Ms. Jun-Taek Park Profile

Jun-Taek Park

Technical Staff at SK Hynix Inc

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 17 April 2014 Paper

EUV stochastic noise analysis and LCDU mitigation by etching on dense contact-hole array patterns

Seo Min Kim, Sunyoung Koo, Jun-Taek Park, Chang-Moon Lim, Myoungsoo Kim, Chang-Nam Ahn, Anita Fumar-Pici, Alek Chen

Proceedings Volume 9048, 90480A (2014) https://doi.org/10.1117/12.2048282

KEYWORDS: Etching, Liquid phase epitaxy, Stochastic processes, Photomasks, Metrology, Critical dimension metrology, Printing, Scanning electron microscopy, Extreme ultraviolet, Error analysis

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Proceedings Article | 23 March 2012 Paper

Study on CD variation in the vicinity of the exposure field edge in EUV lithography

Chang-Moon Lim, Seokkyun Kim, Jun-Taek Park, Yoonsuk Hyun, Jong-Su Lee, Sunyoung Koo, Myoungsoo Kim, Hyosang Kang

Proceedings Volume 8322, 83221O (2012) https://doi.org/10.1117/12.916108

KEYWORDS: Critical dimension metrology, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Optical proximity correction, Scanners, Deep ultraviolet, EUV optics, Semiconductors, Reticles

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Proceedings Article | 23 March 2012 Paper

Effect of extreme-ultraviolet pellicle support to patterned mask

Ki-ho Ko, Eun-Jin Kim, Ji-Won Kim, Jun-Taek Park, Chang-Moon Lim, Hye-keun Oh

Proceedings Volume 8322, 832230 (2012) https://doi.org/10.1117/12.918019

KEYWORDS: Pellicles, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Thin films, Silicon, Computer simulations, Lithography, Distortion, Data modeling

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Proceedings Article | 8 April 2011 Paper

Comparison between ADT and PPT for 2X DRAM patterning

Sunyoung Koo, Jun-Taek Park, Yoonsuk Hyun, Keundo Ban, Seokkyun Kim, Chang-Moon Lim, Donggyu Yim, Sungki Park

Proceedings Volume 7969, 79691N (2011) https://doi.org/10.1117/12.879450

KEYWORDS: Extreme ultraviolet lithography, Nanoimprint lithography, Optical lithography, Extreme ultraviolet, Photomasks, Lithography, Lithographic illumination, Line width roughness, High volume manufacturing, Scanners

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Proceedings Article | 6 April 2011 Paper

Feasibility of EUVL thin absorber mask for sub-32nm half pitch patterning

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Sungki Park

Proceedings Volume 7969, 79690Y (2011) https://doi.org/10.1117/12.879371

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reticles, Reflectivity, Extreme ultraviolet, Semiconducting wafers, Nanoimprint lithography, Printing, Optical lithography, Scanning electron microscopy

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Proceedings Article | 22 March 2010 Paper

Practical flare compensation strategy for DRAM device

Chang-Moon Lim, Jun-Taek Park, James Moon, Sunyoung Koo, Yoonsuk Hyun, Hyeong Soo Kim, Donggyu Yim, Sung-Ki Park

Proceedings Volume 7636, 76362B (2010) https://doi.org/10.1117/12.846509

KEYWORDS: Point spread functions, Extreme ultraviolet lithography, Extreme ultraviolet, Light scattering, Surface roughness, Convolution, Projection systems, Photomasks, Stray light, Optical lithography

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Proceedings Article | 20 March 2010 Paper

Feasibility of EUVL thin absorber mask for minimization of mask shadowing effect

Yoonsuk Hyun, Juntaek Park, Sunyoung Koo, Yongdae Kim, Keundo Ban, Seokkyun Kim, Changmoon Lim, Donggyu Yim, Hyeongsoo Kim, Sungki Park

Proceedings Volume 7636, 763614 (2010) https://doi.org/10.1117/12.846506

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Reticles, Nanoimprint lithography, Critical dimension metrology, Extreme ultraviolet, Printing, Reflectivity, Silicon, Ruthenium

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Proceedings Article | 4 March 2010 Paper

