Dr. Necmi Biyikli Profile

Dr. Necmi Biyikli

Visiting Research Fellow at Univ of Connecticut

SPIE Involvement:

Author

Proceedings Article | 25 August 2017 Paper

Self-aligned nanoscale processing solutions via selective atomic layer deposition of oxide, nitride, and metallic films

Necmi Biyikli, Ali Haider, Petro Deminskyi, Mehmet Yilmaz

Proceedings Volume 10349, 103490M (2017) https://doi.org/10.1117/12.2276141

KEYWORDS: Atomic layer deposition, Optical lithography, Thin films, Process control, Oxides, Nanofabrication, Metals, Thin film devices, Microelectronics, Deposition processes

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Nanoscale process integration demands novel nanopatterning techniques in compliance with the requirements of next generation devices. Conventionally, top-down subtractive (etch) or additive (deposition/lift-off) processes in conjunction with various lithography techniques is employed to achieve film patterning, which become increasingly challenging due to the ever-shrinking alignment requirements. To reduce the complexity burden of lithographic alignment in critical fabrication steps, self-aligned processes such as selective deposition and selective etching might provide attractive solutions. Selective atomic layer deposition (SALD) has attracted immense attention in recent years for self-aligned accurate pattern placement with sub-nanometer thickness control. During the atomic layer deposition (ALD) process, film nucleation is critically dependent on the surface chemistry of the substrate which makes it possible to achieve selective-ALD (SALD) by chemically modifying the substrate surface. Local modification of substrate surface opens up possibilities to achieve lateral control over film growth in addition to robust thickness control during ALD process. SALD offers numerous advantages in nanoscale device fabrication such as reduction of the lithography steps required, elimination of complicated etching processes, and minimization of expensive reagent use. In this work, we review our recent SALD efforts using various inhibition layers resulting in promising self-aligned deposition solutions for metaloxide, metal, and III-nitride thin films. We report a comprehensive investigation to select the most compatible inhibition layer among poly(methylmethacrylate) (PMMA), polyvinylpyrrolidone (PVP), and ICP-polymerized fluorocarbon layers for SALD of metal-oxide and metallic thin films. In addition, single-layer and multi-layered graphene layers are explored as plasma-compatible inhibition layers for selective deposition of III-nitride materials. Extensive materials characterization efforts are carried out to correlate the ALD recipe parameters with the selective deposition performance. The materials and deposition recipes developed in this work overcome various challenges associated with previous methods of SALD and provide alternative routes towards nano-patterning particularly for the sub-10 nm CMOS technology nodes as well as for sensors, photovoltaics, materials for energy storage, catalysis, etc.

Proceedings Article | 5 October 2015 Presentation

Template-assisted synthesis of III-nitride and metal-oxide nano-heterostructures using low-temperature atomic layer deposition for energy, sensing, and catalysis applications (Presentation Recording)

Necmi Biyikli, Cagla Ozgit-Akgun, Hamit Eren, Ali Haider, Tamer Uyar, Fatma Kayaci, Mustafa Ozgur Guler, Ruslan Garifullin, Ali Okyay, Gamze Ulusoy, Eda Goldenberg

Proceedings Volume 9553, 95530C (2015) https://doi.org/10.1117/12.2190261

KEYWORDS: Atomic layer deposition, Catalysis, Nanolithography, Nanostructures, Dye sensitized solar cells, Solar energy, Alternate lighting of surfaces, Nanostructuring, Polymers, Nanofibers

