Mr. Marco Höppner Profile

Marco Höppner

at TU Dresden

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Proceedings Article | 18 September 2018 Presentation

Investigations on electrical performance and contact resistance in solution-processed vertical organic field-effect transistors (Conference Presentation)

David Kneppe, Marco Höppner, Hans Kleemann, Karl Leo

Proceedings Volume 10739, 107390F (2018) https://doi.org/10.1117/12.2321012

KEYWORDS: Resistance, Transistors, Semiconductors, Flexible circuits, Electronic circuits, Switching, Molecules, Vacuum deposition, Organic semiconductors, Modulation

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High performance transistors are indispensable building blocks for future flexible electronic circuits. In order to overcome performance limitations such as low switching speed and high driving voltage, it is necessary to shorten the channel length and use high mobility semiconductors. Vertical organic field-effect transistors (VOFET) may overcome these limitations since their channel length can be reduced to a few nanometer without being restricted by photolitographic resolution limits. Previously reported VOFETs consist of small molecules from vacuum deposition. However, these semiconductors do not show as high mobilities as achieved with new semiconductors deposited from solution and are less suited for low-cost applications because of cost considerations. Here, we present our investigations on the electrical performance of solution-processed VOFETs with the polycrystalline organic semiconductor 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) which shows mobilities up to 2 cm²/Vs. One major problem hindering the VOFET performance is contact resistance due to non-ohmic source/drain contacts as well as a non-linear channel resistance. Thus, we discuss the VOFET performance with regard to both kinds of resistances and reveal that the gate voltage induced modulation of contact resistance governs the IV curve for these VOFETs. The findings are supported by device simulations helping to create an improved understanding of the electric field and charge carrier distribution. We also demonstrate our results on channel resistance and compare experimental results with theoretical simulations proving that substantial improvements regarding contact resistance need to be made in order to obtain higher cutoff frequencies in organic transistors.

Proceedings Article | 18 September 2018 Presentation

Vapor-deposited vertical organic field-effect transistors with optimized geometry for unrivaled transition frequencies (Conference Presentation)

Marco Höppner, David Kneppe, Hans Kleemann, Karl Leo

Proceedings Volume 10739, 107390S (2018) https://doi.org/10.1117/12.2320990

KEYWORDS: Transistors, Field effect transistors, Organic semiconductors, Semiconductors, Consumer electronics, Switching, Optical lithography, Doping

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Future flexible consumer electronic devices require powerful organic field-effect transistors (OFETs) to fulfill the demanding performance targets for, e.g., flexible RFID tags or active-matrix display driving. To achieve the required switching speed and current density (e.g. for display driving), it is firstly important to improve the charge carrier mobility of the organic semiconductors but secondly, it is also essential to reduce the channel length. In this context, optimizing the geometry of OFETs led to the development of novel approachs for vertical organic field-effect transistors (VOFETs) [1] where the vertical channel can be scaled down to the range of <50 nm. Here we present VOFETs produced by a new, highly reliable integration process which allows to push the cutoff frequency, a main figure of merit, to new limits. In particular, geometrical aspects of the VOFET such as gate-source overlap and charge carrier injection/ extraction length are investigated to derive scaling laws allowing to predict dynamic device properties. Furthermore, we present an advanced patterning technique helping to maximize on/off ratio and leakage current. These improvements on device performance allow for alternating current operation above 10 MHz. Moreover, to evaluate the role of the organic semiconductor in these highly contacted limited devices, we investigate how semiconductor properties such as HOMO-LUMO gap, intrinsic doping, and mobility affect the VOFET performance and in particular device stability. Combining these finding on the device scaling and the influence of the semiconductor properties, we can provide a roadmap for future device improvement strategies.

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