State-of-the-art semiconductor lasers can deliver average power, linewidth, and beam quality suitable for supporting differential absorption (DIAL) instruments that are competitive with fiber and solid-state lasers. An all-semiconductor transmitter architecture can enable a drastic reduction in size, weight, and power consumption (SWaP) of the instrument, while allowing for beneficial wavelength agility. Crucially, this reduction in SWaP can enable the implementation of compact airborne and spaceborne profiling DIAL instruments with high power output, while the broad spectral coverage of semiconductor laser technology allows the adaption and tuning of the transmitter design across a variety of operating scenarios. In this work, we present the first demonstration of volumetric ranging based on an all-semiconductor intensity-modulated CW (IMCW) transmitter. For this proof-of-concept demonstration, we used Rayleigh backscattering in optical fiber to emulate the atmospheric backscattering return echo. The range-resolved profile is reconstructed using matched filtering of the return echo, a technique widely adopted in CW radar. Finally, we present a theoretical analysis grounded in CW radar theory, showing excellent agreement with the results measured across a wide range of transmitted waveforms and return target configurations.
The planetary boundary layer (PBL) is a key interface of energy exchange between the surface and atmosphere, however, current spaceborne sensors are not optimized to measure in this region. There is significantly more PBL temperature and humidity information content in the microwave spectrum that current satellite instruments resolve. The photonic spectro-radiometer developed under NASA ESTO ACT-20 program capable of fully resolving the microwave spectrum to return all PBL information in the microwave spectrum. A novel photonic integrated circuit is designed having integrated a modulator for up-conversion of signals into optics domain, an arrayed waveguide grating and star couplers with filters.
Many of the high accuracy Earth science survey missions are planned to use laser-based remote sensing instruments. The 2-μm laser wavelength is of particular interest due to the presence of many CO2 and H20 absorption lines in its vicinity1. Transmitter architectures are typically composed of an optically pumped, frequency-stable, solid-state seed laser and a high-power optical amplifier.2, 3 Taking advantage of the reliability and relative simplicity of semiconductor lasers, this architecture can substantially improve by replacing the solid-state light source with semiconductor lasers of comparable performance. This approach will greatly improve the system reliability, and will simplify instrument integration and space qualification. There are currently very limited semiconductor lasers operating in the 2-μm range with performance satisfactory enough for use as an injection seed in a laser absorption spectrometer. Optimally, seed lasers producing greater than 50 mW of continuous-wave (CW), with frequency jitter of less than 1 MHz are desired to reliably resolve the CO2 absorption lines near 2-μm. In this paper, we report the demonstration of high-power, single-longitudinal-mode laterally coupled distributed feedback (LC-DFB) lasers at 2.05 μm wavelength. We measured more than 80 mW of CW power at -10 ºC for devices with a 4-μm-wide ridge and 2-mm-long cavity.
Lifetime data is presented for ruggedized commercial NPRO lasers used in the Tropospheric Emission Spectrometer (TES) Instrument on NASA’s Aura Earth-orbiting spacecraft, including 20 years of data from two life test units on the ground, 12 years of on-orbit data from TES Laser A, and 2 years of on-orbit data from TES Laser B. The TES lasers are diode-pumped Non-Planar Ring Oscillator (NPRO) lasers using Nd:YAG crystals. Since accelerated life testing was not possible on the complete laser, early prototype lasers that had gone through thermal cycling and vibration testing were placed on non-accelerated life tests with the hope of gathering at least a couple of years of data before launch. Long-term lifetime data for hybrid laser systems in space applications is not abundant, and out of necessity, accelerated reliability testing is usually done over a relatively short time with a large number of devices. The data presented in this paper is unique as it tracks the optical power output over time of a total of four lasers on the order of decades rather than months or years. Two of the lasers have each been on life test for over 20 years on the ground and are still operating, and the other two lasers have been on-orbit for 14 years. TES Laser A was still operating when the TES Instrument was decommissioned in January 2018. Therefore, the data presented covers over 450,000 non-accelerated device-hours, with 23% of those hours being in space.
