Prof. Michal Bockowski Profile

Prof. Michal Bockowski

at Institute of High Pressure Physics PAS

SPIE Involvement:

Conference Program Committee | Author

Publications (52)

Proceedings Article | 9 March 2024 Presentation

Presentation

Effect of threading dislocations on the diffusion of implanted donors and acceptors in gallium nitride

Michal Bockowski, Kacper Sierakowski, Piotr Jaroszynski, Malgorzata Iwinska

Proceedings Volume PC12886, PC128860F (2024) https://doi.org/10.1117/12.3000147

KEYWORDS: Gallium nitride, Diffusion, Silicon, Magnesium, Transmission electron microscopy, Semiconductors, Scanning electron microscopy, P-type semiconductors, Finite element methods, Crystals

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Proceedings Article | 8 March 2024 Presentation + Paper

Presentation + Paper

Challenges and prospects of ammonothermal GaN crystal growth and substrate fabrication

K. Grabiańska, R. Kucharski, M. Boćkowski

Proceedings Volume 12886, 1288602 (2024) https://doi.org/10.1117/12.3000034

KEYWORDS: Gallium nitride, Fabrication, Crystals, Crystallization, Light emitting diodes, Electrical properties, Vapor phase epitaxy, Transistors, Sodium, Semiconductor lasers

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Proceedings Article | 21 March 2023 Presentation

Presentation

Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures

Shigefusa Chichibu, Kohei Shima, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Hideki Sakurai, Michal Bockowski, Jun Suda, Tetsu Kachi, Shinya Takashima, Ryo Tanaka, Katsunori Ueno, Masaharu Edo, Shoji Ishibashi, Akira Uedono

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646375

KEYWORDS: Gallium nitride, Luminescence, Ultraviolet radiation, Magnesium, Gallium, Doping, Annealing

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Proceedings Article | 21 March 2023 Presentation

Presentation

Recent progress in bulk GaN crystal growth technology

Malgorzata Iwinska, Tomasz Sochacki, Robert Kucharski, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649109

KEYWORDS: Gallium nitride, Crystals, Semiconducting wafers, Vapor phase epitaxy, Oxides

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Proceedings Article | 21 March 2023 Presentation

Presentation

Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences

Andrzej Taube, Oskar Sadowski, Iwona Sankowska, Karolina Pągowska, Marek Ekielski, Paweł Michałowski, Joanna Jankowska-Śliwińska, Jarosław Tarenko, Anna Szerling, Paweł Prystawko, Kacper Sierakowski, Piotr Jaroszyński, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648902

KEYWORDS: Gallium nitride, Annealing, Ions, Silicon, Diffusion, Magnesium, Ion implantation, Chemical species, X-ray diffraction, Surface roughness

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Proceedings Article | 21 March 2023 Presentation

Presentation

X-ray topography analysis of high perfection GaN substrates showing dynamic diffraction effects

Lutz Kirste, Thu Nhi Tran Thi Caliste, José Baruchel, Tomasz Sochacki, Robert Kucharski, Malgorzata Iwinska, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649878

KEYWORDS: X-rays, Gallium nitride, X-ray diffraction, Diffraction, Crystals, X-ray imaging, Synchrotrons, Synchrotron x-ray imaging, Image processing, Absorption

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Proceedings Article | 21 March 2023 Presentation

Presentation

Optimization of bevelled mesa fabrication process for vertical GaN p-n diodes

Jarosław Tarenko, Maciej Kamiński, Renata Kruszka, Magdalena Zadura, Andrzej Taube, Marek Ekielski, Joanna Jankowska-Śliwińska, Anna Szerling, Paweł Prystawko, Michał Boćkowski, Izabella Grzegory

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648891

KEYWORDS: Gallium nitride, Diodes, Photomasks, Photoresist materials, Photoresist developing, Etching, Semiconductors, Scanning electron microscopy, Reactive ion etching, Profilometers

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Proceedings Article | 21 March 2023 Presentation

Presentation

Ion implantation of acceptors into gallium nitride

Kacper Sierakowski, Rafal Jakiela, Tomasz Sochacki, Malgorzata Iwinska, Piotr Jaroszynski, Michal Fijalkowski, Marcin Turek, Michal Bockowski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2648256

