Schottky graphite / p-InP diodes were first fabricated by transferring the drawn graphite film to an InP substrate with a hole-type conductivity. As a result of research, the main mechanisms of current transfer through Schottky diodes graphite / p-InP were determined: these are multistage tunneling-recombination processes involving surface states at the graphite / p-InP interface and tunneling, which is described by Newman's formula at direct displacement; tunneling with reverse displacement. The studied heterojunctions have pronounced diode characteristics with a rectification coefficient k ≈ 102 (at V = 1 V). It is shown that the created graphite / p-InP Schottky diodes have a potential barrier height of 0.71 eV
This paper reports the results of an investigation of the electrical and photoelectrical properties of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction formed by the deposition of thin films PEDOT:PSS on CdZnTe substrates. The Cd1–xZnxTe solid solution with low Zn content was grown by the Bridgman method at low cadmium vapor pressure and had a low resistivity ρ ≈ 102 Ohm•cm. The values of the series resistance Rs and shunt resistance Rsh of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction were determined from the dependence of their differential resistance Rdif. The temperature dependencies of the height of the potential barrier of the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunction was determined from the I-V characteristics. The dominating current transport mechanisms through the Graphite/PEDOT:PSS/n-CdZnTe organic-inorganic heterojunctions were determined.
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