The Lunar Flashlight (LF) mission will send a CubeSat to lunar orbit via NASA’s Space Launch System (SLS) test flight. The LF spacecraft will carry a novel instrument to quantify and map water ice harbored in the permanently shadowed craters of the lunar South Pole. The LF instrument, an active multi-band reflectometer which employs four high power diode lasers in the 1-2 μm infrared band, will measure the reflectance of the lunar surface near water ice absorption peaks. We present the detailed instrument design and system engineering required to deploy this instrument within very demanding CubeSat resource allocations.
We report on room-temperature, continuous-wave operation of single-mode quantum cascade lasers designed for
minimal threshold power consumption in the 4 to 10 μm spectral range. Narrow-ridge distributed feedback lasers were
developed with plasma-etched sidewall corrugations and infrared-transparent dielectric cladding, enabling fabrication
without any epitaxial steps beyond the initial growth of the planar laser wafer. The devices exhibit single-mode emission
with stable, mode-hop-free tuning and side-mode suppression greater than 25 dB. We demonstrate packaged single-mode
devices with continuous-wave threshold power consumption near 1 W above room temperature.
We demonstrate GaSb-based laterally-coupled distributed-feedback type-I cascade diode lasers emitting near 2.9 μm as
potential sources for OH measurements. The laser heterostructures consist of two GaInAsSb quantum well stages in
series separated by GaSb/AlSb/InAs tunnel junction and InAs/AlSb electron injectors. Single-mode emission is
generated using second order lateral Bragg grating etched alongside narrow ridge waveguides. The lasers were
fabricated into 2-mm-long devices, solder-mounted epi-up on copper submounts, and operate at room temperature. With
an anti-reflection coating at the emission facet, the lasers exhibit a typical current threshold of 110 mA at 20 °C and emit
more than 14 mW of output power. The Bragg wavelength temperature tuning rate was 0.29 nm/°C.
Broad area type-I GaSb based diode lasers have recently exceeded 100 mW continuous wave room temperature powers
in 3.1-3.2 μm spectral region. Certain applications such as single frequency sources for spectroscopy and efficient
coupling to single mode fiber require single lateral mode laser operation. We characterize and compare two types of
lasers with similar structures and various ridge widths emitting at 3.1 and 3.2 μm. We obtain 35 and 25 mW of
continuous wave single lateral mode power from 8 and 13 μm wide ridge lasers emitting at 3.1 and 3.2 μm respectively.
This constitutes a threefold improvement compared to the previous result. Both devices had ridges etched to the depth
leaving approximately 300 nm of the top p-cladding in the areas outside the ridges. For 3.2 μm emitting lasers the
dielectric thickness was 220 nm while it was 510 nm for 3.1 μm emitting lasers. Gain spectra were measured by Hakki-
Paoli technique for various ridge widths. From gain spectra we extract differential gain and internal loss. We find that the
internal loss in thin dielectric, 3.2 μm emitting laser is about 14 cm-1 while it is 7 cm-1 in thick dielectric, 3.1 μm emitting
laser for the ridge widths of 13 and 8 μm exhibiting single lateral mode operation respectively. Internal losses measured
on broad area, 100 μm wide lasers processed from the same materials are similar and around 6-7 cm-1. We discuss
reasons for the internal loss increase with the aid of simulation of optical mode field and loss in our waveguide
structures.
The air quality of any manned spacecraft needs to be continuously monitored in order to safeguard the health of the
crew. Air quality monitoring grows in importance as mission duration increases. Due to the small size, low power draw,
and performance reliability, semiconductor laser-based instruments are viable candidates for this purpose. Achieving a
minimum instrument size requires lasers with emission wavelength coinciding with the absorption of the fundamental
absorption lines of the target gases, which are mostly in the 3.0-5.0 μm wavelength range. In this paper we report on our
progress developing high wall plug efficiency type-I quantum-well GaSb-based diode lasers operating at room
temperatures in the spectral region near 3.0-3.5 μm and quantum cascade (QC) lasers in the 4.0-5.0 μm range. These
lasers will enable the development of miniature, low-power laser spectrometers for environmental monitoring of the
spacecraft.