Applications of MoSi-based binary intensity mask for sub-40nm DRAM

Tae-Seung Eom, Eun-Kyoung Shin, Eun-Ha Lee, Yoon-Jung Ryu, Jun-Taek Park, Sunyoung Koo, Hye-Jin Shin, Seung-Hyun Hwang, Hee-Youl Lim, Sarohan Park, Kyu-Tae Sun, Noh-Jung Kwak, Sung-Ki Park

Proceedings Volume 7640, 76402J (2010) https://doi.org/10.1117/12.846728

KEYWORDS: Photomasks, Binary data, Transmittance, Diffraction, Chromium, Polarization, Lithography, Scanners, Nanoimprint lithography, Optical lithography

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In this paper, we will present applications of MoSi-based binary intensity mask for sub-40nm DRAM with hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination and mask materials in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:760Å , transmittance 6% ), conventional Cr ( 1030Å ) BIM (Binary Intensity Mask), MoSi-based BIM ( MoSi:590Å , transmittance 0.1%) and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is a line and space pattern and the other is a contact hole pattern through mask structure. Various line and space pattern is also through 38nm to 50nm half pitch studied for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and the first diffraction orders are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, thereby transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in the case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light.1 Process windows and mask error enhancement factors are measured with respect to several types of mask structure. In the case of one dimensional line and space pattern, MoSi-based BIM and conventional Cr BIM show the best performance through various pitches. But in the case of hole DRAM cell pattern, it is difficult to find out the advantage of BIM except of exposure energy difference. Finally, it was observed that MoSi-based binary intensity mask for sub- 40nm DRAM has advantage for one dimensional line and space pattern.

Proceedings Article | 18 March 2009 Paper

EUV-patterning characterization using a 3D mask simulation and field EUV scanner

Jun-Taek Park, Yoon-Suk Hyun, Chang-Moon Lim, Tae-Seung Eom, Sunyoung Koo, Sarohan Park, Suk-Kyun Kim, Keun-Do Ban, Hyun-Jo Yang, Chang-Il Oh, Byung-Ho Nam, Chang-Reol Kim, HyeongSoo Kim, Seung-Chan Moon, Sungki Park

Proceedings Volume 7271, 72711G (2009) https://doi.org/10.1117/12.814407

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Scanners, Critical dimension metrology, Extreme ultraviolet, Silicon, Optical lithography, Deep ultraviolet, Semiconducting wafers, Laser scanners

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Proceedings Article | 18 March 2009 Paper

Comparative study of DRAM cell patterning between ArF immersion and EUV lithography

Tae-Seung Eom, Sarohan Park, Jun-Taek Park, Chang-Moon Lim, Sunyoung Koo, Yoon-Suk Hyun, HyeongSoo Kim, Byung-Ho Nam, Chang-Reol Kim, Seung-Chan Moon, Noh-Jung Kwak, Sungki Park

Proceedings Volume 7271, 727115 (2009) https://doi.org/10.1117/12.814378

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Double patterning technology, Lithography, Etching, Critical dimension metrology, Scanners, Immersion lithography

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In this paper, we will present comparison of DRAM cell patterning between ArF immersion and EUV lithography which will be the main stream of DRAM lithography. Assuming that the limit of ArF immersion single patterning is around 40nm half pitch, EUV technology is positioned on essential stage because development stage of device manufacturer is going down sub-40nm technology node. Currently lithography technology, in order to improve the limitation of ArF immersion lithography, double patterning technology (DPT) and spacer patterning technology (SPT) have been examined intensively. However, double patterning and spacer patterning technology are not cost-effective process because of complexity of lithography process such as many hard mask stacks and iterative litho, etch process. Therefore, lithography community is looking forward to improving maturity of EUVL technology. In order to overcome several issues on EUV technology, many studies are needed for device application. EUV technology is different characteristics with conventional optical lithography which are non-telecentricity and mask topography effect on printing performance. The printed feature of EUV is shifted and biased on the wafer because of oblique illumination of the mask. Consequently, target CD and pattern position are changed in accordance with pattern direction, pattern type and slit position of target pattern.1 For this study, we make sub-40nm DRAM mask for ArF immersion and EUV lithography. ArF attenuated PSM (Phase Shift Mask) and EUV mask (LTEM) are used for this experiment; those are made and developed by in-house captive maskshop. Simulation and experiment with 1.35NA ArF immersion scanner and 0.25NA EUV full field scanner are performed to characterize EUV lithography and to compare process margin of each DRAM cell. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 24nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE and Solid-EUV are also used in order to study characteristics of EUV patterning through rigorous EMF simulation. We also investigated shadowing effect according to pattern shape and design rule respectively. We find that vertical to horizontal bias is around 2nm on 32nm to 40nm half pitch line and space pattern. In the case of DRAM cell, we also find same result with line and space pattern. In view of mask-making consideration, we optimize absorber etch process. So we acquire vertical absorber profile and mask MTT(Mean To Target) within 10% of target CD through several pitch. Process windows and mask error enhancement factors are measured with respect to several DRAM cell pattern. In the case of one dimensional line and space and two dimensional brick wall pattern, vertical pattern shows the best performance through various pitches because of lower shadowing effect than horizontal pattern. But in case of contact hole DRAM cell pattern such as storage node pattern, it has bigger MEF value than one or two dimensional pattern because of independency of shadowing effect. Finally, we compare with 2x, 3x and 4x DRAM cell patterning performance in terms of pattern fidelity, slit CD uniformity and shadowing effect.

