Laser generated blue light can be exploited in many fields (welding of metals, entertainment, biomedical…). Several of these applications require an autonomous and compact laser source, with emitted power in the order of tens of watts, keeping low cost-per-watt and enabling high-volume production. Present paper reports a new blue laser multi-emitter source, relying on proprietary low-SWaP (Size Weight and Power consumption) architecture, and integrating on the same package the electronics to control, monitor, perform automatic measurements and satisfying safety requirements. The dedicated electronics is designed to drive the high voltage required by the GaN semiconductor diodes connected in series. This integrated electronic multi-emitter demonstrated emitted power of 100 W on 105 μm core fiber, together with a Numerical Aperture (N.A.) of 0.16.
This paper describes the family of blue laser modules developed in Convergent Photonics, relying on a proprietary architecture of spatial and polarization multiplexing and making use of the same platform and assembly lines of similar 9xx nm laser diode multi-emitters. This proprietary technology leads to high emitted power, together with unprecedented - for blue laser sources - low SWaP (Size Weight and Power consumption) and high brightness, suitable for a cost reduction over high volume productions. Present realization is an extremely compact (53 mm × 138 mm × 14.6 mm) laser source, based on a spatial and polarization multiplexing of 20 diodes, with a 114 um core / 125 um cladding multimode fiber output. Prototypes demonstrated power in excess of 100 W at 450 nm, with 95 % of emitted power filling only 0.15 numerical aperture (N.A.).
Blue laser diode sources have already proved to be an effective alternative for material processing, especially of high reflective materials, such as copper; now the challenge is to increase their power while improving brightness and reducing the cost-per-watt. The paper presents the development of a family of blue laser modules that, making use of the same platform and assembly lines of similar 9xx nm modules, can achieve an unprecedented combination of power, brightness, compactness and cost reduction. These modules rely on a proprietary architecture to combine a plurality of chips through spatial and polarization multiplexing, obtaining up to 100W of output power in a 100 μm fiber. Preliminary experimental results for module making use of spatial multiplexing report 35W output power in a 50 μm fiber.
This paper reports a multi-emitter laser module realization, based on internally developed InGaAs/GaAs 190 μm ridge High Power Diode Lasers (HPDL), emitting at 976 nm. Single diode lasers shown a highly efficient power conversion and good emitted beam characteristics together with excellent long term reliability. The multi-emitter laser module, using 20 diodes polarization and spatially multiplexed, demonstrated up to 350 W of output power at 976 nm; the absence of fiber coupling degradation at high bias currents, thanks to the limited beam blooming from the laser diodes, ensure a good linearity in the operating conditions. The package has a compact footprint of 54 mm x 140 mm, with an output fiber of 200 um core / 220 um cladding, and 95 % of the emitted power is within 0.16 numerical aperture (N.A.). Present realization of high-power multi-emitter semiconductor laser source is suitable for production of high power single modules fiber laser, moreover contributing to an important reduction of the overall fiber laser cost by effectively reducing the number of the pump modules.
This paper reports preliminary performances of a multiemitter diode laser module using ten spatially multiplexed Distributed Bragg Reflector - High Power Diode Laser (DBR-HPDL) chip, emitting 100 W CW in the 920 nm range, with 95 % of power in 0.17 N.A., on a 135 um core / 155 um cladding multimode fiber, and stabilized spectrum width of only 0.6 nm.
Diode chip implemented an integrated multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths using a manufacturable, reliable and high yield technology. Up to three pitches, DBR-HPDLs 2.5 nm spaced have been demonstrated on same wafer with excellent uniformity of performances across the wafer and emitted wavelengths.
Since the absence of any wavelength locking optical element in the collimated beam path, multiemitter module of DBRHPDL was assembled and tested in the production line using standard assembly process flow and without requiring any special alignment, as maturity demonstration of the proposed technology for mass production of wavelength stabilized high-power laser modules.
KEYWORDS: Semiconducting wafers, High power lasers, Semiconductor lasers, Diodes, Optics manufacturing, Manufacturing, Electron beam lithography, Reflectivity, Wafer-level optics, High power diode lasers
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 14W CW in the 920nm range. Key feature is the use of a multiple-order Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. In present paper, on the same wafer, three pitches DBR-HPDLs 2.5nm spaced have been demonstrated with excellent characteristics of power, spectral purity and stability. Moreover, excellent uniformity of performances across the wafer with different emitted wavelengths demonstrates the maturity of proposed technology for high yield, high volume laser diode production for wavelength stabilized applications.
This paper reports a DBR High Power Diode Laser (DBR-HPDL) realization, emitting up to 10W in the 920 nm range. High spectral purity (90% power in about 0.5 nm), and wavelength stability versus injected current (about 5 times more than standard FP laser) candidates DBR-HPDL as a suitable device for wavelength stabilized pump source, and high brightness applications exploiting Wavelength Division Multiplexing. Key design aspect is a multiple-orders Electron Beam Lithography (EBL) optical confining grating, stabilizing on same wafer multiple wavelengths by a manufacturable and reliable technology. Present paper shows preliminary demonstration of wafer with 3 pitches, generating DBRHPDLs 2.5 nm spaced.
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