KEYWORDS: Gallium nitride, Ion implantation, Crystals, Diffusion, Annealing, Zinc, Transistors, Optoelectronic devices, Mass spectrometry, Magnesium

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Proceedings Article | 15 March 2023 Presentation + Paper

Presentation + Paper

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi

Proceedings Volume 12421, 124210C (2023) https://doi.org/10.1117/12.2646233

KEYWORDS: Annealing, Gallium nitride, Magnesium, Gallium, Ions, Ion implantation, Silicon, Doppler effect, Solids, Chemical species

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Proceedings Article | 5 March 2022 Presentation

Presentation

Examination of silicon diffusion in GaN

Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, Michal Bockowski

Proceedings Volume PC12001, PC1200107 (2022) https://doi.org/10.1117/12.2607583

KEYWORDS: Silicon, Diffusion, Gallium nitride, Crystals, Atomic force microscopy, X-ray diffraction, Vapor phase epitaxy, Optical microscopy, Nitrogen, Mass spectrometry

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Proceedings Article | 5 March 2022 Presentation

Presentation

Carbon and manganese in semi-insulating bulk GaN crystals

Mikolaj Amilusik, Marcin Zajac, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Malgorzata Iwinska, Damian Wlodarczyk, Ajeesh Somakumar, Andrzej Suchocki, Michal Bockowski

Proceedings Volume PC12001, PC1200102 (2022) https://doi.org/10.1117/12.2607476

KEYWORDS: Crystals, Manganese, Carbon, Gallium nitride, Remote sensing, X-ray diffraction, Vapor phase epitaxy, Silicon, Raman spectroscopy, Oxygen

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Proceedings Article | 6 March 2021 Poster + Presentation

Poster + Presentation

Highly conductive ammonothermal GaN substrates with controlled concentration of gallium vacancies

Piotr Jaroszynski, Karolina Grabianska, Michal Fijalkowski, Mikolaj Amilusik, Marcin Zajac, Marcin Turek, Michal Bockowski

Proceedings Volume 11686, 116862E (2021) https://doi.org/10.1117/12.2577017

KEYWORDS: Gallium, Gallium nitride, Crystals, Ions, Annealing, Oxygen, Ion implantation, Hydrogen, Diffusion

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Proceedings Article | 5 March 2021 Presentation

Presentation

Investigation of Be diffusion coefficients for various crystallographic directions in GaN grown by HVPE

Michal Bockowski, Kacper Sierakowski, Rafal Jakiela, Marcin Turek, Piotr Jaroszyński, Paweł Kempisty, Michał Fijałkowski

Proceedings Volume 11686, 116861U (2021) https://doi.org/10.1117/12.2577013

KEYWORDS: Beryllium, Diffusion, Gallium nitride, Crystals, Polishing, Error analysis, Atomic force microscopy, Annealing, X-ray diffraction

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Proceedings Article | 5 March 2021 Presentation

Presentation

Recent progress in basic ammonothermal GaN crystal growth

Karolina Grabianska, Michal Bockowski, Boleslaw Lucznik, Robert Kucharski, Tomasz Sochacki

Proceedings Volume 11686, 116861K (2021) https://doi.org/10.1117/12.2577016

KEYWORDS: Gallium nitride, Crystals, Transistors, Vapor phase epitaxy, Sodium, Semiconductor lasers, Optoelectronic devices, High power lasers, Electronic components

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Proceedings Article | 5 March 2021 Presentation

Presentation

Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. Chichibu, T. Kachi

Proceedings Volume 11686, 116861P (2021) https://doi.org/10.1117/12.2575972

KEYWORDS: Gallium nitride, Annealing, Magnesium, Ion implantation, Doping, Spectroscopy, Ions, Nitrogen, Temperature metrology, Aluminum nitride

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Proceedings Article | 10 March 2020 Presentation

Presentation

Recent progress in bulk GaN growth (Conference Presentation)

Michal Bockowski, Boleslaw Lucznik, Mikolaj Amilusik, Michal Fijalkowski, Kacper Sierakowski, Slawomir Sakowski, Aneta Sidor, Malgorzata Iwinska, Robert Kucharski, Karolina Grabianska, Tomasz Sochacki

