We propose novel inactivation technologies which improve resolution. Base generators have been developed, which
inactivate acid by thermal treatment or exposure. This thermal inactivation technology realizes simple
litho-inactivation-litho-etch (LILE) process with good fidelity. After 1st patterning, acid is inactivated by amine released
from the thermal base generator under low temperature baking of less than 150°C. Just adding one simple low
temperature bake process, LILE has two advantages; i) keeping high throughput, and ii) avoidance of pattern
deformation. 32nm line and space (l&s) pattern is successfully delineated. The inactivation technology has been
expanded to frequency doubling patterning. Photo base generator (PBG) is used to inactivate acid generated by exposure.
Acid concentration in both of low and high exposed area is precisely controlled by base generation efficiency of PBG.
The dual tone resist successfully delineates 32.5nm l&s pattern using 65nm l&s mask patterns with single exposure.
Resolution enhancement by novel image reversal (RENOIR) process and materials are studied for shrinkage of hole size
and pitch. The process approach is based on formation of pillar pattern and its conversion to hole pattern with wet
development (Fig.1). Fine pillar arrays were imaged by combination of high-resolution positive tone resist and X-Y
double line exposure with hyper NA immersion lithography. To achieve the reversal characteristics, we have developed
the novel resist material, which becomes of solvent insoluble and developer soluble after pillar patterning. The material
realizes the solubility switch just with hard bake treatment. Reversal film material is coated over the pillar patterns, and
subsequent development process converts pillars into hole patterns. 30nm size 96nm pitch hole was delineated with
150nm DoF and 10% exposure latitude by 1.2NA immersion exposure.
Silicon containing bi-layer resist systems for 193nm lithography have been developed for sub-100nm pattern fabrication. Lithographic characteristics of thin film top layer resist show the advantages of high resolution and wide process window. Thick under-layer covers substrate topography with minimum reflectivity and provides sufficient etch resistance for substrate etching. Alternating-copolymers have been employed as backbones of silicon containing resists polymers. Several kinds of functional silicon containing olefins have been synthesized and polymerized to form alternating copolymers. Structural properties of alternating copolymer and hydrophobicity of the silicon containing groups effectively reduced micro swelling in developer and minimized line edge roughness. Discrimination enhancement and acid diffusion control were investigated to achieve high resolution and small proximity pattern size bias. As a result, rectangular 100nm dense line patterns with small line edge roughness are delineated by the newly developed silicone containing resist, using 193nm scanner of NA value of 0.68 and COG-Mask. Characteristics of oxygen reactive ion etching resistance onto the new alternating polymers will be also discussed.
In order to establish surface imaging process using O2- RIE on ArF lithography, silicon containing bi-layer resists have been investigated. We synthesized cyclohexyl pendant silsesquioxane polymer to obtain high transparency at ArF wavelength. This polymer has ladder siloxane structure with high Si density (13 wt%), over 80%0.35 um transmittance at 193 nm, and has carboxylic acid partially protected by acid labile group for TMAH aq. development. Addition of base enhanced the slope of deprotecting reaction and suppressed acid diffusion. The function of specific amines as acid quencher was considered to cause `Proton-Jumping'. Substituting of carboxylic acid by alcohol type polar linkage increased alkali tolerance, adhesion force and polymer Tg. Standard 2.38wt% TMAH developer was applied and expanded the dissolution rate gap. For further improvement of the resolution, we increased alkali tolerance by introduction of tricyclodecanyl pendant and optimized alkali concentration of developer. As a result, suitable dissolution curve for surface imaging resists was realized and rectangular patterns were observed on bottom ARC.
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