KEYWORDS: Sum frequency generation, Resonators, Emission wavelengths, Gallium arsenide, Optical resonators, Electric fields, Signal detection, Nonlinear optics, Near field optics, Microresonators
III-V semiconductors, such as Aluminium Gallium Arsenide (AlGaAs), are known for their high refractive index and strong non-resonant second-order optical nonlinearity making them useful for building active nonlinear photonic devices. AlGaAs-based nanophotonic structures supporting anapole resonances can significantly boost the internal electric fields resulting in enhanced nonlinear optical response. However, low-quality factors of these anapolar resonances can result in poor conversion efficiency for the nonlinear optical process. Here we report enhanced sum frequency generation (SFG) from vertically stacked three-disk AlGaAs-based nanoresonators supporting anapole type resonance that exhibit an order of magnitude increase in field enhancement compared to a single-disk resonator system at the SFG wavelength. The vertically stacked resonators consist of three individual AlGaAs layers separated vertically by an under-cut Gallium Arsenide (GaAs) stem. Finite difference time domain (FDTD) simulations of the scattering cross sections were performed to optimize the dimensions of AlGaAs resonator. The optimal structure consists of three vertically stacked AlGaAs nanodisks (550 nm diameter, 50 nm height) separated by a 100 nm GaAs stem. This design ensures anapole type resonance overlap at SFG wavelength (600-670 nm). Multi-spectral SFG images were acquired by varying the input signal wavelength in the range of 1400-1800 nm, keeping the pump wavelength fixed at 1040 nm. The experimental results show a maximum SFG enhancement of approximately 50-times near the resonance wavelength of 645 nm in comparison to unpatterned multilayer samples. Optical nanostructures based on stacked AlGaAs resonators provide a very exciting platform to tailor the light-matter interactions for linear and non-linear optical applications.
In this work, partially etched amorphous silicon (a-Si) metasurface is designed and fabricated to enhance chiral THG from the a-Si nanodisks and SHG from integrated multilayer GaSe overlayers with spectrally tunable chirality. The metasurfaces are designed to support guided mode resonance in the 1500-1600 nm wavelength range. A minimum degree of circular polarization (DOCP) of -0.6 is obtained experimentally on-resonance for the inherent THG process from the silicon nanodisks with resonant enhancement of more than 5 orders. A spectrally tunable DOCP of -0.5 to 0.5 is obtained for the generated SHG from the GaSe layer on top of the silicon metasurface with resonant enhancement of more than 5 orders.
Layered material such as Transition Metal Dichalcogenides (TMDCs) are known to exhibit very high refractive index making them an excellent candidate for building resonant optical structures that facilitate strong nonlinear optical interaction. In particular, third order nonlinear processes such as third harmonic generation and four wave mixing (FWM) can be significantly boosted in thick TMDC based nanodisks by exciting non-radiating Mie resonances such as anapole modes. Here, we report enhanced FWM from isolated MoS2 disks supporting higher-order anapole resonances. The MoS2 disks were fabricated by patterning an MoS2 flake dry-transferred on a 2.2 micron thick thermal SiO2 deposited on a silicon wafer. Scattering cross sectional FDTD simulations were performed to extract the dimension of the MoS2 nanodisk to ensure higher order anapole modes lie within the desired signal wavelength range (1400-1600nm) with a fixed pump wavelength of 1040nm. The final dimensions of MoS2 disk has a diameter of 1.62μm and a height of 108nm. FWM measurements involving two pump photon and one signal photon were performed by varying the input signal wavelength. Maximum experimental enhancement of 150 times at 1470nm when compared with the un-patterned MoS2 flake region obtained. Such emerging optical nanostructure based on layered material has potential use as efficient wavelength converters across widely separated wavelength band.
Guided mode resonances (GMR) can be made angle insensitive using conical mounting of the grating relative to the external illumination. Conical mounting has been previously utilized for linear optical applications, such as optical filtering, and sensing. Here we present Third Harmonic Generation (THG) enhancement from 10 nm amorphous silicon overlayer on silicon nitride-based one-dimensional sub-wavelength grating GMR structures under conical-mounting illumination. The designed structure comprising of 70 nm deep silicon dioxide gratings of 1054 nm pitch, 50% duty cycle over which 160 nm thick silicon nitride and 10 nm a-Si layers are deposited is resonant at 1580 nm for TE polarized excitation. With increased angular spread of the incident excitation, the GMR spectral width and contrast are known to degrade. The angular aperture of the GMR structures studied here, which is defined as the angular spread across which the resonance drops to 50% of its peak value is calculated as 0.46° and 5.2° for classical and full-conical illumination respectively, highlighting the angular insensitivity of the full-conical mounting condition. Rectangular aperture masks placed in the back focal plane of the objective lens are used to limit the illumination angle along the grating wave-vector direction when compared to the grating line direction, thus achieving conical mounting condition. Experimentally, we observe the THG enhancement, defined as the ratio of on- to off-grating THG, improves from 2860 to 4742 and 1.7x104 by utilizing 0.06 NA objective and illuminating in classical configuration (no aperture) with rectangular apertures of size 3x13 mm and 1.5x13 mm respectively.
