Multiple application segments from data transmission to sensing drive the demand for high-performance photonic integrated circuits. We review advancements in silicon photonics manufacturing platform for datacom and multi-Tb/s optical interconnects.
We report an 830nm high power single spatial mode DFB laser design in the AlGaAs/GaAs system that offers
performance close to a Fabry-Perot design as well as manufacturing yield compatible with volume production.
Single-mode power in excess of 200mW at case temperature up to 600C is consistently obtained for current below
300mA. This performance level is enabled by use of an efficient, partially-corrugated design and a 2nd order grating
located on the p-side. Through careful design and an optimized epitaxial re-growth on the grating, promising
reliability results compatible with uncooled application are demonstrated.
We present performance improvements of fiber-coupled pump modules and broad-area lasers at 8xx nm, 9xx nm and 14xx nm wavelengths. Broad-area lasers with a 200 μm aperture at 808 nm for direct diode applications emit 11W CW and 30W pulsed. Pump modules at 830 nm for printing applications show excellent linearity, power stability of 2% and 95% of the power within 0.12 NA into a 50 μm core fiber at 1W CW. Broad-area lasers at 880 nm for pumping applications emit 18W CW with a peak wallplug efficiency of 64%. An improved design of 9xx pump modules is demonstrated with built-in feedback-protection (>30 dB at 1060 nm) that allows safe operation in multi-kW peak-power fiber lasers. Up to 3W of optical power with slope efficiency and peak wallplug efficiency of 0.64 W/A and 46%, respectively, is presented for 14xx nm broad-area lasers with a 100 μm wide aperture.
KEYWORDS: Semiconductor lasers, High power lasers, Laser resonators, Analog electronics, Laser applications, Combustion, Resistance, Continuous wave operation, Temperature metrology, Sensors
High power single mode InGaAsP/InP DFB laser diodes with narrow linewidth and emitting near 1310nm
are key devices for Analog transmission and Sensor applications since they can be rugged and compact
sources more suited to harsh environment than solid-state or fiber-based lasers. Typically, the useful output
power of DFB sources is limited to about 100mW when sub-MHz linewidth is required Ref [1] by the so-called
"re-broadening effect" which causes the spectral linewidth to increase due to spatial-hole burning and
other effects. We report here sub-MHz linewidth at output power levels exceeding 500mW resulting from
cavity design that successfully addresses the concerns of linewidth re-broadening. Single-frequency
operation can be maintained from threshold to the high power operating point without mode hops.
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