The air quality of any manned spacecraft needs to be continuously monitored in order to safeguard the health
of the crew. Any fire event, accidental release of harmful gaseous contaminants or a malfunction in the air
revitalization system has to be detected as fast as possible to provide enough time for the crew to react. In this
paper, a fast sensor system based on laser spectroscopy is presented, which is able to detect three important
gases: carbon monoxide for fire detection, hydrogen chloride for fire characterization and oxygen to monitor the
air vitalization system. To provide a long maintenance-free operation time without the need for any consumables
except power, a calibration-free measurement method was developed, which is only based on molecule specific
constants which are available from the molecular data base HITRAN. The presented sensor offers the possibility
for reliable and crosssensitivity-free air quality monitoring over a large pressure and temperature range.
We propose and have demonstrated a prototype high-reliability pump module for pumping a Non-Planar Ring Oscillator
(NPRO) laser suitable for space missions. The pump module consists of multiple fiber-coupled single-mode laser diodes
and a fiber array micro-lens array based fiber combiner. The reported Single-Mode laser diode combiner laser pump
module (LPM) provides a higher normalized brightness at the combined beam than multimode laser diode based LPMs.
A higher brightness from the pump source is essential for efficient NPRO laser pumping and leads to higher reliability
because higher efficiency requires a lower operating power for the laser diodes, which in turn increases the reliability
and lifetime of the laser diodes. Single-mode laser diodes with Fiber Bragg Grating (FBG) stabilized wavelength permit
the pump module to be operated without a thermal electric cooler (TEC) and this further improves the overall reliability
of the pump module. The single-mode laser diode LPM is scalable in terms of the number of pump diodes and is capable
of combining hundreds of fiber-coupled laser diodes. In the proof-of-concept demonstration, an e-beam written
diffractive micro lens array, a custom fiber array, commercial 808nm single mode laser diodes, and a custom NPRO
laser head are used. The reliability of the proposed LPM is discussed.
Semiconductor lasers emitting at 1.55 microns are the cornerstone of the high bandwidth optical communications industry. Semiconductor lasers operating at this and other wavelengths are also used in the engineering, biology, chemistry and medical fields. The light emission in most semiconductor lasers is due to the optical transition between the valence and conduction bands of the semiconductor active material. This means that the intrinsic properties of the semiconductor active material i.e., the bandgap energy dictates the emission wavelength. This limits the efficient operation of these lasers at wavelengths above 3 microns. In the mid 1990s this limitation was overcome with the emergence of new laser architectures, such as the intersubband and interband Quantum Cascade (QC) lasers. The emission wavelength in these QC lasers is set by engineering the bandgap to extend the accessible spectral range well beyond 3 microns. Optical radiation from intersubband QC lasers is emitted by electrons undergoing an optical transition between the quantized energy levels in the conduction band rather than by direct transition from the conduction to the valence bands as in conventional semiconductor lasers. Quantum engineering of the electronic energy levels has enabled demonstration of intersubband QC lasers covering a very wide spectral range from 3.5 to 150 microns (except for a window for the Reststrahlen gap). Despite rapid and tremendous progress in the research and development of these QC laser sources, the technology is far from being sufficiently mature to be deployed for use in space instruments. We will discuss our efforts at the Jet Propulsion Laboratory to advance QC laser technology sufficiently to enable their use in new instruments for future NASA Earth and Solar System Exploration missions.
Narrow linewidth (< 100 KHz) semiconductor lasers are expected to be a key technology in NASA's stellar interferometry missions to search for planets around nearby stars. Long coherence length lasers are needed for precise (20 pm to 5 nm) measurements of the optical path difference. This work discusses results using the self-heterodyne delay technique to measure 1.3 um InP based DFB lasers. We will also address practical issues concerning detection and elimination of back reflections, choice of fiber length and resolution, and measurement of laser l/f and current supply noise.
We present experimental results of coupled opto-electronic oscillators (COEO) constructed with a semiconductor optical amplifier based ring laser, a semiconductor Fabry-Perot laser, and a semiconductor colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.
