Ultrawide-band-gap (UWBG) semiconductors have attracted much attention for deep-ultraviolet (DUV) photonics and high-power electronics. However, the physical understanding is in infancy, preventing the potential capacities of UWBG semiconductors to be drawn out. Therefore, the electronic and optical properties should be fully elucidated using such as DUV spectroscopy. Whereupon, another obstacle stands that DUV spectroscopy itself is immature. In the presentation, we therefore talk about the development of DUV scanning near-field optical microscope and the optoelectronic properties of AlN studied by DUV luminescence spectroscopy.
Spontaneous and stimulated emission spectroscopies were performed on transparent aluminum nitride (AlN) substrates grown by hydride vapor-phase epitaxy. The stimulated emission was observed from cryogenic to room temperatures and the origin was assigned by the spontaneous emission spectra and existing theories. AlN exhibited a purely excitonic stimulated emission at cryogenic temperatures, whereas the stimulated emission mechanism at room temperature originated from an exciton-electron scattering process. The temperature-induced and excitation-power-induced stimulated emission crossovers were found and interpreted in terms of the peculiar excitonic structure of AlN.
Photoluminescence, electroluminescence, and bias-dependent time-resolved photoluminescence spectroscopies are performed to study the current injection efficiency, internal quantum efficiency, and light external quantum efficiency of 265-nm AlGaN DUV LEDs grown on AlN substrates. The studies showed that the current injection and light extraction efficiencies, and not the internal quantum efficiency, limit the external quantum efficiency. To solve the issue, we revisited the effect of Si-doping in AlN. Our spectroscopic study deduced the significantly lower neutral Si donor bound exciton and Si donor binding energies than those reported, indicating the possibility to realize highly conductive and transparent n-type AlN:Si layers.
Photoluminescence spectroscopy using a scanning near-field optical microscope (SNOM) is a powerful technique to study luminescence properties of III-Nitride semiconductors. To date, we have developed a SNOM with an excitation and a detection wavelength of 210 nm and >220 nm, respectively.[1] The deep-ultraviolet (DUV) SNOM has the shortest operation wavelength ever reported and visualizes the localized emission nature of Al-rich AlGaN quantum wells with a spatial resolution exceeding 150 nm. In the presentation, recent progresses of our study using the DUV-SNOM are given.
[1] Ishii et al., APL Photonics 4, 070801 (2019).
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.