Prof. Sylvester A. Porowski Profile

Prof. Sylvester A. Porowski

at Institute of High Pressure Physics

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 27 March 2013 Paper

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig Wasilewski, Sylwester Porowski, Czesław Skierbiszewski

Proceedings Volume 8625, 862527 (2013) https://doi.org/10.1117/12.2003850

KEYWORDS: Indium, Indium gallium nitride, Nitrogen, Gallium, Chemical species, Gallium nitride, Crystals, Indium nitride, Molecular beam epitaxy, Diffusion

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Proceedings Article | 4 March 2013 Paper

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski

Proceedings Volume 8625, 862512 (2013) https://doi.org/10.1117/12.2001997

KEYWORDS: Gallium nitride, Indium gallium nitride, Semiconductor lasers, Plasma, Waveguides, Quantum wells, Cladding, Nitrogen, Diodes

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Proceedings Article | 28 February 2008 Paper

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, T. Swietlik, L. Marona, T. Stacewicz, P. Perlin

Proceedings Volume 6894, 68940Q (2008) https://doi.org/10.1117/12.762871

KEYWORDS: Temperature metrology, Indium gallium nitride, Quantum wells, Gallium nitride, Semiconductor lasers, Laser damage threshold, Laser stabilization, Spectroscopes, Phonons, Copper

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Proceedings Article | 15 February 2008 Paper

Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability

L. Marona, P. Wiśniewski, M. Leszczyński, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, A. Czerwinski, M. Pluska, J. Ratajczak, P. Perlin

Proceedings Volume 6894, 68940R (2008) https://doi.org/10.1117/12.762220

KEYWORDS: Semiconductor lasers, Quantum wells, Gallium nitride, Indium gallium nitride, Reliability, Diffusion, Laser damage threshold, Laser stabilization, Magnesium, Temperature metrology

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Proceedings Article | 14 February 2008 Paper

Secrets of GaN substrates properties for high luminousity of InGaN quantum wells

M. Leszczynski, I. Grzegory, M. Boćkowski, B. Łucznik, T. Suski, P. Perlin, R. Czernecki, G. Targowski, M. Sarzyński, M. Kryśko, P. Prystawko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6910, 69100G (2008) https://doi.org/10.1117/12.755767

KEYWORDS: Gallium nitride, Crystals, Indium, Indium gallium nitride, Polishing, Semiconducting wafers, Surface finishing, Quantum wells, Manufacturing, Light emitting diodes

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Proceedings Article | 8 February 2007 Paper

Comprehensive study of reliability of InGaN-based laser diodes

L. Marona, M. Sarzynski, P. Wi?niewski, M. Leszczy?ski, P. Prystawko, I. Grzegory, T. Suski, S. Porowski, R. Czernecki, G. Kamler, A. Czerwinski, M. Pluska, J. Ratajczak, P. Perlin

Proceedings Volume 6485, 648504 (2007) https://doi.org/10.1117/12.699001

KEYWORDS: Semiconductor lasers, Gallium nitride, Reliability, Laser damage threshold, Diffusion, Indium gallium nitride, Crystals, Diodes, Gallium, Quantum efficiency

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Proceedings Article | 8 February 2007 Paper

Tunable broad-area InGaN laser diodes in external cavity

K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, M. Maszkowicz, P. Perlin

Proceedings Volume 6485, 648502 (2007) https://doi.org/10.1117/12.698285

KEYWORDS: Semiconductor lasers, Indium gallium nitride, Diffraction gratings, Gallium nitride, Diodes, Spectroscopy, Pulsed laser operation, Antireflective coatings, Mirrors, Spectroscopes

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Proceedings Article | 17 April 2006 Paper

Load dislocation density broad area high power CW operated InGaN laser diodes

P. Perlin, P. Wiśniewski, R. Czernecki, P. Prystawko, M. Leszczyński, T. Suski, I. Grzegory, L. Marona, T. Świetlik, K. Komorowska, S. Porowski

Proceedings Volume 6184, 61840H (2006) https://doi.org/10.1117/12.662912

KEYWORDS: Semiconductor lasers, Pulsed laser operation, Continuous wave operation, Gallium nitride, Indium gallium nitride, High power lasers, Gallium, Crystals, Aluminum

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Proceedings Article | 14 April 2006 Paper

Reliability of InGaN laser diodes grown on low dislocation density bulk GaN substrates

L. Marona, P. Wisniewski, P. Prystawko, S. Porowski, T. Suski, M. Leszczynski, I. Grzegory, R. Czernecki, P. Perlin, T. Riemann, J. Christen

Proceedings Volume 6184, 61840G (2006) https://doi.org/10.1117/12.662327

KEYWORDS: Semiconductor lasers, Quantum efficiency, Gallium nitride, Laser damage threshold, Indium gallium nitride, Reliability, Quantum wells, Mirrors, Optical coatings, Diffusion

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Proceedings Article | 3 March 2006 Paper

Growth of bulk GaN by HVPE on pressure grown seeds

I. Grzegory, B. Łucznik, M. Boćkowski, B. Pastuszka, M. Kryśko, G. Kamler, G. Nowak, S. Porowski

Proceedings Volume 6121, 612107 (2006) https://doi.org/10.1117/12.645976

KEYWORDS: Crystals, Gallium nitride, Etching, Polishing, Surface finishing, Reflection, Reactive ion etching, Electrochemical etching, X-rays, Crystallography

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Proceedings Article | 3 March 2006 Paper