Resonant metasurfaces supporting quasi bound-states-in-continuum (BICs) resonances are particularly attractive for achieving high quality factor resonances which can be used to enhance nonlinear optical processes. In this work we first experimentally demonstrate quasi-BIC resonances in the mid infrared wavelength range using amorphous Germanium (a- Ge) based one-dimensional (1D) sub-wavelength grating structures with vertical asymmetry. The vertical asymmetric structures studied here consist of 1D a-Ge partially etched zero-contrast gratings (ZCG) on quartz substrate with the addition of a second asymmetric step-profile creating in-plane asymmetry. The vertical asymmetry added to the grating structure through the second etching step creates an open channel for accessing symmetry-protected guided mode resonances (GMR) which are otherwise experimentally inert to outgoing radiation. The fabricated device dimensions are: total height of 424 nm, ZCG etch depth of 190 nm, asymmetric step etch depth of 100 nm, pitch of 2.0 μm, and grating (asymmetric step) duty-cycles of 75% (32.5 %). FTIR measurements show clear resonance peak in the transmission spectra at ~3.2 μm wavelength for transverse magnetic (TM) polarized incidence with quality factor of ~50. We also characterize the incidence angle dependence of the measured resonance peak under classical and conical mounting condition and observe close to angle insensitive response for the latter. Next, we demonstrate third-order sum-frequency generation (TSFG) based up-conversion of the resonant mid infrared light to visible wavelengths in the presence of an additional 1040 nm pump excitation. Maximum TSFG enhancement of ~32 is obtained close to the mid infrared resonance.
We report Second Harmonic Generation (SHG) enhancement in a custom-designed vertically stacked multilayer Gallium Selenide with a low-index PMMA spacer layer. The structure obtained using an evolutionary optimization algorithm consists of two 40 nm GaSe layers separated by a 195 nm PMMA layer, with a 130 nm Silicon-dioxide layer on a Silicon substrate. This results in 11x and 303x enhancement in SHG signal when compared to a single 40nm GaSe on a 130nm and 300nm SiO2/Si substrate, respectively. This work underscores the importance of micro-cavity engineering in choosing appropriate 2D material and interspacer thickness to enhance SHG emission from popular 2D materials.
There is interest in studying nonlinear optical properties of monolayer and few-layer 2D materials due to the inherently strong nonlinear optical properties, interesting symmetry properties and polarization dependence. However, the inherent ultrathin 2D material limits the interaction length and efficiency of the nonlinear optical process studied. To overcome this limitation, 2D materials are integrated with resonant photonic structures to increase the overall nonlinear optical interaction strength. Such heterogeneously integrated structures offer the advantage of combining a range of 2D materials exhibiting diverse linear and nonlinear optical properties with prefabricated photonic structures using simple dry-transfer or chemical vapor deposition techniques. Here we will discuss some of the recent progress made in the area of heterogenous integration of 2D materials with dielectric resonant structures. We will also describe some of our recent effort in this direction in the resonant enhancement of second harmonic generation (SHG) from multi-layer Gallium Selenide coupled to silicon twodimensional resonant metasurface to achieve polarization independent SHG enhancement. We find that the designed 2D silicon resonant structures exhibit field depolarization at the resonance wavelength which needs to be accounted for when analyzing the nonlinear polarization. Furthermore, the second-harmonic signal radiated from the structure exhibits higher order diffraction effects with strong incident polarization angle dependence for the higher order diffraction components. Experimental studies on the above structures are also discussed with the observation of resonant enhancement of SHG and similar polarization dependence of the SHG on-/ off- the resonant metasurface when restricting the collection angles to the zeroth order diffracted nonlinear signal.
