Ms. Kyoko Kuroki Profile

Kyoko Kuroki

at Toppan Technical Research Institute

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Proceedings Article | 26 August 2024 Paper

Evaluation and countermeasures verification of haze on ArF PSM

Kyoko Kuroki, Kazuaki Matsui, Yosuke Kojima

Proceedings Volume 13177, 131770I (2024) https://doi.org/10.1117/12.3034876

KEYWORDS: Photomasks, Molybdenum, Phase shifts, Lithography

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Haze is a defect such as particle that is generated on the photomask during exposure, consequently reducing the lifetime of the photomask. Therefore, various investigation has been done to clarify the root causes of haze, and countermeasures have been taken according to the causes. However, in recent years, it has been discovered that there is a new mode of haze caused by the photomask material itself. The molybdenum, derived from MoSi phase shift films, was generated as particles such as molybdenum oxide and ammonium molybdate during ArF exposure. In this paper, the results of the verification evaluation of the hypothetical cause of molybdenum haze and countermeasures are reported. Based on the hypothesis that the cause of molybdenum haze may be molybdenum ion residue dissolved in the photomask cleaning solution, as a result of verification evaluation using an Accelerated irradiation Test Bed (ATB), a large amount of haze occurred on the quartz part of the photomask, so the hypothesis was likely to be correct. Therefore, a phase shift film with a protection layer was devised to prevent the MoSi film from being exposed to the cleaning solution. The photomasks made of this new phase shift film had more than four times the haze resistance of the conventional photomasks and had less CD change after irradiation. In addition, the processability and lithography performance of the new structure photomask were the same as that of the conventional photomask, and it was confirmed that they were a promising photomask.

Proceedings Article | 11 May 2007 Paper

Influence of environmental components on haze growth

Joseph Gordon, David Chan, Larry Frisa, Colleen Weins, Christian Chovino, John Keagy, Steve Mahoney, Frank Chen, Makoto Kozuma, Kyoko Kuroki, Takahiro Matsuura

Proceedings Volume 6607, 660707 (2007) https://doi.org/10.1117/12.728920

KEYWORDS: Air contamination, Photomasks, Reticles, Pellicles, Atmospheric particles, Sulfur, Gases, Nitrogen, Semiconducting wafers, Semiconductors

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With the use of 193nm lithography, haze growth has increasingly become a critical issue for photomask suppliers and wafer fabs. Recent photomask industry surveys indicate the occurrence rate of haze is 10 times higher on 193nm masks compared to 248nm masks. Additionally, work has been presented that shows strong relationship between environmental conditions around the photomask and the occurrence of haze at 193nm. This underscores the need to better understand the basic mechanisms of haze and the measures such as environmental airborne molecular contamination (AMC) control which can be employed to reduce the occurrence of haze in use. A custom excimer laser test system capable of 193nm and 248nm wavelengths was built to accelerate haze growth and to better understand haze formation mechanisms. Work on materials impact on haze growth, such as pellicles and reticle compacts, as well as preliminary findings on environmental impacts have been presented previously. Results indicate even on pristine surfaces haze can grow when contaminants are present in the storage and use environment. The test system has been upgraded to include tight control on the concentration of specific airborne contaminants of concern. The impact of these contaminants and their relative concentrations will be examined in this paper and are presented to aid the industry in determining the level of environmental control needed over the life of a reticle.

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