Reticle critical dimension uniformity (CDU) is one of the major sources of wafer CD variations which include both
inter-field variations and intra-field variations. Generally, wafer critical dimension (CD) measurement sample size interfield
is much less than intra-field. Intra-field CDU correction requires time-consumption of metrology. In order to
improve wafer intra-field CDU, several methods can be applied such as intra-field dose correction to improve wafer
intra-field CDU. Corrections can be based on CD(SEM) or aerial image metrology data from the reticle. Reticle CDU
and wafer CDU maps are based on scanning electron microscope (SEM) metrology, while reticle inspection intensity
mapping (NuFLare 6000) and wafer level critical dimension (WLCD) utilize aerial images or optical techniques. Reticle
inspecton tools such as those from KLA and NuFlare, offer the ability to collect optical measurement data to produce an
optical CDU map. WLCD of Zeiss has the advantage of using the same illumination condition as the scanner to measure
the aerial images or optical CD.
In this study, the intra-field wafer CDU map correlation between SEMs and aerial images are characterized. The layout
of metrology structures is very important for the correlation between wafer intra-field CDU, measured by SEM, and the
CDU determined by aerial images. The selection of metrology structures effects on the correlation to SEM CD to wafer
is also demonstrated. Both reticle CDU, intensity CDU and WLCD are candidates for intra-field wafer CDU
characterization and the advantages and limitations of each approach are discussed.
Recently, the design of integrated circuits has become more and more complicated due to higher circuit densities. In particular for logic applications, the design is no longer uniform but combines different kinds of circuits into one mask layout resulting in stringent criteria for both wafer and photomask manufacturing. Photomask CD uniformity control and defectivity are two key criteria in manufacturing today’s high-end reticles, and they are both strongly impacted by the mask developing process.
A new photomask develop tool (ACT-M) designed by Tokyo Electron Limited (TEL) has been installed at the Advanced Mask Technology Center (AMTC) in Dresden, Germany. This ACT-M develop tool is equipped with a standard NLD nozzle as well as an SH nozzle which are both widely used in wafer developing applications. The AMTC and TEL used the ACT-M develop tool to adapt wafer puddle develop technology to photomask manufacturing, in an attempt to capture the same optimum CD control enjoyed by the wafer industry. In this study we used the ACT-M develop tool to examine CD uniformity, local loading and defect control on P-CAR and N-CAR photomasks exposed with 50keV e-beam pattern generators. Results with both nozzle types are reported. CD uniformity, loading, and defectivity results were sufficient to meet 65-nm technology node requirements with these nozzles and tailored made develop recipes for photomask processing.
An increasingly tighter set of mask specifications requires new equipment, process improvements, and improved e-beam resist materials. Resist profiles, footing behavior and line edge roughness (LER) have strong impacts on CD-uniformity, process bias and defect control. Additionally, the CD stability of e-beam resists in vacuum contributes to the final CD-uniformity as a systematic error. The resolution capability of the resist process is becoming increasingly important for slot contact like features, which are expected to be applied as clear assist features in contact hole layers at the sub 100nm technology node (1x)1. Three e-beam sensitive pCAR resists from different vendors were investigated in terms of resolution and pattern quality, PED stability, PEB sensitivity, dose latitude, CD-uniformity and line edge roughness. As reported here, all three pCARs showed improvements in all of these areas. Future work with these pCAR resists will focus on defect density, PCD, and CD uniformity.
A new photomask develop tool designed by Tokyo Electron Limited (TEL) with wafer puddle technology was evaluated at the Advanced Mask Technology Center (AMTC) in Dresden, Germany. Parameters selected for this evaluation were resist dark loss uniformity, critical dimension (CD) uniformity, loading, linearity, resist cross sectional images, and defects using chemically amplified resists (CARs) exposed with DUV (l=257nm) and 50KeV e-beam pattern generators. Implementing wafer puddle technology to photomask developing was not a simple, straightforward process. Standard CAR puddle recipes for wafer developing were inadequate to match CDU requirements for photomasks at the 130nm technology node using DUV exposure. While the results were disappointing, the TEL alpha develop tool cannot be held entirely responsible. Other, non-develop tool related factors such as resist, substrate, coating bake temperature and time, lithography tool, and post exposure bake temperature and time, all contributed to the final post develop results. Indeed, other CAR/substrate combinations exposed at 50keV e-beam and processed on the TEL alpha develop tool were markedly better in CD performance when compared to DUV results. The AMTC has recently taken delivery of a full scale, production worthy, TEL photomask develop tool for use at future technology nodes.
