Dr. Ron Kaspi Profile

Dr. Ron Kaspi

Mid-IR Laser Group Leader at Air Force Research Lab

SPIE Involvement:

Author

Proceedings Article | 1 April 2022 Presentation

Mid-IR broad area angled cavity diode lasers

Chi Yang, Matthew Suttinger, Alan Paxton, Chunte Lu, Ron Kaspi

Proceedings Volume PC11987, PC119870S (2022) https://doi.org/10.1117/12.2614806

KEYWORDS: Semiconductor lasers, Mid-IR, Waveguides, Broad area laser diodes

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Proceedings Article | 5 March 2022 Presentation

High-brightness architectures for quantum cascade lasers

Matthew Suttinger, Chi Yang, Sanh Luong, Rowel Go, Chunte Lu, Ron Kaspi

Proceedings Volume PC12009, PC120090I (2022) https://doi.org/10.1117/12.2616049

KEYWORDS: Quantum cascade lasers, Fabry–Perot interferometers, Waveguides, Superlattices, Polarization, Phased arrays, Multiplexing, Mid-IR, Laser development, Amplifiers

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Proceedings Article | 9 March 2020 Presentation

High-brightness GaSb-based quantum-well lasers with an unstable resonator (Conference Presentation)

Chi Yang, Ron Kaspi, Alan Paxton, Chunte Lu

Proceedings Volume 11301, 113011N (2020) https://doi.org/10.1117/12.2550390

KEYWORDS: Resonators, Quantum wells, Laser resonators, Ion beams

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Proceedings Article | 2 March 2020 Paper

Iron: zinc selenide laser, pumping with pulse width that is shorter than or comparable to the population-inversion lifetime

Alan Paxton, Chunte Lu, Ron Kaspi

Proceedings Volume 11266, 112661M (2020) https://doi.org/10.1117/12.2549789

KEYWORDS: Iron, Pulsed laser operation, Optical pumping, Semiconductor lasers, Absorption, Atmospheric propagation, Diode pumped solid state lasers, Solid state lasers

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Proceedings Article | 20 February 2017 Presentation + Paper

On-chip unstable resonator cavity 2-um quantum well lasers

Chi Yang, Alan Paxton, Chunte Lu, Timothy Newell, Ron Kaspi

Proceedings Volume 10123, 101231D (2017) https://doi.org/10.1117/12.2249696

KEYWORDS: Resonators, Semiconductor lasers, Quantum wells, Diffraction, Laser resonators, Aluminum, Cameras, Waveguides

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Proceedings Article | 4 June 2015 Paper

Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties

Elizabeth Steenbergen, Zhiyuan Lin, Said Elhamri, William Mitchel, Yong-Hang Zhang, Ron Kaspi

Proceedings Volume 9451, 945114 (2015) https://doi.org/10.1117/12.2177696

KEYWORDS: Superlattices, Interfaces, Temperature metrology, Infrared radiation, Luminescence, Infrared detectors, Indium arsenide, Stereolithography, Phonons, Magnetism

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Proceedings Article | 10 March 2015 Paper

Electrical diagnositics of quantum cascade lasers

Peter Eliseev, Chi Yang, Tim Newell, Ron Kaspi

Proceedings Volume 9382, 93821R (2015) https://doi.org/10.1117/12.2076663

KEYWORDS: Quantum cascade lasers, Resistance, Diodes, Laser damage threshold, Semiconductor lasers, Mid-IR, Physics, Semiconductors, Heterojunctions, Continuous wave operation

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Proceedings Article | 10 March 2015 Paper

Improved efficiency in room temperature >3µm diodes using highly strained quantum wells

Chunte Lu, Ron Kaspi, Tim Newell, Chi Yang, Sanh Luong, Don Gianardi

Proceedings Volume 9382, 93821Q (2015) https://doi.org/10.1117/12.2076391

KEYWORDS: Quantum wells, Semiconductor lasers, Diodes, Temperature metrology, Mid-IR, X-ray diffraction, Quantum efficiency, Waveguides, Indium gallium arsenide antimonide, Gallium antimonide