Proceedings Volume 11280, 1128004 (2020) https://doi.org/10.1117/12.2545062

KEYWORDS: Gallium nitride, Crystals, Doping, Manganese, Vapor phase epitaxy

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Proceedings Article | 13 March 2019 Presentation

Presentation

Implantation of beryllium into thin unintentionally doped layers of gallium nitride crystallized by halide vapor phase epitaxy (Conference Presentation)

Michal Bockowski, Michal Fijalkowski, Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Malgorzata Iwinska, Aneta Sidor, Grzegorz Kamler, Marek Oklej, Rafal Jakiela, Adam Barcz

Proceedings Volume 10918, 1091805 (2019) https://doi.org/10.1117/12.2507526

KEYWORDS: Gallium nitride, Crystals, Beryllium, Vapor phase epitaxy, Ion implantation, Electronic components, Transistors, Annealing, Nitrogen

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Proceedings Article | 13 March 2019 Presentation

Presentation

Recent progress of Mg-ion implantation and thermal activation process for p-doping in GaN (Conference Presentation)

Hideki Sakurai, Masato Omori, Shinji Yamada, Yukihiro Furukawa, Hideo Suzuki, Tetsuo Narita, Keita Kataoka, Michal Bockowski, Jun Suda, Tetsu Kachi

Proceedings Volume 10918, 109180V (2019) https://doi.org/10.1117/12.2508417

KEYWORDS: Gallium nitride, Annealing, Doping, Crystals, Lamps, Ion implantation, Nitrogen, Luminescence, Atomic force microscopy, Surface roughness

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Ion implantation (I/I) and annealing techniques to enable high carrier doping into selected regions are one of important research fields for realization of GaN power devices. However, particularly difficult research challenges are present in Mg-I/I into GaN as p-type doping technique. First problem is related to nitrogen vacancies (VN), crystal defects introduced by Mg-I/I . [1] Second issue is connected to degeneration of GaN surface by pyrolysis reaction during high-temperature annealing process. We examined Mg/N co-implantation into GaN as p-doping in order to compensate of VN defects. Research on ultra-high pressure thermal activation process to maintain equilibrium conditions at high temperature was conducted to avoid degradation of GaN surface. We prepared Mg/N co-implanted GaN-on-GaN samples with 300-nm-deep Mg-box-profile of 1E19 cm-3 and with N-box-profile of various concentrations in the range 0 ~ 1E20 cm-3. The samples were annealed without a protection cap layer at temperature between 1300 °C and 1480 °C under 1 GPa in N2 atmosphere. Samples capped with sputter-AlN were treated by conventional lamp annealing at 1300 °C for a comparison purpose. We obtained the dominant Green Luminescence (GL) emission at 2.3 eV and the recessive Donor Acceptor Pair (DAP) emission at 3.2 eV from a low-temperature cathodoluminescence (LT-CL) spectra in Mg-I/I samples without N co-implantation. This is in good agreement with results published before.[1][2] In addition to this, we found that the Mg/N co-implantation, for optimized N-ion dose, suppresses the GL intensity while maintaining the DAP intensity. Furthermore, in the ultra-high pressure thermal activation process, the DAP intensity markedly increases with anneal temperature and GL intensity suppression is also visible. These results strongly suggest that the origin of GL is related to VN, and the VN defect compensation occurs by N co-implantation. We also compare the AFM images of GaN surface roughness. The ultra-high pressure annealed surfaces were as smooth (RMS = 0.2~0.3 nm) as the as-implanted samples (0.3 nm), whereas surface treated with conventional lamp was rough (1.9 nm). We can, therefore, conclude that Mg/N co-implantation and ultra-high pressure thermal activation process allows activation of the Mg acceptor and recovery of p-GaN crystal quality. Such treatment results in VN defect compensation and a smooth surface of the annealed sample. This work was supported by MEXT “Program for research and development of next-generation semiconductor to realize energy-saving society.” [1] A. Uedono et al., Phys. Status Solidi B 252, No. 12 (2015) [2] K. Kojima et al., Appl. Phys. Express 10, 061002 (2017).

