Zinc magnesium oxide is a ternary compound wide bandgap semiconductor. Incorporation of Mg into ZnO helps in increasing the of p-type conductivity by affecting the background n-type nature of ZnO. This is possible because Mg incorporation in ZnO elevates the conduction band edge which in turn increases the distance between the shallow donor level and conduction band minima, resulting increase of activation energy for background donor. In this work, we report Spin-on Dopant technique to dope phosphorus in Zn0.85Mg0.15O lattice. The undoped ZnMgO thin film (sample A) was deposited using RF sputtering. The SOD sample (sample B) was prepared using P509 spin on dopant and kept approximate 1cm above ZnMgO film at 600°C for four hours. The doped sample was annealed at temperature 700°C (sample C) in oxygen ambient to see the high temperature annealing effect on doping. In studies of high-resolution x-ray diffraction, a dominant (002) peak was observed in sample A, B, and C at 34.173°, 34.624°, and 34.638° respectively. The shifting of (002) peak at higher angle for doped samples indicates the phosphorus doping in film. The XPS spectra of phosphorus 2p peak are appears at ~134 eV indicates the presence of P atoms as P-O bonds in ZnMgO lattice. The Donor-Acceptor pair (DAP) transition peak around 3.473eV and free Acceptor (AX°) peak around 3.588eV were found in photoluminescence spectra of sample B revels the phosphorus doping in ZnMgO.
SOD is a type of conventional doping technique where diffusion of dopant atom takes place from the liquid source to film by thermal annealing of sample. The study shows the SOD process is a cost effective, less destructive and an efficient way to dope ZnO film. We have doped ZnO films with phosphorus atom by simply annealing it in atmospheric furnace up to 600°C for 4 hrs. After in-situ annealing SOD process, sample has also been ex-situ annealed at 900°C in oxygen ambient for 10 secs. The elemental analysis of phosphorus 2p peak at 132.62 eV ensures the existence of P-O bond for doped sample which shows phosphorus replacing Zn and bonding with oxygen in to the lattice in order to make Pzn-2Vzn an acceptor complex. The doped samples showed the photoluminescence peak at 3.32eV and 3.35eV, which attributed to free electron to acceptor (FA) and acceptor-bound exciton (A0X) energy as an evidence of acceptor doping in ZnO film. The ex-situ annealing of doped sample further improves in passivation of deep level defects of film. All sample has (002) orientation, and a compressive stress to be found in the doped sample due to phosphorus replacing Zn, are confirmed by analysis of XRD results.
ZnMgO is extensively being used in UV based optoelectronic applications owing to its high bandgap and excitonic emissions at room temperature. In many applications, UV-Vis detection is required such as spectroscopy, medical applications and plasmonics. ZnMgO film and silicon can work in parallel to give a broad UV-Vis response. We fabricated ZnMgO/Si UV-Vis photo detector. UV-Ozone annealing can be used to increase the responsivity due to an increase in photoconductive gain. Here in this report, we have shown the effect of UV-Ozone on the transient behavior of the photodetector. The calculated responsivity values for 300 nm, 400 nm and white light were 3 A/W, 95 A/W and 50 A/W respectively. After UV-Ozone corresponding responsivity increased to 5 A/W, 180 A/W and 105 A/W respectively. The transient response of the photodetector was measured for asfabricated and UV-Ozone annealing. The transient behavior was fitted into two time constant of rise and fall time and switching parameters at 300 nm, 400 nm and white light are compared. The lesser time constant indicates carrier generation and recombination and the larger time constant is related with traps capture and release process. Rise time for 300 nm, 400 nm and white light was estimated to be 100, 10 and 8 ms respectively and the corresponding fall times were 140, 45 and 40 ms. Rise time for 300 nm illumination decreased from 100 to 70 ms after UV-Ozone.
ZnO thin films and nanorods are being used for UV optoelectronic applications such as UV-detectors, UVLEDs and Laser diodes because of its large bandgap (3.37 eV) and high excitonic binding energy at room temperature (60 meV). However native point defects in as grown ZnO films need to be suppressed before its device application. Here in this work, a comparative study on the effect of UV-Ozone annealing on the optical properties of ZnO thin films and nanorods have been carried out. Thin films were deposited using RF sputter system and hydrothermal route was used for nanorods growth, followed by UVO annealing for 50 min. Field emission gun scanning electron microscopy (FEG-SEM) confirmed formation of high density nanorods. High resolution X-ray diffraction (HRXRD) results exhibited (002) crystal orientation as the dominant peak for all samples. Calculated grain size for as-grown thin films and nanorods were 27 nm and 37 nm respectively. After UVO annealing it increased to 35 and 47 nm respectively. Room temperature photoluminescence showed enhancement in near band emissions (NBE) for both thin films and nanorods. Maximum enhancement in NBE as compared to as-grown for thin films and nanorods were found to be 6.6 and 3.6 times, respectively. Maximum NBE to DBE integrated area ratio for thin films and nanorods were 0.17 and 0.70 respectively.
