In this paper, the research and analysis of mesa-type InGaAs FPA detectors with various pixel structures were reported. Three different pixel mesa structures in FPA were designed, including conventional mesa structure, double-mesa and surface pn junction mesa. The numerical simulation of above three pixel mesa structure devices and the conventional pixel planar structure device was carried out, and the optimal pixel structure was determined by comparing the electrical crosstalk and dark current. The results showed that the surface pn junction mesa structure can reduce the surface leakage current of the device by effectively suppressing the electric field of the device mesa etched surface, which was beneficial for reducing the difficulty of passivation protection process. InGaAs FPA detectors with surface pn junction mesa structure can simultaneously have relatively low electrical crosstalk and low dark current characteristics.
Using the frequency domain analysis method, the thermocouple time constant in the dynamic measurement of laser power is analyzed, and the pole of the thermocouple is compensated by the frequency domain analysis method, thus expanding the frequency domain range of the measurement system. On this basis, by measuring the response curve of the power detector, its time constant is determined, and its transfer function is obtained by designing a predictive circuit. The designed prediction circuit is simulated, and the optimal design parameters are obtained, which doubles the frequency response and reduces the response time constant to the step function from T to T/2. Through the test of the actual circuit, the results are basically consistent with the theoretical calculation results, which can meet the rapid detection needs of high-power detectors.
InGaAs-based p-i-n Photo-Detectors (PDs) on misoriented Si and conventional Si substrates are both designed, fabricated, and characterized. It is found that the as-grown PD structure on misoriented Si substrate has lower dislocation density than on conventional Si substrate. The PD fabricated on misoriented Si substrate shows a low dark-current of 83nA under −5 V, a zero bias voltage responsivity of 0.58 A/W at 1550 nm, the corresponding quantum efficiency is 46%. The dark-current and quantum efficiency at 1550 nm, of the PD on misoriented Si substrate, is about over one orders of magnitude lower and 70% higher respectively, than the comparison PD fabricated on conventional Si substrate.
High In content InGaAs films have important applications in the field of 2.1-2.4μm Infrared photodetector. In this paper, it has been obtained by Metal-Organic Chemical-Vapor Deposition (MOCVD) technique on 2-inch InP (100) substrates. Photoluminescence (PL) spectroscopy and HR-XRD spectrum have been employed to study the structural characteristics of InAlAs composite buffer layers and InGaAs epilayers. We found the 2.04μm PL peak in the sample, which is the result of photoluminescence of the high in content (≥65%) InGaAs film, we can reasonably suspect that the stress derived from the lattice mismatch has been effectively released by growing InAlAs composite buffer layers. The Reciprocal Space Method (RSM) is used for measuring the relaxation of InAlAs composite buffer layers. The results indicate that the InAlAs composite buffer structure with 3% step size can more effectively release the stress caused by lattice mismatch.
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