The innovative method of μLEDs fabrication is presented. The light emission area was defined by a size of the tunnel junction (TJ) embedded inside diode. The epitaxial structures were grown entirely by plasma assisted molecular beam epitaxy (PAMBE) on (0001) bulk GaN crystals. The PAMBE grown LED structure emitting light at 450 nm was capped with TJ region and 100 nm n-type GaN. The emission size of μLEDs was defined by ion implantation of n-type GaN and TJ region. The entire surface of the wafer is atomically flat, ready for the next epitaxial process, which is important e.g. for TJ µLEDs red-green-blue displays with a stack of 3 µLEDs.
Incorporation of tunnel junctions (TJs) to device structure enabled vertical integration of multicolor light emitting diodes (LEDs) and laser diodes (LDs). The TJs allows to control the current path in distributed-feedback LDs and micro-LEDs. It opens possibility to design new architecture devices like “inverted” LEDs or LDs with TJs located below active region. These devices have the sequence of p and n type layers similar to structures grown on hypothetical p-type (0001) GaN substrate, which is beneficial for high carrier injection efficiency, and enables operation at cryogenic temperatures. Finally, we also discuss the properties of bi-directional LEDs and wavelength-tunable LEDs.
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