Zinc magnesium oxide has emerged as a potential candidate for sensing and optoelectronic applications due to its structural advantages over ZnO. However, especially for UV-optoelectronic device applications, suppression of defects bound emissions in thin films and nanorods are a challenging task. In this report, we show comparison of enhancement in near-band emission and suppression in the defects-band emissions in ZnMgO thin film and nanorods using UV-Ozone (UVO) annealing. Thin films were deposited using RF sputter system and hydrothermal route was used to grow nanorods on the rapid thermal annealed ZnMgO seed layer (as-grown) followed by UVO annealing for 10, 30, 50, 70 and 90 min. Field-emission gun scanning electron microscopy confirmed growth of high density nanorods. High-resolution x-ray diffraction pattern exhibited <002> peak for all samples and a gradual increase in grain size. Room temperature photoluminescence (PL) spectra showed highest NBE emission for 10 min in thin films and 50 min for nanorods. Calculated NBE to DBE integrated area ratio increased to 1.2 for 10 min in thin films and 7.8 times for 50 min nanorods sample as compared to respective as-grown samples. Activation energy calculated from NBE integrated area of nanorods temperature-dependent PL confirmed that 50 min annealed sample showed the highest activation energy. Authors would like to acknowledge DST, India and IITBNF.
ZnO, a wide band gap material, has interesting features like high electron mobility, high optical transparency and costeffectiveness. The major drawback of using ZnO as the channel layer is the presence of point defects which affects the carrier concentration. Carrier concentration (n) and interface states of the thin film greatly influence its threshold voltage, thus controlling the intrinsic defects of the film and passivation of interface states is crucial to reduce the threshold voltage variation. UV-Ozone (UV-O) treatment can be used to suppress these defects by supplying reactive oxygen to the film. In this report, we have studied grain boundary, carrier concentration and interface charge effects separately to emulate the effect of UV-O treatment. We have incorporated two distinct defect levels in our model for acceptor-like and donor-like defects in the grain boundary. The electrical parameter extraction was carried out in Silvaco using the TCAD simulator. We have observed an enhancement in corresponding electron mobility from 142.9 to 149.9 cm2 /Vs, along with the positive shift in threshold voltage from -0.40 to -0.25 V, with the decrease in number of grain boundaries. With change in carrier concentration, mobility of the device was increased from 44.2 to 150 cm2 /Vs. Passivation of interface charge density from 1 x 1012 to 1 x 1010 cm-2 in our model resulted in a significant change in the threshold voltage from 1.25 V to -0.4 V. Authors would like to acknowledge Department of Science and Technology (DST), India and IIT Bombay.
Wide bandgap of 3.37 eV and large exciton binding energy of 60 meV inherited by ZnO has attracted a lot of attention in order to establish it as a potential candidate for the optoelectronic devices. The main challenge encountered for its efficient utilization is default n-type behaviour of ZnO due to the existence of native donor defects. Therefore, achieving p-type behaviour has been a tough job and significant efforts have been made by the research community over the last couple of decades in this direction. Observing the drawbacks shown by the mono-doped samples in achieving p-type ZnO, co-doping has emerged out to be a promising technology with the benefits of increasing dopant solubility and reducing ionization energy. In this report, we have studied the effects of variation in boron implantation dose by varying implantation time to 2 and 4 s on the behaviour of phosphorus implanted (implantation time of 70 s) ZnO thin films, using plasma immersion ion implantation (PIII) technique. Samples were annealed at 800°C for 10 s in oxygen ambient. High resolution X-ray diffraction (HRXRD) showed enhanced phosphorus solubility for 4 s boron co-doped sample. Improved P-O bonding was observed for higher boron co-doped sample from high resolution X-ray photoelectron spectroscopy (HRXPS) measurement. Low temperature photoluminescence (PL) spectra demonstrated donor-acceptor pair (DAP) and free acceptor (FA) peaks at around 3.24 and 3.31 eV, respectively with 4 s boron co-doped sample showing dominant FA peak indicating improved acceptor based optical emission for it.
