The correlation between the process parameters of auxiliary ion source and the SiO2 film stress was systematically studied using dual-ion-sputtering deposition. Spectrophotometer and ellipsometer were used to measure the SiO2 film’s transmittance spectrum and reflection ellipsometry. The refractive index and thickness of SiO2 film were obtained by total spectrum inversion calculation. The laser interferometer measures the substrate surface shape to obtain film stress. The experimental result shows that film stress is related to sputtering energy during deposition, high-energy oxygen ion assisted deposition can significantly reduce it and the assisted ion beam voltage plays an important role in controlling it by data normalization analysis. Ultra-low stress high reflective film was prepared by dual-ion-beam sputtering deposition, where stress was 70% lower than traditional film. At the same time, this film can ensure sufficiently high optical quality to keep it reliable and stable in high-precision laser systems.
Ta2O5 film has low absorption in the range of visible wavelength and it has high refractive index and thermal stability. So it is widely used to prepare low loss films. Ta2O5 single layer with different oxygen flow rates were prepared by ion beam sputtering technique. The refractive index and absorption characteristics of metal oxide films were compared at different oxygen flow rates. The refractive index and absorption of thin film materials were studied by ellipsometry technology and surface thermal lens technology. The results show that: the absorption of Ta2O5 film is decreased first and then increased with the increase of oxygen flow. When oxygen flow is 40 sccm, the absorption is smallest, only 4.4ppm. And the refractive index is decreased with oxygen flow increasing, after oxygen flow reached 40 sccm, the refractive index tend to be stable.
Titanium dioxide (TiO2) thin films have been receiving much attention in the past as their chemical stability and high refractive index. In this paper, TiO2 thin films were prepared on fused silica substrates by ion beam sputtering technique and then are annealed at different temperature. The effects of the annealing temperature on the optical and structural properties of TiO2 thin films were studied. The results show that the refractive index, extinction coefficient of the TiO2 thin film decrease with the increase of annealing temperature. When the annealing temperature is higher than 350°C, the surface of TiO2 thin films shows an uneven mesh crack, which forms a significant film damage. The experimental results indicated that thermal treatment can effectively change the optical properties of the TiO2 thin films.
Six groups of single-layer Alumina (Al2O3) thin films with different oxygen flow rate were prepared by ion beam sputtering. The oxygen flow rate changed from 0 sccm to 50 sccm with the interval of 10 sccm. The transmission spectrum, reflection spectrum and ellipsometric reflection spectrum of Al2O3 thin films were analyzed by cody-lorentz model inversion calculation. The surface roughness of six groups of samples was measured by white light interferometer. The effects of oxygen flow on band gap, Urbach band-tail absorption, deposition rate, surface roughness, deposition rate of Al2O3 thin films were studied. The experimental results showed that oxygen flow directly affects the band gap, Urbach tail absorption, deposition rate, surface roughness and deposition rate of Al2O3 thin films.
Yttrium oxide (Y2O3) thin films has been prepared on glass substrates at room temperature by thermal evaporation technique using Y2O3 powders (99% purity) and then are annealed at different temperatures ranging from 150℃ to 450℃ for 24 hours in air. The effects of the annealing temperatures on the structural and optical properties of the Y2O3 thin films were studied. The results show that the refractive index, extinction coefficient and forbidden band width of the Y2O3 thin film change to different degrees with the increase of annealing temperature. In addition, the roughness and stress of the Y2O3 thin film showed a trend of increasing first and then decreasing. The crystal state of the film is improved, indicating that the grain size becomes large. The research indicates that annealing treatment can effectively change the optical properties and structural properties of the Y2O3 thin films which has guiding significance for the selection of optimal heat treatment temperature for Y2O3 film modification.
Hafnium oxide (HfO2) thin films has been prepared on glass substrates at room temperature by thermal evaporation technique using HfO2 powders (99% purity) and then are annealed at different temperatures ranging from 150° to 450° for 24 hours in air. The effects of the annealing temperatures on the structural and optical properties of the HfO2 thin films were studied. Amorphous structures of the HfO2 films were researched by XRD technology. The results of the study show that the state of the HfO2 film changes from amorphous to polycrystalline with the increase of heat treatment temperature and the the stress is released. Besides, the refractive index of the films decreases and the band energy changes significantly. Therefore, the heat treatment can effectively change the film properties and it is necessary to comprehensively select the optimal heat treatment temperature according to the specific application of the HfO2 thin films.
Bandpass filters are indispensable to the development of advanced optical and electro-optical systems used in space, defense, and terrestrial applications. In this paper, wideband deep cutoff bandpass filter of 750-900nm was designed and prepared by ion beam sputtering deposition technology. Long wave pass filter with high transmittance from 750 to 900nm and low transmittance from 400 to 730nm was designed and prepared on one side of the HB720 substrate. Short wave pass filter with high transmittance from 750 to 900nm and low transmittance from 930 to 1100nm was designed and prepared on the other side of the HB720 substrate. From the measured transmittance curve, the average transmittance was above 96% from 750nm to 900nm, the transmittance at the wavelength of 728nm and 928nm was less than 0.1%. The results indicated that high quality bandpass filter can be manufactured using the combination method of long-wave and short-wave filters.
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