized QCSE red shift

Proceedings Article | 6 May 1994 Paper

Real-space transfer and current filamentation in AlGaAs/GaAs heterojunctions subjected to high-electric fields

Joachim Wolter, Jos Haverkort, Peter Hendriks, E. Zwaal

Proceedings Volume 2142, (1994) https://doi.org/10.1117/12.175901

KEYWORDS: Ionization, Heterojunctions, Gallium arsenide, Astatine, Modulation, Scattering, Aluminum, Silicon, Resistance, Phonons

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Proceedings Article | 6 May 1994 Paper

Ultrafast carrier capture in quantum well structures

Paul Blom, Jos Haverkort, Jan Claes, Pieter van Hall, Joachim Wolter

Proceedings Volume 2142, (1994) https://doi.org/10.1117/12.175906

KEYWORDS: Quantum wells, Luminescence, Picosecond phenomena, Phonons, Electrons, Time metrology, Pulsed laser operation, Gallium arsenide, Laser energy, Excitons

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Proceedings Article | 19 November 1993 Paper

Carrier capture time: relevance to laser performance

Jos Haverkort, Paul Blom, Joachim Wolter

Proceedings Volume 1985, (1993) https://doi.org/10.1117/12.162815

KEYWORDS: Quantum wells, Semiconductors, Phonons, Scattering, Quantum efficiency

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Proceedings Article | 21 October 1992 Paper

Reduction of the threshold current in quantum-well lasers by optimization of the carrier capture efficiency

Paul Blom, Pieter van Hall, Jos Haverkort, Joachim Wolter

Proceedings Volume 1677, (1992) https://doi.org/10.1117/12.137676

KEYWORDS: Quantum wells, Scattering, Quantum efficiency, Laser damage threshold, Modulation, Laser scattering, Picosecond phenomena, Cladding, Heterojunctions, Bulk lasers

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Proceedings Article | 1 February 1991 Paper

Modulation doping and delta doping of III-V compound semiconductors

Peter Hendriks, E. Zwaal, Jos Haverkort, Joachim Wolter

Proceedings Volume 1362, (1991) https://doi.org/10.1117/12.24504

KEYWORDS: Doping, Gallium arsenide, Optoelectronic devices, Modulation, Heterojunctions, Modulators, Silicon, Physics, Ionization, Semiconductors

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Showing 5 of 16 publications

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