The ultrafast carrier dynamics in InGaN multiple quantum well (MQW) laser diodes were investigated using a time-resolved bias-lead monitoring techniques. Both pump and probe beams were from the second harmonic generation (SHG) of a tunable 100-fs Ti:Sapphire modelocked laser. From the optical selection rules of TE and TM polarized lights, one can selectively excite and probe different valance subbands to conduction band transitions in the MQW structure with different polarized pump and probe light. Using this technique, ultrafast inter-subband hole relaxation processes were found to dominate the observed carrier dynamics.
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