Flunctuation microscopy is a hybrid diffraction-imaging technique that yields information about higher-order correlations between structural units in materials. It has been shown to be well suited for detecting medium rangeorder in atomic positions in amorphous materials. This article presents a review of flunctuation microscopy as employed in a transmission electron microscope for the study of amorphous tetrahedral semiconductors. Possible extensions of the technique to other radiations such as x-rays, and for other structurally noisy materials such as polymers and starches, are discussed.
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