Proceedings Article | 13 March 2019 Presentation

Presentation

Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)

Michal Bockowski, Izabella Grzegory, Tomasz Sochacki, Boleslaw Lucznik, Michal Fijalkowski, Mikolaj Amilusik, Malgorzata Iwinska, Aneta Sidor, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Marcin Zajac

Proceedings Volume 10918, 1091804 (2019) https://doi.org/10.1117/12.2508154

KEYWORDS: Manganese, Iron, Magnesium, Gallium nitride, Doping, Crystals, Solids, Methane, Carbon, Temperature metrology

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Proceedings Article | 19 April 2018 Paper

Paper

Ammonothermal GaN substrates for microwave electronics and energoelectronics

R. Kucharski, M. Zając, K. Grabiańska, A. Gwardys-Bąk, A. Puchalski, Michal Boćkowski

Proceedings Volume 10715, 107150M (2018) https://doi.org/10.1117/12.2318038

KEYWORDS: Gallium nitride, Crystals, Transistors, Electronics, Diodes, Semiconductors, Microwave radiation, Electronic components

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Proceedings Article | 14 March 2018 Presentation

Presentation

Crystallization of AlGaN by HVPE method (Conference Presentation)

Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Boleslaw Lucznik

Proceedings Volume 10532, 1053206 (2018) https://doi.org/10.1117/12.2289135

KEYWORDS: Aluminum, Crystals, Epitaxy, Gallium, Nanostructures

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Proceedings Article | 14 March 2018 Presentation

Presentation

Crystallization of HVPE-GaN:Mn with metallic Mn as dopant source (Conference Presentation)

Michal Bockowski, Malgorzata Iwinska, Tomasz Sochacki, Mikolaj Amilusik, Michal Fijalkowski, Boleslaw Lucznik

Proceedings Volume 10532, 1053205 (2018) https://doi.org/10.1117/12.2289126

KEYWORDS: Manganese, Crystals, Gallium nitride, Doping, Temperature metrology, Gallium

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Proceedings Article | 19 April 2017 Presentation

Presentation

Semi-insulating HVPE-GaN grown on native seeds (Conference Presentation)

Michal Bockowski

Proceedings Volume 10104, 1010404 (2017) https://doi.org/10.1117/12.2250907

KEYWORDS: Crystals, Gallium nitride, Doping, Carbon, Iron, Vapor phase epitaxy, Quartz, Methane, X-ray diffraction, Raman spectroscopy

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Proceedings Article | 25 October 2016 Presentation + Paper

Presentation + Paper

Advances in AlGaInN laser diode technology for defence, security and sensing applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisnieski, R. Czernecki, G. Targowski

Proceedings Volume 9992, 99920C (2016) https://doi.org/10.1117/12.2240555

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Security technologies, Defense and security, Imaging systems, Gallium nitride, Quantum wells, Indium, Laser development, Crystals

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Proceedings Article | 13 May 2016 Paper

Paper

Free-space and underwater GHz data transmission using AlGaInN laser diode technology

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. Kelly

Proceedings Volume 9833, 983309 (2016) https://doi.org/10.1117/12.2208330

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Telecommunications, Defense and security, Free space optics, Data transmission, New and emerging technologies, Free space optical communications, Diodes, Data communications, Laser systems engineering

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Proceedings Article | 13 May 2016 Paper

Paper

Advances in AlGaInN laser diode technology for defence and sensing applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Proceedings Volume 9834, 98340K (2016) https://doi.org/10.1117/12.2208328

KEYWORDS: Semiconductor lasers, Gallium nitride, Free space optics, Laser applications, Defense and security, Imaging systems, New and emerging technologies, Laser systems engineering, Quantum wells, Epitaxy, Lasers

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Proceedings Article | 28 April 2016 Paper

Paper

AlGaInN laser diode bar and array technology for high-power and individual addressable applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Proceedings Volume 9892, 98920Z (2016) https://doi.org/10.1117/12.2207863

KEYWORDS: Semiconductor lasers, Gallium nitride, Free space optics, High power lasers, Laser systems engineering, Laser applications, Quantum wells, Continuous wave operation, Epitaxy

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Proceedings Article | 15 March 2016 Paper

Paper

AlGaInN laser diode technology for free-space and plastic optical fibre telecom applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Bóckowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. Kelly, M. Watson, P. Blanchard, H. White