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Recent experimental research efforts on developing functional nanostructured III-nitride and metal-oxide materials via low-temperature atomic layer deposition (ALD) will be reviewed. Ultimate conformality, a unique propoerty of ALD process, is utilized to fabricate core-shell and hollow tubular nanostructures on various nano-templates including electrospun nanofibrous polymers, self-assembled peptide nanofibers, metallic nanowires, and multi-wall carbon nanotubes (MWCNTs). III-nitride and metal-oxide coatings were deposited on these nano-templates via thermal and plasma-enhanced ALD processes with thickness values ranging from a few mono-layers to 40 nm. Metal-oxide materials studied include ZnO, TiO2, HfO2, ZrO2, and Al2O3. Standard ALD growth recipes were modified so that precursor molecules have enough time to diffuse and penetrate within the layers/pores of the nano-template material. As a result, uniform and conformal coatings on high-surface area nano-templates were demonstrated. Substrate temperatures were kept below 200C and within the self-limiting ALD window, so that temperature-sensitive template materials preserved their integrity III-nitride coatings were applied to similar nano-templates via plasma-enhanced ALD (PEALD) technique. AlN, GaN, and InN thin-film coating recipes were optimized to achieve self-limiting growth with deposition temperatures as low as 100C. BN growth took place only for >350C, in which precursor decomposition occured and therefore growth proceeded in CVD regime. III-nitride core-shell and hollow tubular single and multi-layered nanostructures were fabricated. The resulting metal-oxide and III-nitride core-shell and hollow nano-tubular structures were used for photocatalysis, dye sensitized solar cell (DSSC), energy storage and chemical sensing applications. Significantly enhanced catalysis, solar efficiency, charge capacity and sensitivity performance are reported. Moreover, core-shell metal-oxide and III-nitride materials showed promise to be used in applications where flexibility is critical like functional membranes, textile and flexible electronic applications.

Proceedings Article | 25 August 2015 Presentation + Paper

Boundary element method for optical force calibration in microfluidic dual-beam optical trap

Mehmet Solmaz, Barbaros Ҫetin, Besim Baranoğlu, Murat Serhathoğlu, Necmi Biyikli

Proceedings Volume 9548, 95481D (2015) https://doi.org/10.1117/12.2190319

KEYWORDS: Particles, Optical tweezers, Channel projecting optics, Chemical elements, Calibration, Optics manufacturing, Optical calibration, Microfluidics, Optical components, Geometrical optics

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SPIE Journal Paper | 9 October 2014

Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures

Burak Tekcan, Cagla Ozgit-Akgun, Sami Bolat, Necmi Biyikli, Ali Okyay

OE, Vol. 53, Issue 10, 107106, (October 2014) https://doi.org/10.1117/12.10.1117/1.OE.53.10.107106

KEYWORDS: Gallium nitride, Ultraviolet radiation, Photodetectors, Atomic layer deposition, Palladium, Nanotechnology, Nitrogen, Optoelectronics, Semiconductors, Thin films

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Proceedings Article | 15 February 2008 Paper

Spin-orbit coupling in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas

Ç. Kurdak, H. Cheng, N. Biyikli, Ü. Özgür, H. Morkoç, V. Litvinov

Proceedings Volume 6894, 68940M (2008) https://doi.org/10.1117/12.763181

KEYWORDS: Heterojunctions, Magnetism, Aluminum, Gallium nitride, Phase measurement, Crystals, Polarization, Semiconductors, Spintronics, Magnetic semiconductors

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Proceedings Article | 8 February 2007 Paper

Magneto-transport properties of MOVPE-grown AlxGa1-xN/AlN/GaN heterostructures with high-mobility two-dimensional electron gas

N. Biyikli, H. Cheng, Ç. Kurdak, X. Ni, Y. Fu, J. Xie, I. Vurgaftman, J. Meyer, H. Morkoç, C. Litton

Proceedings Volume 6473, 647309 (2007) https://doi.org/10.1117/12.706499

KEYWORDS: Aluminum, Gallium nitride, Gallium, Resistance, Etching, Heterojunctions, Silicon, Epitaxial lateral overgrowth, Statistical analysis, Atomic force microscopy

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Proceedings Article | 8 February 2007 Paper

Nanoheteroepitaxy of GaN on columnar SiC substrates by metalorganic chemical vapor deposition

Yi Fu, Ü. Özgür, Q. Fan, N. Biyikli, S. Chevtchenko, H. Morkoç, You Ke, Robert Devaty, W. Choyke, C. Inoki, T. Kuan

Proceedings Volume 6473, 64731K (2007) https://doi.org/10.1117/12.706889

KEYWORDS: Gallium nitride, Silicon carbide, Annealing, Metalorganic chemical vapor deposition, Surface finishing, Interfaces, Hydrogen, Transmission electron microscopy, Etching, Scanning electron microscopy

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Proceedings Article | 25 March 2005 Paper