The continued need for increased bandwidth is driving the pursuit of both increased speed in TDM and more channels in WDM for fiber optic communication systems. Multiwavelength arrays of monolithic mode-locked DBR lasers are an attractive source for future high bit rate (100 - 800 Gb/s) optical communication systems. Monolithic mode-locked lasers in the colliding-pulse mode-locked configuration have been fabricated, with DBR end mirrors for wavelength selection. A continuous gain region has been employed for ease of fabrication and the elimination of multiple reflections within the cavity. Arrays containing up to 9 wavelengths have been fabricated, with all the wavelengths within the erbium-doped fiber amplifier gain bandwidth. An RF signal is applied to the saturable absorber for synchronization to an external clock and reduction of the phase noise. For a 4.6 mm cavity, short (< 10 ps) optical pulses at high (approximately 18 GHz) repetition rates have been achieved. Low single side-band phase noise values (-107 dBc/Hz 100 kHz offset) have been demonstrated, nearly equal to that of the RF source.
We demonstrate the realization of coupled opto-electronic oscillators (COEO) with different semiconductor lasers, including a ring laser, a Fabry-Perot laser, and a colliding pulse mode-locked laser. Each COEO can simultaneously generate short optical pulses and spectrally pure RF signals. With these devices, we obtained optical pulses as short as 6 picoseconds and RF signals as high in frequency as 18 GHz with a spectral purity comparable with a HP8561B synthesizer. These experiments demonstrate that COEOs are promising compact sources for generating low jitter optical pulses and low phase noise RF/millimeter wave signals.
The microwave optoelectronic oscillator (OEO) has been demonstrated on a breadboard. The future trend is to integrate the whole OEO on a chip, which requires the development of high power and high efficiency integrated photonic components. In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material. The best devices have threshold currents of 50-mA at room temperature for CW operation. The device length is approximately 3-mm, resulting in a mode spacing of 14 GHz. For only 5-dBm microwave power applied to the modulator section, modulation response with 30 dB resonate enhancement has been observed. This work shows the promise for an on-chip integrated OEO.
Wavelength division multiplexed systems place stringent requirements on the absolute wavelength and wavelength spacing of the elements in laser arrays. Ridge waveguides (RW) show excellent potential for practical implementation due to their simple fabrication with relaxed fabrication tolerances, high reliability and good performance. An analysis of the fabrication tolerances for RW and buried heterostructure (BH) devices is performed, showing the advantages offered by the ridge design. The performance limitations that are common to both BH and RW devices will be discussed. Experimental results for four element distributed feedback ridge laser arrays at 1.55 micrometers will be presented as well.
An optical link can provide an interface channel for a focal plane array that is immune to electro-magnetic interference (EMI) and can lower the heat load on the dewar. Our approach involves the use of fiber optics and an on-focal-plane optical modulator to provide an interface to the focal plane array (FPA). The FPA drives the modulator with an electrical signal. We evaluated specially fabricated AlGaAs/GaAs multiple-quantum-well (MQW) optical modulators, operating near 840 nm, for analog modulation, and we have used the results to calculate the performance of an optical interface link using experimentally determined device parameters. Link noise and dynamic range for an analog link were estimated from a separate experiment using pigtailed fiber components. The performance of the MQW modulator system is compared to alternative strategies. Significant improvement in performance in comparison to conventional electronic interfaces appears to be possible.
An optical link can provide an interface channel for the focal-plane array that is immune to electromagnetic interference (EMI) and can lower the heat load on the dewar. Our approach involves the use of fiber-optics and an on-focal-plane optical modulator to provide an interface to the focal-plane array (FPA). The FPA drives the modulator with an electrical signal. We evaluated specially fabricated AlGaAs/GaAs multiple quantum well (MQW) optical modulators, operating near 840 nm, for analog modulation, and we have used the results to calculate the performance of an optical interface link using experimentally determined device parameters. Link noise and dynamic range for an analog link were estimated from a separate experiment using pigtailed fiber components. The performance of the MQW modulator system is compared to alternative strategies. Significant improvement in performance in comparison to conventional electronic interfaces appears to be possible.
A 980 nm ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single quantum well laser with a maximum single-ended output power of 240 mW from a facet coated device has been fabricated from a graded index separate confinement heterostructure grown by molecular beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22% coupling efficiency into a 1.55 micrometers single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.
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