Proceedings Article | 4 December 2008 Paper

Study on imaging characterization of ArF high index immersion lithography

Sarohan Park, Jun-Taek Park, Kilyoung Lee, Tae-Seung Eom, Jin-Soo Kim, Hyeong-Soo Kim, Seung-Chan Moon

Proceedings Volume 7140, 71401K (2008) https://doi.org/10.1117/12.804651

KEYWORDS: Photomasks, Optical lithography, Reflectivity, Immersion lithography, Lithography, Image processing, Image enhancement, Polarization, Semiconducting wafers, Transmittance

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Proceedings Article | 7 March 2008 Paper

Comparative study of binary intensity mask and attenuated phase shift mask using hyper-NA immersion lithography for sub-45nm era

Tae-Seung Eom, Jun-Taek Park, Jung-Hyun Kang, Sarohan Park, Sunyoung Koo, Jin-Soo Kim, Byoung-Hoon Lee, Chang-Moon Lim, HyeongSoo Kim, Seung-Chan Moon

Proceedings Volume 6924, 69240H (2008) https://doi.org/10.1117/12.772246

KEYWORDS: Photomasks, Chromium, Binary data, Polarization, Pellicles, Diffraction, Scanners, Phase shifts, Lithography, Immersion lithography

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In this paper, we will present comparison of attenuated phase shift mask and binary intensity mask at hyper-NA immersion scanner which has been the main stream of DRAM lithography. Some technical issues will be reported for polarized illumination in hyper-NA imaging. One att.PSM (Phase Shift Mask) and three types of binary intensity mask are used for this experiment; those are ArF att.PSM ( MoSi:Å ), thick Cr ( 1030Å ) BIM (Binary Intensity Mask), thin Cr ( 590Å ) BIM and multi layer ( Cr:740Å / MoSi:930Å ) BIM. Simulation and experiment with 1.35NA immersion scanner are performed to study influence of mask structure, process margin and effect of polarization. Two types of DRAM cell patterns are studied; one is an isolation pattern with a brick wall shape and another is a storage node pattern with contact hole shape. Line and space pattern is also studied through 38nm to 50nm half pitch for this experiment. Lithography simulation is done by in-house tool based on diffused aerial image model. EM-SUITE is also used in order to study the influence of mask structure and polarization effect through rigorous EMF simulation. Transmission and polarization effects of zero and first diffraction order are simulated for both att.PSM and BIM. First and zero diffraction order polarization are shown to be influenced by the structure of masking film. As pattern size on mask decreases to the level of exposure wavelength, incident light will interact with mask pattern, and then transmittance changes for mask structure. Optimum mask bias is one of the important factors for lithographic performance. In the case of att.PSM, negative bias shows higher image contrast than positive one, but in case of binary intensity mask, positive bias shows better performance than negative one. This is caused by balance of amplitude between first diffraction order and zero diffraction order light. Process windows and mask error enhancement factors are measured with respect to various design rules, i.e., different k1 levels at fixed NA. In the case of one dimensional line and space pattern, thick Cr BIM shows the best performance through various pitches. But in case of two dimensional DRAM cell pattern, it is difficult to find out the advantage of BIM for sub-45nm. It needs further study for two dimensional patterns. Finally, it was observed that thick Cr binary intensity mask for sub-45nm has advantage for one dimensional line and space pattern.

