Transmission properties of transverse magnetic light through periodic sub-wavelength slit apertures on a metallic film, behind which is another planar metallic film, are studied by finite-difference-time-domain method with constant periodicity and slit width. The result shows that the transmitted energy is strongly correlated to both the thickness of the metallic grating and the distance between such two films at a specific wavelength. The thickness of the grating acts as a filter that allows specific wavelengths to go through the slits, while the distance of dual metallic film dominantly determines a constructive or destructive interference between the transmitted light through the slits and the reflected wave from the back film. Besides, a strong vibration in the transmission spectrum as a function of the grating thickness is interestingly observed, which can be interpreted by the resonance of the surface plasmons of the front and the back metallic films.
Impact ionization in charge layer and multiplication layer of InAlAs/InGaAs avalanche photodiodes (APDs) with separated absorption, grading, charge and multiplication structures has been studied by two-dimensional simulations using Silvaco TCAD. Special attention has been paid to the charge layer and multiplication layer with different thicknesses and doping concentrations in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Band-edge profile calculations as well as current–voltage characteristic and electric field results of the APDs will be discussed in this article.
A hybrid integrated photodetector consisting of array of reach-through avalanche photodiodes and readout integrated circuit chips was developed. The reach-through avalanche photodiode model with separate layer of absorption, charge and multiplication are elaborated. This kind of photodiode is optimized for detection of 905 nm radiation and in that range achieve excellent parameters – high gain, low noise and high speed. Next, the design and properties of the readout integrated circuit with a new-type regulated cascode circuit configuration are discussed. The linear array reach-through avalanche photodiode and readout integrated circuit chips were integrated into a photodetector by using bonder-leading welding techniques. The integrated detector demonstrates the pulse responsivity R ≥ 1×106 V/W, the noise equivalent power NEP ≤ 5 pW/Hz1/2, and the rise time tr ≤ 3 ns, under pulsed laser irradiation at 905 nm, 100 ns and 10 KHz.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.