Material and functional stability remains a major issues in field of perovskite photovoltaics. To achieve a long device lifetime, it is crucial that we understand and optimize the lifetime of the material itself. One-step antisolvent processing is a facile method to enhance stability. Herein, we report that changes in the degradation process of perovskite films is modified by the antisolvent treatment in comparison to the conventional film without the process which we measure by monitoring the emission. Perovskite films prepared with anti-solvent processing have improved film morphology and reduced evolution of surface metallic lead, which correlated with improved film lifetimes.
III-V semiconductor nanowires allow easy hetero-integration of optoelectronic components onto silicon due to efficient strain relaxation, well-understood design approaches and scalability. However continuous room temperature lasing has proven elusive. A key challenge is performing repeatable single-wire characterization { each wire can be different due to local growth conditions present during bottom-up growth. Here, we describe an approach using large-scale population studies which exploit inherent inhomogeneity to understand the complex interplay of geometric design, crystal structure, and material quality. By correlating nanowire length with threshold for hundreds of nanowire lasers, this technique reveals core-reabsorption as the critical limiting process in multiple-quantum-well nanowire lasers. By incorporating higher band-gap nanowire core, this effect is eliminated, providing reflectivity dominated behavior.
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