A tunable Mach-Zehnder wavelength duplexer has been realized based on P-i-n-N InGaAsP/InP. It has been
made polarization insensitive by proper wafer layer stack and proper waveguide geometry. The layer stack for
the duplexer was tested first with a waveguide phase shifter, which resulted in up to 36°/(V•mm) phase shifting
efficiency for TE polarization, which is slightly more efficient than the most efficient phase shifter reported to
date in bulk InP at 1.55 μm, and with much lower transmission loss[1]. The transmission loss was measured to
be 4 dB/cm (5 dB/cm) for TE (TM) polarized light, for 2 μm wide shallowly etched waveguides, which is rather
low compared to other reported high efficiency phase shifters for this material system. With this layerstack, we
designed a Mach-Zehnder (MZ) duplexer with narrow, 1.5 μm wide, deeply etched phase shifters that meet the
polarization insensitivity requirement. The measurement results showed that the phase shifting efficiency of this
narrow and deeply etched duplexer is up to 34°/(V•mm) for both TE and TM polarization, and the transmission
loss of this 1.5 μm wide waveguide is about 10 dB/cm for both TE and TM polarization. This is also the first
reported deeply etched narrow phase shifter with high phase shifting efficiency and relatively low loss.
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