We present an analytic method to determine the modulus of the coupling coefficient between polarization modes in the semiconductor optical amplifier (SOA) subjected to a cross polarization modulation (XPolM). We evaluate also the impact of the dependence in polarization of the gain on mode conversion. This analysis is based on the association of the coupled mode theory with experimental measurements of the Stokes parameters at the output of the SOA. A
validation of the model is made with a good accuracy.
A new scheme for all optical XOR and NOTXOR based on UNI (Ultrafast Nonlinear Interferometer) technique is demonstrated on a 10 GBps data pattern. As a difference between our schema with the old UNI structure, we employ a counter-propagation geometry that avoided the use of a filter and wavelength converter for the elimination of the
control signal at the output of the system. Likewise in this scheme only one polarization maintaining fiber (PMF) is used.
In this communication we present all-optical AND, NOT XOR and NOR gates with two and three input logic signals using the cross-polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA). The gates utilize only a SOA and they need neither an inversion stage nor an additional synchronized clock. The XpolM effect is discussed as well as its repercussion on the polarization-state of a probe beam crossing a SOA perturbed by the power of a control beam. Based on this discussion, we present the design criteria allowing the implementation of the all-optical logic gates with two and three input logic signals. Finally the gates are experimentally demonstrated with input logic signals modulated with a 2.5 Gb/s NRZ code with a pseudo-random data sequence of 223-1 length.
In this communication, we demonstrate experimentally a new design for all-optical AND and NAND gates operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gates here described differ from other ones developed before using semiconductor optical amplifiers by their ability to operate on non-degenerate input signals with an output signal wavelength independent of the input signals wavelength.
In this communication we present a NOT XOR gate using the cross-polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA). The gate utilizes only a SOA and it needs neither an inversion stage nor an additional synchronized clock. We demonstrate that the XPolM effect can rotate 73.5C the polarization-state of a CW beam when the power of a control beam changes from 0 to 300 (mu) W. The control and CW beams are introduced into the amplifier with a linear-polarization near to the unperturbed amplifier TM axis where the waveguide eigenmodes modification has a strong participation on the XPolM effect.
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