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Kexin Li
at NYU Tandon School of Engineering
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Publications (1)
Proceedings Article | 16 February 2017 Presentation + Paper
Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density
Kexin Li, Shaloo Rakheja
Proceedings Volume 10104, 1010418 (2017) https://doi.org/10.1117/12.2251582
KEYWORDS: Gallium nitride, Field effect transistors, Heterojunctions, Transistors, Instrument modeling, Indium nitride, TCAD, Device simulation, Advanced distributed simulations, Optimization (mathematics), Gallium, Capacitance, Aluminum, Data modeling, Polarization
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