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Proceedings Article | 4 February 2013 Paper

Tunable excitation of mid-infrared optically pumped semiconductor lasers

Linda Olafsen, Jeremy Kunz, Andrew Ongstad, Ron Kaspi

Proceedings Volume 8631, 86312N (2013) https://doi.org/10.1117/12.2008808

KEYWORDS: Optical pumping, Semiconductor lasers, Mid-IR, Absorption, Laser countermeasures, Quantum wells, Laser optics, Active optics, Indium gallium arsenide antimonide, Fiber lasers

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Proceedings Article | 9 February 2012 Paper

Optically pumped type-II mid-IR tunable DFB laser

Xiang He, R. Kaspi, S. Brueck

Proceedings Volume 8277, 82771C (2012) https://doi.org/10.1117/12.909033

KEYWORDS: Mid-IR, Tunable lasers, Semiconductor lasers, Optical pumping, Quantum cascade lasers, Wavefronts, Waveguides, Laser development, Spherical lenses, Atmospheric sensing

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Proceedings Article | 23 October 2007 Paper

High performance optically pumped antimonide mid-infrared lasers

Ron Kaspi, Andrew Ongstad, Gregory Dente, Michael Tilton, Joseph Chavez, Donald Gianardi, Ray Barresi

Proceedings Volume 6738, 673806 (2007) https://doi.org/10.1117/12.736986

KEYWORDS: Optical pumping, Resonators, Semiconductor lasers, Quantum wells, Mid-IR, Laser resonators, Waveguides, Gallium antimonide, Mirrors, Heterojunctions

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Proceedings Article | 22 March 2007 Paper

Small footprint InGaSb/AlGaAsSb multiple-quantum-well light-emitting diodes

Nathan Withers, Gennady Smolyakov, Hongjun Cao, Ron Kaspi, Marek Osiński

Proceedings Volume 6468, 646802 (2007) https://doi.org/10.1117/12.717247

KEYWORDS: Light emitting diodes, Diodes, Lead, Mid-IR, Infrared imaging, Infrared radiation, Gallium antimonide, Electrodes, Infrared sensors, Manufacturing

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Proceedings Article | 29 October 2001 Paper

Optically pumped type-II antimonide mid-IR lasers with integrated absorber layers

Ron Kaspi, Andrew Ongstad, Charles Moeller, Gregory Dente, Michael Tilton, J. Chavez, Donald Gianardi

Proceedings Volume 4594, (2001) https://doi.org/10.1117/12.446549

KEYWORDS: Mid-IR, Indium arsenide, Optical pumping, Temperature metrology, Semiconductor lasers, Quantum wells, Heterojunctions, Indium, Imaging spectroscopy, Gallium antimonide

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Proceedings Article | 31 July 1998 Paper

Self-guiding effects in semiconductor waveguide amplifiers

Carl Kutsche, Patrick LiKamWa, John Loehr, Ron Kaspi

Proceedings Volume 3384, (1998) https://doi.org/10.1117/12.317656

KEYWORDS: Solitons, Optical amplifiers, Waveguides, Semiconductors, Gallium arsenide, Phase shifts, Phase measurement, Heterojunctions, Sensors, Diodes

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Proceedings Article | 24 April 1995 Paper

Novel applications of low-energy ions in molecular beam epitaxy of III-V semiconductors

Scott Barnett, Joanna Mirecki-Millunchick, Jose Labanda, Ron Kaspi, L. Hultman

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206892

KEYWORDS: Ions, Gallium arsenide, Molecular beam epitaxy, Modulation, Silicon, Semiconductors, Argon, Interfaces, Indium gallium arsenide antimonide, Etching

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Showing 5 of 15 publications

Conference Committee Involvement (1)

Infrared Optoelectronics: Materials and Devices

4 September 2012 | Evanston, Illinois, United States

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