Proceedings Article | 26 March 2007 Paper

Hyper NA polarized imaging of 45nm DRAM

Chang-Moon Lim, Sarohan Park, Yoon-Suk Hyun, Jin-Soo Kim, Tae-Seung Eom, Jun-Taek Park, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 6520, 65200B (2007) https://doi.org/10.1117/12.712442

KEYWORDS: Polarization, Optical lithography, Photomasks, Birefringence, Transmittance, Scanners, Lithography, Lithographic illumination, Immersion lithography, Critical dimension metrology

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Proceedings Article | 21 March 2007 Paper

Photoresist adhesion effect of resist reflow process

Joon-Min Park, Ji-Eun Lee, Moon-Seok Kim, Jung-Hun Kim, Jai-Soon Kim, Sung-Muk Lee, Jun-Tack Park, Chul-Kyu Bok, Seung-Chan Moon, Seung-Wook Park, Joo-Yoo Hong, Hye-Keun Oh

Proceedings Volume 6519, 65193O (2007) https://doi.org/10.1117/12.712498

KEYWORDS: Photoresist processing, Photoresist materials, Semiconductors, Glasses, Thin films, Lithography, Physics, Chemistry, Computer simulations, Applied physics

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Proceedings Article | 29 March 2006 Paper

Reflow modeling for elongated contact hole shape

Ji-Eun Lee, Dai-Gyoung Kim, Kang Baek Kim, Mi-Rim Jung, Hye-Young Kang, Jong-Sun Kim, Joo-Yoo Hong, Hye-Keun Oh, Jun-Tack Park

Proceedings Volume 6153, 61533T (2006) https://doi.org/10.1117/12.656286

KEYWORDS: Photoresist processing, Interfaces, Critical dimension metrology, Glasses, Resolution enhancement technologies, Optical proximity correction, Thin films, Mathematical modeling, Lithography, Motion models

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Proceedings Article | 20 March 2006 Paper

Heterogeneous diffusion model for simulation of resist process

Chang Moon Lim, Jun Taek Park, Seo Min Kim, Hyeong Soo Kim, Seung Chan Moon

Proceedings Volume 6154, 61542S (2006) https://doi.org/10.1117/12.656923

KEYWORDS: Diffusion, Lithography, Photoresist processing, Performance modeling, Optical lithography, Photomicroscopy, Image processing, Optical proximity correction, Process modeling, Critical dimension metrology

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Proceedings Article | 4 May 2005 Paper

0.31k1 ArF lithography for 70-nm DRAM

Cheolkyu Bok, Ki-Lyoung Lee, Jun-Taek Park, Young-Sun Hwang, Tae-Seung Eom, Seo-Min Kim, Geunsu Lee, Jae-Chang Jung, Chang-Moon Lim, Seung-Chan Moon, Jin-Woong Kim

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599348

KEYWORDS: Lithography, Photoresist processing, Photomasks, Optical proximity correction, Lithographic illumination, Resolution enhancement technologies, Electroluminescence, Image processing, Etching, Semiconducting wafers

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Proceedings Article | 12 June 2003 Paper

Simulation of complex resist pattern collapse with mechanical modeling

Hyung-Joo Lee, Jun-Taek Park, Yeong-Keun Kwon, Hye-Keun Oh

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485048

KEYWORDS: Liquids, Calibration, Interfaces, Solids, Analytical research, Chemical analysis, Optical lithography, Critical dimension metrology, Lithography, Adhesives

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Proceedings Article | 12 June 2003 Paper

Extraction of exposure parameters by using neural networks

Kyoung-Ah Jeon, Hyoung-Hee Kim, Ji-Yong Yoo, Jun-Taek Park, Hye-Keun Oh

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485050

KEYWORDS: Neural networks, Absorption, Evolutionary algorithms, Refraction, Optical lithography, Photoresist materials, Neurons, Associative arrays, Refractive index, Photoresist processing

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Proceedings Article | 30 July 2002 Paper

CD prediction by threshold energy resist model (TERM)

Ji-Yong Yoo, Yeong-Keun Kwon, Jun-Taek Park, Dong-Soo Sohn, Sang-Gon Kim, Young-Soo Sohn, Hye-Keun Oh

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474510

KEYWORDS: Image processing, Photoresist processing, Optical lithography, Photomasks, Critical dimension metrology, Instrument modeling, Single crystal X-ray diffraction, Lithography, Cadmium, Process modeling

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