Zinc magnesium oxide (ZnMgO) thin films has emerged as a promising material for optoelectronic applications in last decade. Its high electron mobility makes it a good candidate for thin film transistors applications used in active matrix of LCDs (AMLCDs). ZnMgO thin film have inherent n-type conductivity due to oxygen vacancies, oxygen interstitials and zinc vacancies. For thin film transistors (TFTs), control of doping and defects is very important to maintain carrier concentration and proper threshold voltage of device. Threshold voltage of device is greatly influenced by carrier concentrations and stoichiometry of the film. So defects need to be minimized/controlled for achieving best device performances. These defects can be controlled using reactive oxygen supplied by UV-Ozone treatment by varying the rate and time of oxygen supply. In this study we report effect of UV-Ozone treatment on bottom gate enhancement type ZnMgO TFT using air as source of oxygen for Ozone. ZnMgO thin film was deposited using RF sputter technique using ZnMgO target. Titanium (Ti)/Gold (Au) was deposited to fabricate source and drain contacts. The fabricated TFT was characterized for input characteristics. Post UVO treatment, an increase of two times in drain current is measured along with a decrease in the threshold voltage by 5.8V. The On-OFF (ION/IOFF) ratio for as-deposited film was 7.5 × 103 which increased to 2 × 104 for UVO annealed TFT.
Over the past few years, zinc oxide nanorods (ZnO NRs) have started emerging as a promising candidate in the area of optoelectronics and various sensor applications due to their structural advantages over the thin film. Enhancing near band edge emission (NBE) with suppression in the defect state emission (DBE) is a challenging problem for utilizing hydrothermally grown ZnO NRs in device application. In this work, we are reporting improvement in NBE and decrement in the DBE peak intensities with post growth UV-Ozone (UV-O) treatment. Hydrothermal bath process was used to fabricate nanorods on the annealed ZnO seed layer followed by UV-O treatment for 20 minutes. Growth of the nanorods was confirmed using field emission gun scanning electron microscopy (FEGSEM). Room temperature photoluminescence (PL) spectra of sample B shows 1.6 times enhancement of NBE/DBE ratio as compared to as grown sample A. Reduction in the oxygen vacancies was confirmed using high resolution x-ray photoelectron spectroscopy (HRXPS), where it was observed to reduce from 25% for as-deposited sample to 7% for UVO annealed sample, leading to increase of NBE/DBE ratio, as observed from PL spectra. High resolution x-ray diffraction (HRXRD) pattern exhibited dominant (002) peak from both samples. A slight right shift was observed in HRXRD peak which suggest improvement in stoichiometric ratio for UV-O treated sample.
Owing to wide band gap and high exciton energy of ZnMgO can be used in UV based applications like laser diodes, LED and as transparent conducting oxide in solar cells. In present work, we study the effect of UVOzone (UVO) annealing on RF sputtered ZnMgO thin films. Here, we have deposited ZnMgO thin films on Si <100< substrate followed by UVO annealing treatment for 30 min. The as-deposited and UVO treated films were characterized using various optical, structural and elemental characterization techniques and compared with as-deposited ZnMgO thin films. Room Temperature PL results for as-deposited film exhibited dominant defects band emission (DBE) peak intensities in visible region with negligible emission from near band emission (NBE) peak. An increase in NBE emission peak at around ~ 360 nm (3.44eV) with minimal defect states emission was observed for UVO treated sample. NBE to DBE Intensity ratio (INBE/IDefect) of 1.7 was observed from sample B which was almost zero for as-grown film. High resolution X-ray diffraction (HRXRD) results exhibited (002), (220) and (311) crystal orientation peak in as-deposited sample. Post UVO (002) peak shifted to higher angle side. X-ray photoelectron spectroscopy results of Zn-2p and O-1s shows increase in metal-oxide bonds and decrease in oxygen vacancies. Atomic force microscopy results show increase in film roughness from 2.3 to 2.46 nm for as-deposited and UVO treated sample respectively. Authors would like to acknowledge IITBNF for all its facilities at IIT Bombay.
UV photodetector have been successfully implemented in various applications like ozone sensing, communication, astronomy and flame detection etc. Zn(Mg)O is a wide band gap material with high excitonic binding energy at room temperature thus making it a promising material in optoelectronic industries. In the present work, we are achieving increased photocurrent and high responsivity in UV-A regime with post growth UV-ozone treatment from photodetector fabricated using RF sputtered ZnMgO thin film. The thin film was deposited on semi-insulating silicon wafer at 400C for 20 min followed by 70 min UV-Ozone treatment. The final step was to fabricate an interdigitated electrode on the processed samples. More than two times enhancement of photocurrent was observed after UVO treatment. Noteworthy responsivity values of 22 A/W and 67 A/W were measured from as-deposited and UVO annealed photodetector, respectively at 380 nm with an applied bias of -5 V bias. However, the measured detectivity values for as grown and UV-O annealed sample was 1.3 × 1013 and 2.7 × 1013, respectively. Noise equivalent power in as-deposited sample and UVO treated sample was estimated to be 2.4 × 10-12 W/√Hz and 1.1 × 10-12 W/√Hz respectively. Photo detector fabricated with UV-O annealing exhibited good switching behaviors with 37 ms and 30 ms rise and fall time, respectively.
