KEYWORDS: Hot carriers, Nanowires, Solar cells, Semiconductors, Photovoltaics, Diseases and disorders, Crystals, Beam diameter, Time resolved spectroscopy, Spectroscopes
III-V nanowire structures have shown promising results in mitigating hot carrier thermalization rates suitable for hot carrier solar cell applications. This effect is attributed to the spatial confinement of charged particles and the adjustment of material properties in these nanostructures. Furthermore, by designing vertically standing nanowires, it is possible to improve photo-absorption by increasing internal surface reflection. Investigating the properties of hot carriers in core-shell InGaAs nanowires has shown evidence for a strong diameter dependence of these nanostructures. Determining the origin of this effect provides valuable information for the development of efficient hot carrier absorbers for 3rd generation solar cells.
We show by numerical modelling how geometrical parameters of a NW and Si-WG design influence the spontaneous emission enhancement of the QD emitter and the in-coupling efficiencies at the NW-WG interface. First experiments towards the development of an integrated III-V NW-QD system are then presented. Here, we demonstrate a droplet-free site-selective epitaxy of vertical-cavity NW waveguides, where good control of GaAsSb/InGaAs axial heterostructures and their distinct luminescence properties are demonstrated. We also discuss control of Indium incorporation into the InGaAs axial segment, to tune the emission wavelength before optimizing the axial size, progressing towards an axial QD.
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