The challenges, mask manufacturing is faced with, are more and more dominating the semiconductor industry as the pattern sizes shrink. Today's mask patterns have reached sizes that are common in wafer manufacturing. Looking into the industry, we can see that some of the quality parameters - such as CD uniformity and defect control - are managed better in wafer than in mask manufacturing. Consequently, mask manufacturers have started to apply more wafer processing techniques to mask processes. Among others, develop process has a great impact on the quality of the mask manufacturing. This contribution describes how Tokyo Electron Limited (TEL) scanning (linear drive nozzle) developer processing (widely used in advanced wafer manufacturing) was adapted for mask development. Out of this technology transfer, a new alpha-type mask develop tool was launched at TEL and an evaluation of this tool was carried out at the Advanced Mask Technology Center (AMTC), Dresden, Germany. Target of this collaboration was to successfully transfer wafer processing technology to mask making. By this, valuable information was generated, that has been implemented into the production platform, which is commercialized since first half of 2004.
With shrinking feature sizes there is a growing demand for improved uniformity values and defect levels especially for aqueous develop during photomask processing. Standard nozzle systems with discrete dispense channels for applying the developer medium onto the photomask surface may cause non-uniformities. This results in characteristic imprints in CD-uniformity reflecting the nozzle design used during the develop process step. These can lead on the one hand to an increased number and various types of defects and on the other hand to variations in CD-uniformity. A new puddle nozzle design for the STEAG HamaTech's ASP5500 has been developed to address this issue. Instead of discrete dispense holes the developer medium is applied onto the substrate surface by a full-width film. This media film is applied uniform across the substrate and has low impact onto the photomask surface. By combining the new nozzle design with gas-less high volume dispense pumps a very uniform and defect-free dispense can be achieved. The uniformity and defect performance of the new film nozzle will be presented and compared to a standard dispense nozzle system. The study has been done on masks with Chemically Amplified Resist (CAR).
Negative-tone chemically amplified resists MES-EN1G (JSR), FEN-270 (Fujifilm ARCH), EN-024M (TOK) and NEB-22 (Sumitomo) were evaluated for binary mask making. The investigations were performed on an advanced tool set comprising a 50kV e-beam writer Leica SB350, a Steag Hamatech hot/cool plate module APB5000, a Steag Hamatech developer ASP5000, an UNAXIS MASK ETCHER III and a SEM LEO1560 with integrated CD measurement option. We investigated and compared the evaluated resists in terms of resolution, e-beam sensitivity, resist profile, post exposure bake sensitivity, CD-uniformity, line edge roughness, pattern fidelity and etch resistance. Furthermore, the influence of post coating delay and post exposure delay in vacuum and air was determined.
In this contribution we will demonstrate how the use of negative tone CAR can significantly improve the CD control of mask layers in which CD is measured on opaque features. A thorough investigation of the individual contributions of sequential process steps in mask making revealed that the final CD uniformity can by improved by 20% when a negative tone resist is used. In case of 50 keV electron beam (EB) mask writing systems, that employ variable shaped beam (VSB) writing, the writing time can be reduced by 40-50 % when a chemically amplified resist (CAR) is applied. Therefore we have evaluated and characterized a commercially available negative-tone CAR. The resist showed good pattern performance down to 150 nm for isolated and semi-isolated opaque lines thus having the ability to form assist bar features. Vertical profiles have been obtained. Line edge roughness (LER) is more pronounced for this material when compared to standard EB resist ZEP 7000. But analysis of CD uniformity (3σ) of 500 nm opaque lines in local area with negative CAR and with positive tone ZEP 7000 showed 4,8 nm and 6,2 nm, respectively. Thus substantiating that the negative CAR is advantageous in terms of opaque line CD control. Regarding soft bake (SB) and post exposure bake (PEB) latitude, the CAR is stable with respect to soft bake temperature variation (3,7 nm/°C). Much more severe is the steep PEB latitude with respect to dose of 0,7-1,3 (μC/cm2)/°C. This requires the use of high precision baking tools for the PEB step. Since all mask blanks have been coated in-house, we have investigated a variety of pre-treatment steps. The influence of each step was characterized by contact angle measurement. We found out that the best results have been achieved when the sequence H2SO4/H2O2-cleaning-UV/ozone-clean-dehydration bake is applied to virgin blanks as delivered by the blank supplier.
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