Optical fiber communication technology, as a wired optical communication technology, has become a key technology to support modern network communication and carry the development of the Internet. Optical signals are affected by atmospheric attenuation and atmospheric turbulence in transmission, which can lead to light intensity flicker, beam drift and beam expansion, resulting in reduced reliability and stability of communication systems. Polarization code, as a new channel coding technology, has a clear and explicit coding structure, low decoding complexity and robust error correction performance; It can effectively suppress the influence of atmospheric turbulence without changing the transmitter and receiver structures, and effectively improve the performance of free-space optical communication systems. In this paper, we analyze the statistical characteristics of atmospheric turbulence effect in free-space optical communication, and study the polarization principle, coding construction and common decoding algorithms of polarization codes. On this basis, two common decoding algorithms of polarization codes with high BER and low delay as advantages are improved and optimized and applied to the study of free-space optical communication to improve the BER performance of free-space optical communication.
KEYWORDS: Semiconductor lasers, Telecommunications, Optical communications, Modulation, Information security, Eye, Demodulation, Signal to noise ratio, Signal processing, Signal detection
Chaotic signals can be applied to confidential communications because of their noise-like, broad-spectrum and unpredictable properties. However, using the internal parameters of the laser as the key for communication is not only not easy to change, but also the key parameter space is limited. Therefore, increasing the key space is crucial for the security of chaotic confidential communication systems. In this paper, we propose to increase the key space of chaotic optical communication system by using multi-section semiconductor laser (MSSL), which increases the number of key parameters and increases the key space of the system. Finally, the validity of the ideas proposed in this paper is verified through experiments.
With the increase of output power, more heat generation and higher operation current have become important issues, which affect the electrical-optical performance and reliability of high power semiconductor lasers. For the past several years, high power semiconductor laser chips utilizing double or triple quantum wells have been developed to achieve higher output power. However, the operation current of diode laser chips with double or triple quantum wells is much higher than that with single quantum well. Diode laser chips with double or triple quantum wells could only operate at a much lower duty cycle. In this paper, a compact quasi-continuous wave (QCW) high power semiconductor laser array based on dual-chip integration techniques has been developed. For this packaging structure, two diode laser bars were welded above and below a micro-channel heat sink, without significant increase in volume. By means of this integration method, the output power of the semiconductor laser could reach kilowatt-level at a lower operation current. The thermal behavior of the semiconductor laser array with different operation parameters was carried out using finite element method. The structure parameters of semiconductor laser array based on dual-chip integration were optimized and characterized. The output power is 1485 W operated at a current of 700 A and the maximum electro-optical efficiency is 75%, which is the record-high level for a high power semiconductor laser array.
Photoelectric tracking systems are widely used in the fields of reconnaissance, communication, and measurement. Due to different application scenarios, photoelectric tracking systems often face various interference problems such as complex backgrounds, similar targets, blurred camera motion, poor lighting, and strong mobility of moving targets, which have become a huge challenge for photoelectric detection systems. In order to improve the performance of the optoelectronic tracking system as a whole, this paper studies the monitoring and tracking technology of the optoelectronic system based on the deep neural network. This paper proposes a diagonal network and peak response regularization technology for the task of photoelectric detection target detection. The diagonal network can effectively detect the data, and the peak response regularization method regularizes the eigenvalues in the deep neural network. Plug and play is combined with common target detection tasks, which can effectively improve the effect of target detection and tracking without increasing the amount of calculation. The validation results on public datasets and UAV datasets show that the related technologies have achieved good results in photoelectric detection and tracking tasks such as human pose detection and image classification.
The processing quality of optical communication devices will affect the performance of the equipment. Therefore, it is necessary to carry out strict inspection on optical communication devices, and they can only leave the factory after passing the test. Judging from the current detection methods, the detection of optical communication devices mainly adopts manual detection methods, resulting in low detection efficiency and subjective influence on the detection results. Aiming at the problems existing in the detection of optical communication devices, this paper studies the defect detection technology of optical communication devices based on machine vision. This paper analyzes the main inspection items and indicators of optical communication devices, the composition of the inspection system and the main module structure, studies different template pairing methods, and designs the corresponding defect detection algorithm according to the imaging characteristics of components and bases on the product. The experimental results show that the components can be successfully matched under different conditions. The detection technology studied in this paper has a low rate of missed detection and false detection and has good defect detection stability and accuracy.