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method

M. Bockowski, I. Grzegory, G. Nowak, G. Kamler, B. Łucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski

Proceedings Volume 6121, 612103 (2006) https://doi.org/10.1117/12.645066

KEYWORDS: Gallium nitride, Crystals, Silicon, Gallium, Molybdenum, Tungsten, Sapphire, Liquids, Scanning electron microscopy, Nitrogen

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Proceedings Article | 3 March 2006 Paper

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

C. Skierbiszewski, G. Cywiński, M. Siekacz, A. Feduniewicz-Zmuda, L. Nevou, L. Doyennette, M. Tchernycheva, F. Julien, J. Smalc, P. Prystawko, M. Kryśko, S. Grzanka, I. Grzegory, J. Domagała, T. Remmele, M. Albrecht, S. Porowski

Proceedings Volume 6121, 612109 (2006) https://doi.org/10.1117/12.646014

KEYWORDS: Aluminum, Quantum wells, Gallium nitride, Absorption, Indium, Telecommunications, Polishing, Plasma, Molecular beam epitaxy, Superlattices

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Proceedings Article | 22 February 2006 Paper

Broad-area high-power CW operated InGaN laser diodes

P. Wiśniewski, R. Czernecki, P. Prystawko, M. Maszkowicz, M. Leszczyński, T. Suski, I. Grzegory, S. Porowski, M. Marona, T. Świetlik, P. Perlin

Proceedings Volume 6133, 61330Q (2006) https://doi.org/10.1117/12.645049

KEYWORDS: Semiconductor lasers, Continuous wave operation, High power lasers, Gallium nitride, Indium gallium nitride, Laser damage threshold, Pulsed laser operation, Diodes, Gallium, Crystals

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Proceedings Article | 12 October 2005 Paper

Potential of MBE for gallium nitride based lasers

S. Porowski, C. Skierbiszewski

Proceedings Volume 5958, 59580Z (2005) https://doi.org/10.1117/12.622908

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Gallium, Quantum wells, Optoelectronic devices, Aluminum, Semiconductors, Doping, Interfaces

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Proceedings Article | 1 April 2005 Paper

Properties of violet laser diodes grown on bulk GaN substrates

Piotr Perlin, Lucja Marona, Tomasz Swietlik, Michal Leszczynski, Pawel Prystawko, Przemyslaw Wisniewski, Robert Czernecki, Gijs Franssen, Szymon Grzanka, Grzegorz Kamler, Jola Borysiuk, Janusz Weyher, Izabella Grzegory, Tadeusz Suski, Sylwester Porowski, Till Riemann, Jurgen Christen

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.587040

KEYWORDS: Gallium nitride, Semiconductor lasers, Crystals, Laser crystals, Gallium, Electrons, Cladding, Pulsed laser operation, Aluminum, Continuous wave operation

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Proceedings Article | 11 May 2004 Paper

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Piotr Perlin, Mike Leszczynski, Pawel Prystawko, Robert Czernetzki, Przemek Wisniewski, Janusz Weyher, Grzegorz Nowak, Jola Borysiuk, Lucja Gorczyca, Tomasz Swietlik, Gijs Franssen, Agata Bering, Czeslaw Skierbiszewski, Izabella Grzegory, Tadek Suski, Sylwester Porowski

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.523580

KEYWORDS: Gallium nitride, Crystals, Semiconductor lasers, High power lasers, Diodes, Sapphire, Gallium, Temperature metrology, Mirrors, Etching

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Proceedings Article | 28 August 2002 Paper

Optoelectronic devices built on bulk GaN substrates

P. Perlin, I. Grzegory, M. Leszczynski, P. Prystawko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, M. Bockowski, B. Lucznik, G. Franssen, S. Porowski

Proceedings Volume 10303, 1030306 (2002) https://doi.org/10.1117/12.482622

KEYWORDS: Optoelectronic devices, Gallium nitride, Light emitting diodes, Semiconductor lasers, Crystals, Homoepitaxy, Optical properties, High power lasers, Diodes

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Proceedings Article | 17 April 2001 Paper

Epitaxy on GaN bulk crystals

M. Leszczynski, P. Prystawko, R. Czernecki, J. Lehnert, Piotr Perlin, P. Wisniewski, Cz. Skierbiszewski, T. Suski, G. Nowak, Fouad Karouta, J. Holst, I. Grzegory, S. Porowski

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425412

KEYWORDS: Gallium nitride, Crystals, Metalorganic chemical vapor deposition, X-ray diffraction, Sapphire, Epitaxy, Luminescence, Reflectivity, Single crystal X-ray diffraction, Atomic force microscopy

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Proceedings Article | 8 March 2001 Paper

Luminescence of nonthermalized electron-hole plasma in GaN epilayers

Saulius Jursenas, G. Kurilcik, N. Kurilcik, Gintautas Tamulaitis, K. Kazlauskas, Arturas Zukauskas, P. Prystawko, M. Leszczynski, T. Suski, Piotr Perlin, I. Grzegory, S. Porowski

Proceedings Volume 4318, (2001) https://doi.org/10.1117/12.417587

KEYWORDS: Luminescence, Gallium nitride, Plasma, Picosecond phenomena, Sapphire

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Showing 5 of 19 publications

Conference Committee Involvement (2)

Laser Technology 2012: Progress in Lasers

24 September 2012 | Szczecin, Poland

Laser Technology 2012: Applications of Lasers

24 September 2012 | Szczecin, Poland

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