High-performance solar-blind AlGaN photodetectors

Ekmel Ozbay, Turgut Tut, Necmi Biyikli

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.582491

KEYWORDS: Sensors, Photodiodes, Aluminum, Gallium, Gallium nitride, Photodetectors, Etching, Picosecond phenomena, Ultraviolet radiation, Quantum efficiency

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Proceedings Article | 21 June 2004 Paper

Investigation of AlGaN buffer layers on sapphire grown by MOVPE

Philipp van Gemmern, Yilmaz Dikme, Necmi Biyikli, Holger Kalisch, Ekmel Ozbay, Rolf Jansen, Michael Heuken

Proceedings Volume 5366, (2004) https://doi.org/10.1117/12.529952

KEYWORDS: Aluminum, Aluminum nitride, Sapphire, Spectroscopy, Gallium, Hydrogen, Light emitting diodes, Reflectivity, Transmittance, Optical testing

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Proceedings Article | 14 August 2003 Paper

Ultrafast and highly efficient resonant-cavity-enhanced photodiodes

Ekmel Ozbay, Ibrahim Kimukin, Necmi Biyikli

Proceedings Volume 5246, (2003) https://doi.org/10.1117/12.511202

KEYWORDS: Quantum efficiency, Photodetectors, Palladium, Mirrors, Photodiodes, Sensors, Reflectivity, Indium gallium arsenide, Gallium arsenide, Absorption

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Proceedings Article | 21 May 2002 Paper

High-speed visible-blind GaN-based ITO-Schottky photodiodes

Necmi Biyikli, Ibrahim Kimukin, Tolga Kartaloglu, Orhan Aytur, Ekmel Ozbay

Proceedings Volume 4650, (2002) https://doi.org/10.1117/12.467678

KEYWORDS: Photodiodes, Gallium nitride, Quantum efficiency, Gold, Ultraviolet radiation, Palladium, Thin films, Picosecond phenomena, Transparency, Microwave radiation

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Proceedings Article | 13 April 2000 Paper

High-speed GaAs-based resonant-cavity-enhanced 1.3-um photodetector

Ekmel Ozbay, Ibrahim Kimukin, Necmi Biyikli, Gary Tuttle

Proceedings Volume 3948, (2000) https://doi.org/10.1117/12.382116

KEYWORDS: Metals, Absorption, Telecommunications, Electrons, Photodiodes, Sensors, Gallium arsenide, Mirrors, Photodetectors, Quantum efficiency

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Proceedings Article | 7 April 1999 Paper

Ultrafast photodetectors with near-unity quantum efficiency

Goekhan Ulu, Mutlu Goekkavas, M. Selim Unlu, Necmi Biyikli, Ekmel Ozbay, Orhan Aytur, Richard Mirin, David Christensen

Proceedings Volume 3629, (1999) https://doi.org/10.1117/12.344569

KEYWORDS: Sensors, Quantum efficiency, Photodetectors, Absorption, Reflectivity, Picosecond phenomena, Mirrors, Diffusion, Semiconducting wafers, Ultrafast phenomena

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Proceedings Article | 7 April 1999 Paper

High-speed high-efficiency resonant-cavity-enhanced photodiodes

Ekmel Ozbay, Ibrahim Kimukin, Necmi Biyikli, Orhan Aytur, Mutlu Goekkavas, Goekhan Ulu, M. Selim Unlu, Richard Mirin, Kristine Bertness, David Christensen, Elias Towe, Gary Tuttle

Proceedings Volume 3629, (1999) https://doi.org/10.1117/12.344566

KEYWORDS: Photodiodes, Quantum efficiency, Gallium arsenide, Mirrors, Etching, Photodetectors, Reflectivity, Telecommunications, Metals, Picosecond phenomena

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Showing 5 of 14 publications

Conference Committee Involvement (6)

Low-Dimensional Materials and Devices 2019

11 August 2019 | San Diego, California, United States

Low-Dimensional Materials and Devices 2018

22 August 2018 | San Diego, California, United States

Nanotechnology VIII

8 May 2017 | Barcelona, Spain

Nanotechnology VII

4 May 2015 | Barcelona, Spain

Nanoepitaxy: Materials and Devices VI

19 August 2014 | San Diego, California, United States

Showing 5 of 6 Conference Committees

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