Proceedings Volume 9739, 97390U (2016) https://doi.org/10.1117/12.2207237

KEYWORDS: Semiconductor lasers, Laser applications, Gallium nitride, Optical fibers, Telecommunications, Laser systems engineering, Airborne laser technology, Data transmission, Free space optical communications, Diodes, Fiber optic communications, Optical testing

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Proceedings Article | 26 February 2016 Paper

Paper

HVPE-GaN growth on GaN-based Advanced Aubstrates by Smart Cut

Malgorzata Iwinska, Mikolaj Amilusik, Michal Fijalkowski, Tomasz Sochacki, Boleslaw Lucznik, Ewa Grzanka, Elzbieta Litwin-Staszewska, Anna Nowakowska-Siwinska, Izabella Grzegory, Eric Guiot, Raphael Caulmilone, Martin Seiss, Tobias Mrotzek, Michal Bockowski

Proceedings Volume 9748, 974809 (2016) https://doi.org/10.1117/12.2208854

KEYWORDS: Gallium nitride, Silicon, Semiconducting wafers, Crystals, Sapphire, Etching, Raman spectroscopy, Molybdenum, Reflection, Photomasks

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Proceedings Article | 26 February 2016 Paper

Paper

AlGaInN laser diode technology for systems applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Bockowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. Kelly

Proceedings Volume 9748, 974819 (2016) https://doi.org/10.1117/12.2207231

KEYWORDS: Epitaxy, Data transmission, Continuous wave operation, Eye

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Proceedings Article | 13 October 2015 Paper

Paper

AlGaInN laser diode technology and systems for defence and security applications

Stephen Najda, Piotr Perlin, Tadek Suski, Lujca Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Scott Watson, Antony Kelly

Proceedings Volume 9649, 96490P (2015) https://doi.org/10.1117/12.2193381

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Defense and security, Information security, Telecommunications, Data transmission, Indium, Quantum wells, Free space optics

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Proceedings Article | 20 May 2015 Paper

Paper

AlGaInN laser diode technology and systems for defence and security applications

Stephen Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Scott Watson, Antony Kelly

Proceedings Volume 9466, 946604 (2015) https://doi.org/10.1117/12.2178463

KEYWORDS: Gallium nitride, Semiconductor lasers, Laser applications, Defense and security, Telecommunications, Data transmission, Laser development, Indium, Quantum wells, Epitaxy

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Proceedings Article | 12 May 2015 Paper

Paper

AlGaInN laser diode bar and array technology for high power and individually addressable applications

Stephen Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski

Proceedings Volume 9513, 95130G (2015) https://doi.org/10.1117/12.2081358

KEYWORDS: Gallium nitride, Semiconductor lasers, Laser applications, High power lasers, Quantum wells, Indium, Free space optics, Laser development, Waveguides, Near field optics

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Proceedings Article | 16 March 2015 Paper

Paper

AlGaInN laser diode technology for free-space telecom applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. Kelly, M. Watson, P. Blanchard, H. White

Proceedings Volume 9354, 93540Q (2015) https://doi.org/10.1117/12.2077459

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Data transmission, Telecommunications, Modulation, Eye, Indium, Quantum wells, Free space optical communications

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Proceedings Article | 13 March 2015 Paper

Paper

Advances in single mode and high power AlGaInN laser diode technology for systems applications

Stephen Najda, Piotr Perlin, Tadek Suski, Lujca Marona, Michal Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Julita Smalc-Koziorowska, Szymon Stanczyk, Scott Watson, Antony Kelly

Proceedings Volume 9363, 93631A (2015) https://doi.org/10.1117/12.2076268

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Quantum wells, Laser development, Indium, Epitaxy, Lasers, High power lasers, Waveguides

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Proceedings Article | 13 March 2015 Paper

Paper

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

M. Amilusik, T. Sochacki, B. Lucznik, M. Fijalkowski, M. Iwinska, J. Weyher, E. Grzanka, P. Krupczynska, A. Khachapuridze, I. Grzegory, M. Bockowski

Proceedings Volume 9363, 93630F (2015) https://doi.org/10.1117/12.2077929

KEYWORDS: Crystals, Gallium nitride, Hydrogen, Nitrogen, Gases, Raman spectroscopy, Oxygen, Silicon, Quartz, Interfaces

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Proceedings Article | 31 October 2014 Paper

