As one of the primary products in the field of semiconductor lasers, GaAs-based semiconductor laser devices with an 808nm wavelength are widely applied in various industries such as industrial, medical, and scientific research. These devices possess substantial market potential. This paper reports on the development of a high-power array semiconductor laser device emitting at 808nm wavelength, achieved by our research team. At a temperature of 25°C, with a filling factor of 30% and an injection current of 50A, the maximum output power reaches 55.31W, and the photoelectric conversion efficiency is 58.74%. This device demonstrates exceptional emission performance.
The whispering gallery mode resonator based on a fluoride crystalline material offers the advantage of an ultrahigh quality factor, however, its fast tuning remains a challenge. We propose a tuning method for a CaF2 crystalline resonator using external pressure loading. Through our theoretical calculations and simulations, we discovered that the frequency shift induced by deformation during the pressure tuning of the crystalline resonator is greater than that induced by changes in refractive index. Both shifts were of the same order of magnitude, indicating that both factors must be considered. The experimental results show tuning rates of 1114.6 and 888.2 MHz/MPa in the transverse electric and transverse magnetic modes, respectively. The tuning system can respond to a signal frequency of up to 1.2 MHz.
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