Photodetectors can capture optical signals and convert them into electrical signals. As an important optoelectronic device, it has important application value in imaging, optical communication, security inspection, environmental monitoring and other fields. Silicon-based photonic integrated chips have unique advantages and play an important role in optical communication. Fabrication of high-performance detector arrays is the current research hotspot and frontier direction. Driven by high-speed communications such as big data, cloud computing, and 5G communication networks, the transmission rate and carrying capacity of data information continue to climb to super-large capacity and high-speed. Data transmission is upgraded to larger bandwidth and faster rate, and electrical interconnection is difficult to meet the demand for high-speed data transmission. In this paper, different kinds of high-performance photodetectors are analyzed, and the performance characteristics of several typical high-performance photodetectors are studied. Optical communication technology has the advantages of abundant spectrum resources, high security, and strong anti-electromagnetic interference ability. It can carry long-distance, large-capacity and high-speed data communication, and has become an important development direction in data center interconnection solutions. Data center is an important carrier for processing and computing Internet applications. This paper studies the application of high-performance photodetectors in visible light communication technology in combination with data center communication scenarios.
Semiconductor UV photodetectors are widely used in civil, military and commercial applications. It has attracted great research interest in recent years. Due to its excellent optical and electrical properties, ZnO has broad application prospects in the field of ultraviolet photodetectors. The optoelectronic properties of single materials are often limited, and composite structures can improve the shortcomings of single materials. In this paper, ZnS materials were composited on ZnO by vacuum vulcanization. The photoelectric properties of PECC UV photodetectors with ZnS/ZnO composite structure as photoanode were also analyzed. The results show that the open-circuit voltage VOC of the UV photodetector with this structure is 0.6 V, the short-circuit current ISC is 5.63 μA, the sensitivity is 401, which is much higher than that of the pure ZnO nanorod array of 119.7, and the responsivity is also increased from 2.81 A/ W increased to 9.38 A/W. The increase in the photoresponse current is attributed to the type II heterostructure formed by the composite, while the slower photoresponse is because the electronic effective mass of the composite structure is larger than that of ZnO with oxygen vacancy defects.
Quantum dot materials are widely used in infrared photodetectors, solar cells, optical fiber communication and other fields due to their unique advantages. These devices cause the gaps between quantum dots to be occupied by short-chain organic ligands, which limit the transport of charge carriers between quantum dots, and often exhibit lower response and poorer performance. In order to solve these problems, this paper starts from the preparation of lead sulfide quantum dot field effect devices, uses different ligands to modify the surface of lead sulfide quantum dots, and studies the influence of different ligands on the electrical properties of lead sulfide quantum dots. Combining plasmonic nanostructures with semiconductors is a reliable way to improve the performance of various optoelectronic devices. On this basis, this paper studies high-performance photodetectors with different structures from the design point of view, using double-layer structures to improve the structure of infrared photodetectors. The responsivity, specific detection rate, photosensitivity and other properties of infrared photodetection devices based on lead sulfide quantum dots are improved, which has certain theoretical significance for the construction of new nanoelectronics and optoelectronic devices.
KEYWORDS: Control systems, Signal detection, Field programmable gate arrays, Signal processing, Electrons, Electronic circuits, Digital signal processing, Computing systems, Spectrometers, Control systems design
The light sensor chip generates different signals through different lighting, and is widely used in light sensors, digital cameras, etc. Therefore, it is very important to test the developed photosensitive chip. In the process of photoelectric detection, light signals of different intensities are faced, and the intensities of these light signals may vary greatly in magnitude over time. In this case, it requires our photoelectric detection system to have the characteristics of high sensitivity and fast response speed; the photoelectric detection system should also have high-precision gain changing ability, so that the optical signal acquisition can be better presented. Aiming at the above problems of photoelectric detection, this paper deeply studies the method of gain adjustment of photoelectric detection system, and designs and realizes the gain control system of photoelectric detection system based on FPGA. The experimental results show that the photoelectric detection gain control system can stably and accurately adjust the gain of the multi-channel photoelectric detection system, and can help the photoelectric detection system to detect plasma signals with different amplitudes and large magnitude gaps.
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