Optical metrology tools have been used very successfully for measuring photomasks. The 90nm node presents new challenges with the requirement to measure dense features with arbitrary line and space widths. This paper presents performance of the Optical Proximity CD Algorithm on the new 244nm DUV optical metrology tool, the KMS100. Results for short and long-term precision, distortion, system error and xy-bias for isolated and dense line/space arrays are presented. The system is demonstrated to be highly linear and largely insensitive to the influence of OPE while maintaining high precision and repeatability.
Many techniques are used to reduce k1 for the 90nm node, including phase shift masks (PSM), assist features and optical proximity correction (OPC) features. Today, in addition to CD line widths, critical measurements of assist features, contact areas, and corner rounding, are now required to verify reticle integrity. New algorithms have been developed and implemented on the KMS100 DUV optical metrology tool to correct for iso/dense bias (optical proximity correction), assess corner rounding effects, and verify contact fidelity and printability. This paper presents new CD metrology studies for Chrome-on-Glass (COG) performed on a KMS100 DUV optical tool using these new metrology algorithms.
Manufacturing devices at the 100nm node presents new problems for the photomask metrologist. The metrologist is required to measure dense features with arbitrary line and space widths. While existing optical metrology tools are very successful at measuring isolated features with very high precision and repeatability, the conventional threshold algorithms exhibit Optical Proximity Effects (OPE) that affect the accuracy of CD measurements of both isolated and dense features. This paper presents a new CD metrology algorithm that is highly linear and largely insensitive to the influence of OPE while maintaining high precision and repeatability. The algorithm has been implemented on the new 244nm DUV optical metrology tool, the KMS-100. Demonstrated performance for the new algorithm on the DUV tool on binary masks shows better than 1.5nm, 3 sigma static repeatability down to 0.25um. Linearity, without multipoint calibration, is better than 5nm down to 0.25um for isolated lines. The OPE sensitivity (difference between measurements of isolated, dense and half isolated lines) for mask features down to 0.4um has been demonstrated to be better than 5nm over a wide range of dense lines and spaces widths.
Understanding how optical proximity effects (OPE) influence critical dimension (CD) measurements of photomasks and wafers in semiconductor manufacturing has been a subject of intense interest and investigation for many years. OPE, caused by the convolution of the intensity profiles of adjacent lines, introduces errors in the determination of the line edge position, and in turn the linewidth. This paper models several imaging systems using the Optical Transfer Function analysis method and discusses some results from an ongoing study to devise methods for calibrating CD mask metrology tools, and evaluates several different imaging objects and line measurement algorithms as to their sensitivity to the influences of OPE in the measurement of binary masks.
In the integrated circuit (IC) photomask industry today, dense IC patterns, sub-micron critical dimensions (CD), and narrow tolerances for 64 M technologies and beyond are driving increased demands to minimize and characterize all components of photomask CD variation. This places strict requirements on photomask CD metrology in order to accurately characterize the mask CD error distribution. According to the gauge-maker's rule, measurement error must not exceed 30% of the tolerance on the product dimension measured or the gauge is not considered capable. The traditional single point repeatability tests are a poor measure of overall measurement system error in a dynamic, leading-edge technology environment. In such an environment, measurements may be taken at different points in the field- of-view due to stage in-accuracy, pattern recognition requirements, and throughput considerations. With this in mind, a set of experiments were designed to characterize thoroughly the metrology tool's repeatability and systematic error. Original experiments provided inconclusive results and had to be extended to obtain a full characterization of the system. Tests demonstrated a performance of better than 15 nm total CD error. Using this test as a tool for further development, the authors were able to determine the effects of various system components and measure the improvement with changes in optics, electronics, and software. Optimization of the optical path, electronics, and system software has yielded a new instrument with a total system error of better than 8 nm. Good collaboration between the photomask manufacturer and the equipment supplier has led to a realistic test of system performance and an improved CD measurement instrument.
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