Semiconductor industry thrives on the principle of continuous improvement and it has come a long way relying on that. Zinc oxide (ZnO) semiconductors is one such candidate whose bandgap can be tuned by assimilation of Mg thus making it a promising candidate for various optoelectronic applications. But as in case with ZnO, zinc magnesium oxide (ZnMgO) too has difficulty in achieving p-type conductivity due to native donor defects. For achieving p-type conductivity in such materials, co-doping technique seems to be the most viable solution as it improves the acceptor solubility and also lowers acceptor energy levels. In this report, we have studied the effect of boron doping on the optical and structural properties of phosphorus doped Zn0.85Mg0.15O thin film. Plasma immersion ion implantation (PIII) technique was used to dope RF sputtered Zn0.85Mg0.15O film with phosphorus for 70 s followed by boron doping for 5 s. The sample was further annealed at 1000oC in oxygen ambience for 10s. Low temperature photoluminescence (PL) spectra exhibited improvement in acceptor type behaviour with free acceptor (FA) peak at around 3.55 eV and near band edge (NBE) emission was further improved with the presence of free exciton (FX) peak at around 3.65 eV. These peaks were absent in phosphorus doped sample. High resolution x-ray diffraction (HRXRD) showed <002< orientation for codoped samples. X-ray photoelectron spectroscopy (XPS) confirmed the presence of boron and increment in phosphorus concentration with co-doping.
Inherent properties of wide bandgap (3.37 eV) and high exciton binding energy (60 meV) have helped zinc oxide (ZnO) to claim its potential in the area short-wavelength optoelectronic devices. Furthermore, it exhibits n-type conductivity due to presence of native defects which has restricted its effective utilization in junction devices. Doping ZnO to achieve p-type conductivity has been an area of interest over the last couple of decades. Taking into consideration the limitations imposed by mono-dopant on the p-type behaviour achieved, co-doping has emerged out to be promising technique with the advantage of increasing dopant solubility and reducing ionization energy. In this report we have studied the enhancement in properties of phosphorus doped ZnO thin film with boron as a co-dopant. Doping was done using plasma immersion ion implantation (PIII) technique where phosphorus was implanted for 70 s and subsequently boron for 10s followed by annealing at 800oC for 10 s in oxygen ambient. Low temperature photoluminescence (PL) spectra showed improvement in the acceptor behaviour with donor-acceptor pair (DAP) and free acceptor (FA) peaks observed at around 3.24 and 3.31 eV, respectively for co-doped sample as compared to phosphorus doped sample which did not show these peaks. High resolution x-ray diffraction (HRXRD) showed c-axis (<002<) orientation of the film with increase in peak intensity and angle for the co-doped sample. For co-doped sample, a blue-shift was observed for E2H peaks in Raman spectra with increase in peak intensities suggesting an improvement in the film crystallinity.
Zinc oxide (ZnO), a wide bandgap (3.37 eV) semiconductor with large exciton binding energy (60 meV), is a promising candidate for optoelectronics application. The bottleneck to harness its capability is linked to the default ntype nature imposed on the material by native defects. Thus, controlling its conductivity (p, i or n) with post growth processes is a strenuous task. Phosphorus is a preferred p-type dopant because of its large solubility. In this report, we have studied the effect of variation in phosphorus implantation time to 40, 60 and 70s on the optical and structural properties of ZnO thin films. Plasma immersion ion implantation technique was carried out to dope the thin film deposited by RF sputter technique and samples were further annealed at 900oC in oxygen ambience for 10s. Low temperature photoluminescence (PL) spectra showed improvement in acceptor behaviour with increase in doping time. Sample doped for 70s exhibited maximum number of acceptor based excitonic peaks at around 3.24, 3.31 and 3.35 eV corresponding to donor-acceptor pair (DAP), free acceptor (FA) and acceptor-bound (AoX) excitons, respectively. High resolution x-ray diffraction showed dominant (002) peak from all samples and increase in phosphorus implantation time shifted the peak towards higher 2θ angle. X-ray photoelectron spectroscopy further suggested increment in phosphorus concentration with implantation time as the number of peaks corresponding to P-O bond observed from P 2p spectra was improved. Scanning electron microscopy images revealed better annihilation of implantation defects post annealing.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.