Dielectric nanostructures designed in sub-wavelength scale can be tuned to achieve high-Q resonances in the wavelength region of interest with a high concentration of field in and around the structure, which can be used to achieve enhanced light-matter interaction. Such dielectric metasurfaces are potentially conducive platforms for exploiting nonlinear photonic devices at lower input power levels. In this work, we design, fabricate and experimentally demonstrate one-dimensional silicon nitride based guided-mode resonant structure, which exhibits inherently low nonlinear optical effects for enhancing third harmonic signals from a conformal layer of ultra-thin amorphous silicon coated over the gratings. The GMR structures studied here consist of an etched silicon dioxide layer deposited on top of a glass substrate, followed by the deposition of a silicon nitride layer. The thickness of the silicon nitride layer is chosen (~ 160 nm) to achieve GMR resonances around 1550 nm wavelength. The resonance is found to redshift to 1580 nm in presence of the 10 nm amorphous silicon layer. THG studies on the above amorphous-silicon deposited GMR structures shows resonant enhancement of ~ 18x on-grating when compared to off-grating at the peak of the GMR resonance. The present work demonstrates the use of a silicon-processing compatible material stack to realize separately GMR resonances and nonlinear medium to achieve resonant nonlinear enhancement, thus paving the way for silicon-compatible layered nonlinear metasurfaces.
In this paper, lens design-based optimization of the optical system for a blue laser diode downconverted with remote phosphor based indoor visible light communication link is studied using optical raytracing and experimentally characterized for illumination/ communication performance. Data modulated 450nm blue laser-diode is used to excite a remote-phosphor to down-convert the blue spectrum to white which is transmitted over a direct line-of-sight free-space link and detected using an amplified p-i-n detector. The combination of transmit and receive lenses are optimized in Zemax ray-tracing software with the objective of minimizing the path loss or maximizing the light collection efficiency within the detector area when placed at different transmitter-to-receiver separation distance. It is found that contrary to the typical 1/d2 dependence typically used in VLC system models, the path loss can be minimized at the required link distance by choosing the lens to phosphor and p-i-n detector distance at the transmitter and receiver side respectively. At the optimized location, the VLC link is experimentally characterized by transmitting digital data at a maximum rate of 700 Mbps and bit error rates (BER) obtained is much below 10-3 . BER versus distance is also found to follow the inverse relation of the path-loss versus distance indicating that the optimized lens positions help in achieving improved data through-put due to minimization of the path losses. Optical spectra and color content measurements indicate that the optimized lens positioning results in enhanced blue content at the receive side due to efficient collection of the data modulated blue components at the expense of the green and red components of the down-converted white light. Further improvements to this link can be achieved by simultaneously optimizing performance at multiple wavelengths spanning blue, green and red wavelengths or using lower color temperature phosphors to improve illumination performance, albeit at the expense of some deterioration to the communication performance.
We report spatially resolved measurement of third-harmonic generation (THG) emission from a Tin diselenide (SnSe2) multi-layer flake at a fundamental excitation wavelength of 1550 nm using a nonlinear optical microscopy system and study its thickness dependence. We also estimate the magnitude of the real part of the electronic nonlinearity susceptibility (χ(3) coefficient) by analyzing the thickness-dependence and found to be approximately 1.6×10-19 m2/V2, which is around 1500 times higher than that of the glass when measured with the same settings. We find excellent agreement between the measured THG thickness dependence and the analytical model considering absorption of harmonic emission in SnSe2 medium, phase mismatch and the multipath interference due to the underlying oxide/Si substrate. We also measure the second harmonic generation from same flake and find this to be maximum for thickness in the range of 10-12nm.
Type 1 Collagen is the most abundant member of the family of collagens, which are the dominant proteins constituting the extracellular matrix (ECM) of multicellular organisms. Within tissues, Type 1 collagen exhibits a fibrillar geometry that serves as a mechanical scaffold for cells. The latter remodel the collagen through the secretion of proteoglycans (proteins with long chains of sulfated glycosaminoglycans (GAGs)), both within physiological and pathological contexts. The dermatan sulfate proteoglycans (DS-PGs) are abundantly present within the developing organs and are known to be dysregulated in diseases such as cancer. How DS alters the fibrillar architecture of collagen is however, not well known. Herein, we have used second harmonic generation (SHG) microscopy to dissect the effects of DS GAGs on Type1 Collagen polymerization. We observe that the presence of DS during polymerization enhances the width and number of the fibers, the surface occupancy (which we define as the ability of the collagen matrix to fill a given volume) and the mean SHG signals. We then image polymerizing collagen matrices at temporal intervals: at very early time points (<6 h), the SHG signals in both control and DS-treated polymerizing Type-1 collagen are low and do not show any difference. However, there is a sudden increase in SHG signals 6 h onwards, with a sharper and significantly increased enhancement in the presence of DS. Our results suggest the presence of DS kinetically alters the collagen polymerization leading to significant changes in its eventual architecture.
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