Paper

AlGaInN laser diode technology for defence, security and sensing applications

Stephen Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Scott Watson, Antony Kelly

Proceedings Volume 9254, 92540Z (2014) https://doi.org/10.1117/12.2072172

KEYWORDS: Semiconductor lasers, Gallium nitride, Security technologies, Laser applications, Defense and security, Laser development, Epitaxy, High power lasers, Continuous wave operation, Waveguides

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Proceedings Article | 16 September 2014 Paper

Paper

Bulk GaN and its application as substrates in building quantum nanostructures for some electronic and optoelectronic devices

M. Bockowski

Proceedings Volume 9174, 91740G (2014) https://doi.org/10.1117/12.2059749

KEYWORDS: Crystals, Gallium nitride, Semiconductor lasers, Nitrogen, Gallium, Electronic components, Vapor phase epitaxy, Transistors, Optoelectronic devices, Nanostructures

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Proceedings Article | 8 March 2014 Paper

Paper

Advances in AlGaInN laser diode technology

S. Najda, P. Perlin, T. Suski, L. Marona, Mike Bockowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. Kelly

Proceedings Volume 8986, 89861O (2014) https://doi.org/10.1117/12.2039253

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser development, Laser applications, Epitaxy, High power lasers, Continuous wave operation, Free space optics, Indium, Quantum wells

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Proceedings Article | 5 November 2013 Paper

Paper

Advances in AlGaInN laser diode technology for defence applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski, S. Watson, A. Kelly

Proceedings Volume 8899, 88990B (2013) https://doi.org/10.1117/12.2028717

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Defense and security, Laser development, High power lasers, Free space optics, Thermal effects, Continuous wave operation, Gallium arsenide

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Proceedings Article | 23 May 2013 Paper

Paper

Advances in AlGaInN laser diode technology for defence applications

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, A. Kafar, S. Stanczyk, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Proceedings Volume 8733, 873302 (2013) https://doi.org/10.1117/12.2014753

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser applications, Defense and security, Laser development, Quantum wells, High power lasers, Near field optics, Thermal effects, Indium

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Proceedings Article | 27 March 2013 Paper

Paper

Latest developments in AlGaInN laser diode technology

S. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, Przemyslaw Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Proceedings Volume 8625, 862518 (2013) https://doi.org/10.1117/12.2006079

KEYWORDS: Semiconductor lasers, Gallium nitride, Laser development, Laser applications, Quantum wells, High power lasers, Indium, Continuous wave operation, Crystals, Cladding

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Proceedings Article | 4 March 2013 Paper

Paper

HVPE-GaN growth on ammonothermal GaN crystals

Tomasz Sochacki, Mikolaj Amilusik, Boleslaw Lucznik, Michal Boćkowski, Janusz Weyher, Grzegorz Nowak, Bogdan Sadovyi, Grzegorz Kamler, Izabella Grzegory, Robert Kucharski, Marcin Zajac, Robert Doradzinski, Robert Dwilinski

Proceedings Volume 8625, 86250B (2013) https://doi.org/10.1117/12.2003699

KEYWORDS: Crystals, Gallium nitride, Annealing, Surface finishing, Polishing, Interfaces, Gallium, Etching, X-rays, Quartz

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Proceedings Article | 4 March 2013 Paper

Paper

Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration

Michal Boćkowski, Boleslaw Lucznik, Tomasz Sochacki, Mikolaj Amilusik, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Izabella Grzegory

Proceedings Volume 8625, 862509 (2013) https://doi.org/10.1117/12.2002042

KEYWORDS: Crystals, Gallium nitride, Gallium, Nitrogen, Oxygen, Liquids, Indium, Magnesium, Liquid crystals, Polishing

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Proceedings Article | 4 March 2013 Paper

Paper

Thin AlGaN cladding, blue-violet InGaN laser diode with plasmonic GaN substrate

Szymon Stańczyk, Tomasz Czyszanowski, Robert Kucharski, Anna Kafar, Tadeusz Suski, Łucja Marona, Greg Targowski, Michał Boćkowski, Piotr Perlin

Proceedings Volume 8625, 862513 (2013) https://doi.org/10.1117/12.2002440

KEYWORDS: Cladding, Gallium nitride, Semiconductor lasers, Plasmonics, Indium gallium nitride, Near field optics, Manufacturing, Semiconducting wafers, Waveguides, Doping

