The demand for ever smaller features in integrated circuit manufacturing continues to put more stringent
requirements on photomask fabrication, particularly with respect to critical dimension (CD) control. A high
resolution process for making attenuated-phase-shift masks (attPSM) for the 45nm node with a negative-tone
chemically amplified resist (nCAR), utilizing a new precision bake system, was evaluated. This process showed
a significant performance improvement in critical dimension uniformity (CDU), respective to an established
process based on an APB5500 system. A CD-uniformity improvement from 2.1nm CD 3σ to 1.3nm CD 3σ
(40%) was achieved on a demanding layout. The new precision bake system utilizes an improved multi-zone
hotplate design and control algorithm, which enables highly precise temperature controllability, facilitating a
superior temperature ramp-up performance, as well as significantly improved temperature setpoint stability, as
has been measured with a 25-point sensor mask for a 95°C bake process. The new precision bake system shall
now be introduced to the market within the HamaTech MaskTrack series.
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