Mr. Karl Schumacher Profile

Karl Schumacher

at GLOBALFOUNDRIES Dresden Module One LLC & Co KG

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Publications (5)

Proceedings Article | 20 October 2016 Paper

Smart mask ship to control for enhanced on wafer CD performance

Clemens Utzny, Karl Schumacher, Rolf Seltmann

Proceedings Volume 10032, 100320I (2016) https://doi.org/10.1117/12.2248889

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Manufacturing, Scanning electron microscopy, Error analysis, Semiconductors, Process control, Lithography, Control systems

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Proceedings Article | 24 March 2006 Paper

Overlay improvement by nonlinear error correction and nonlinear error control by APC

Dongsub Choi, Andreas Jahnke, Karl Schumacher, Max Hoepfl

Proceedings Volume 6152, 61523W (2006) https://doi.org/10.1117/12.655157

KEYWORDS: Semiconducting wafers, Overlay metrology, Optical alignment, Error analysis, Lithography, Nonlinear control, Error control coding, Tolerancing, Neodymium, Semiconductors

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Proceedings Article | 12 May 2005 Paper

The challenge of high-volume 193-nm semiconductor manufacturing

U. Schroder, S. Poelders, T. Fischer, K. Schumacher, A. Kiss, A. Frangen, D. Nees, M. Kubis, G. Erley, B. Janke

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.594628

KEYWORDS: 193nm lithography, Semiconducting wafers, Photoresist materials, Etching, Photomasks, Lithography, Manufacturing, Semiconductor manufacturing, Metrology, Deep ultraviolet

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Proceedings Article | 28 May 2004 Paper

Matching OPC and masks on 300-mm lithography tools utilizing variable illumination settings

Katrin Palitzsch, Michael Kubis, Uwe Schroeder, Karl Schumacher, Andreas Frangen

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.532328

KEYWORDS: Photomasks, Critical dimension metrology, Lithography, Optical proximity correction, Lithographic illumination, Semiconducting wafers, Etching, Reticles, Scanners, Monochromatic aberrations

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CD control is crucial to maximize product yields on 300mm wafers. This is particularly true for DRAM frontend lithography layers, like gate level, and deep trench (capacitor) level. In the DRAM process, large areas of the chip are taken up by array structures, which are difficult to structure due to aggressive pitch requirements. Consequently, the lithography process is centered such that the array structures are printed on target. Optical proximity correction is applied to print gate level structures in the periphery circuitry on target. Only slight differences of the different Zernike terms can cause rather large variations of the proximity curves, resulting in a difference of isolated and semi-isolated lines printed on different tools. If the deviations are too large, tool specific OPC is needed. The same is true for deep trench level, where the length to width ratio of elongated contact-like structures is an important parameter to adjust the electrical properties of the chip. Again, masks with specific biases for tools with different Zernikes are needed to optimize product yield. Additionally, mask making contributes to the CD variation of the process. Theoretically, the CD deviation caused by an off-centered mask process can easily eat up the majority of the CD budget of a lithography process. In practice, masks are very often distributed intelligently among production tools, such that lens and mask effects cancel each other. However, only dose adjusting and mask allocation may still result in a high CD variation with large systematical contributions. By adjusting the illumination settings, we have successfully implemented a method to reduce CD variation on our advanced processes. Especially inner and outer sigma for annular illumination, and the numerical aperture, can be optimized to match mask and stepper properties. This process will be shown to overcome slight lens and mask differences effectively. The effects on lithography process windows have to be considered, nonetheless.

Proceedings Article | 16 July 2002 Paper

Advances in process overlay on 300-mm wafers

Jens Staecker, Stefanie Arendt, Karl Schumacher, Evert Mos, Richard van Haren, Maurits van der Schaar, Remi Edart, Wolfgang Demmerle, Hoite Tolsma

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473421

KEYWORDS: Semiconducting wafers, Optical alignment, Metrology, Overlay metrology, Photoresist processing, Oxides, Diffraction, Polishing, Image processing, Sensors

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Overlay budgets are getting tighter within 300 mm volume production and as a consequence the process effects on alignment and off-line metrology becomes more important. In a short loop experiment, with cleared reference marks in each image field, the isolated effect of processing was measured with a sub-nanometer accuracy. The examined processes are Shallow Trench Isolation (STI), Tungsten-Chemical Mechanical Processing (W-CMP) and resist spinning. The alignment measurements were done on an ASML TWINSCANT scanner and the off-line metrology measurements on a KLA Tencor. Mark type and mark position dependency of the process effects are analyzed. The mean plus 3 (sigma) of the maximum overlay after correcting batch average wafer parameters is used as an overlay performance indicator (OPI). 3 (sigma) residuals to the wafer-model are used as an indicator of the noise that is added by the process. The results are in agreement with existing knowledge of process effects on 200 mm wafers. The W-CMP process introduces an additional wafer rotation and scaling that is similar for alignment marks and metrology targets. The effects depend on the mark type; in general they get less severe for higher spatial frequencies. For a 7th order alignment mark, the OPI measured about 12 nm and the added noise about 12 nm. For the examined metrology targets the OPI is about 20 nm with an added noise of about 90 nm. Two different types of alignment marks were tested in the STI process, i.e., zero layer marks and marks that were exposed together with the STI product. The overlay contribution due to processing on both types of alignment marks is very low (smaller than 5 nm OPI) and independent on mark type. Some flyers are observed fot the zero layer marks. The flyers can be explained by the residues of oxide and nitride that is left behind in the spaces of the alignment marks. Resist spinning is examined on single layer resist and resist with an organic Bottom Anti-Reflective Coating (BARC) underneath. Single layer resist showed scaling on unsegmented marks that disappears using higher diffraction orders and/or mark segmentation. Resist with a planarizing BARC caused additional effects on the wafer edge for measurements with the red laser signal. The effects disappear using the green laser of ATHENAT.

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