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Proceedings Article | 28 February 2012 Paper

Paper

Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes

Piotr Perlin, Tomasz Czyszanowski, Lucja Marona, Szymon Grzanka, Anna Kafar, Szymon Stanczyk, Tadek Suski, Mike Leszczyński, Michal Boćkowski, Grzegorz Muzioł, Maciej Kuc, Robert Sarzała

Proceedings Volume 8262, 826216 (2012) https://doi.org/10.1117/12.906866

KEYWORDS: Gallium nitride, Semiconductor lasers, Refractive index, Absorption, Cladding, Crystals, Plasmonics, Indium gallium nitride, Waveguides, Optical simulations

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Proceedings Article | 28 February 2012 Paper

Paper

High pressure annealing of Europium implanted GaN

K. Lorenz, S. M. Miranda, E. Alves, I. Roqan, K. O'Donnell, M. Boćkowski

Proceedings Volume 8262, 82620C (2012) https://doi.org/10.1117/12.906810

KEYWORDS: Annealing, Europium, Gallium nitride, Ions, Doping, Luminescence, Backscatter, Nitrogen, Crystals, Active optics

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Proceedings Article | 28 February 2012 Paper

Paper

Estimation of the recombination coefficients in aged InGaN laser diodes

Lucja Marona, Szymon Grzanka, Robert Czernecki, Jakub Goss, Michal Bockowski, Piotr Perlin, Piotr Kruszewski, Mariusz Pluska, Andrzej Czerwinski

Proceedings Volume 8262, 826217 (2012) https://doi.org/10.1117/12.907404

KEYWORDS: Semiconductor lasers, Indium gallium nitride, Gallium nitride, Quantum wells, Reliability, Diffusion, Laser processing, Cladding, Waveguides, Reflectivity

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Proceedings Article | 17 February 2011 Paper

Paper

Plasmonic cladding InGaN MQW laser diodes

P. Perlin, K. Holc, M. Sarzynski, M. Leszczynski, R. Czernecki, L. Marona, P. Wisniewski, G. Cywinski, C. Skierbiszewski, M. Bockowski, I. Grzegory, T. Suski

Proceedings Volume 7953, 79530I (2011) https://doi.org/10.1117/12.873929

KEYWORDS: Cladding, Semiconductor lasers, Gallium nitride, Plasmonics, Refractive index, Indium gallium nitride, Nitrogen, Waveguides, Plasma, Molecular beam epitaxy

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Proceedings Article | 14 February 2008 Paper

Paper

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6910, 69100G (2008) https://doi.org/10.1117/12.755767

KEYWORDS: Gallium nitride, Crystals, Indium, Indium gallium nitride, Polishing, Semiconducting wafers, Surface finishing, Quantum wells, Manufacturing, Light emitting diodes

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Proceedings Article | 3 March 2006 Paper

Paper

Growth of bulk GaN by HVPE on pressure grown seeds

I. Grzegory, B. Łucznik, M. Boćkowski, B. Pastuszka, M. Kryśko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6121, 612107 (2006) https://doi.org/10.1117/12.645976

KEYWORDS: Crystals, Gallium nitride, Etching, Polishing, Surface finishing, Reflection, Reactive ion etching, Electrochemical etching, X-rays, Crystallography

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Proceedings Article | 3 March 2006 Paper

Paper

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method

M. Bockowski, I. Grzegory, G. Nowak, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski

Proceedings Volume 6121, 612103 (2006) https://doi.org/10.1117/12.645066

KEYWORDS: Gallium nitride, Crystals, Silicon, Gallium, Molybdenum, Tungsten, Sapphire, Liquids, Scanning electron microscopy, Nitrogen

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Showing 5 of 52 publications

Conference Committee Involvement (11)

Gallium Nitride Materials and Devices XX

27 January 2025 | San Francisco, California, United States

Gallium Nitride Materials and Devices XIX

29 January 2024 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVIII

30 January 2023 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVII

24 January 2022 | San Francisco, California, United States

Gallium Nitride Materials and Devices XVI

6 March 2021 | Online Only, California, United States

Showing 5 of 11 Conference Committees

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