Dr. TaeWan Kim Profile

Dr. TaeWan Kim

Professor at Jeonbuk National Univ

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Publications (7)

Proceedings Article | 16 March 2015 Paper

Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure

Yongkun Sin, Zachary Lingley, Mark Peterson, Miles Brodie, Steven Moss, Tae Wan Kim, Honghyuk Kim, Yingxin Guan, Kamran Forghani, Luke Mawst, Thomas Kuech

Proceedings Volume 9358, 93580I (2015) https://doi.org/10.1117/12.2076785

KEYWORDS: Transmission electron microscopy, Quantum wells, Gallium arsenide, Carrier dynamics, Heterojunctions, Temperature metrology, Annealing, Solar cells, Statistical analysis, Bismuth

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Proceedings Article | 8 February 2015 Paper

Quantum-cascade-laser active regions on metamorphic buffer layers

L. Mawst, A. Rajeev, J. Kirch, T. Kim, D. Botez, B. Zutter, P. Buelow, K. Schulte, T. Kuech, A. Wood, S. Babcock, T. Earles

Proceedings Volume 9370, 93700E (2015) https://doi.org/10.1117/12.2075457

KEYWORDS: Quantum cascade lasers, Stereolithography, Chemical mechanical planarization, Surface finishing, Etching, Diffraction, Gallium arsenide, Indium, Electroluminescence, Wet etching

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Proceedings Article | 7 March 2014 Paper

Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells

Yongkun Sin, Zachary Lingley, Stephen LaLumondiere, Nathan Wells, William Lotshaw, Steven Moss, Tae Wan Kim, Luke Mawst, Thomas Kuech

Proceedings Volume 8981, 89811A (2014) https://doi.org/10.1117/12.2037385

KEYWORDS: Gallium arsenide, Carrier dynamics, Temperature metrology, Multijunction solar cells, Transmission electron microscopy, Annealing, Indium gallium phosphide, Antimony, Germanium, Picosecond phenomena

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Proceedings Article | 25 March 2013 Paper

Carrier dynamics in bulk 1eV InGaAsNSb materials and epitaxial lift off GaAs-InAlGaP layers grown by MOVPE for multi-junction solar cells

Yongkun Sin, Stephen LaLumondiere, William Lotshaw, Steven Moss, Tae Wan Kim, Kamran Forghani, Luke Mawst, Thomas Kuech, Rao Tatavarti, Andree Wibowo, Noren Pan

Proceedings Volume 8620, 86201L (2013) https://doi.org/10.1117/12.2001528

KEYWORDS: Epitaxial lateral overgrowth, Gallium arsenide, Carrier dynamics, Picosecond phenomena, Antimony, Multijunction solar cells, Solar cells, Zinc, Electroluminescence, Annealing

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III-V multi-junction solar cells are based on a triple-junction design that consists of an InGaP top junction, a GaAs middle junction, and a bottom junction that employs either a 1eV material grown on the GaAs substrate or InGaAs grown on the Ge substrate. The most promising 1 eV material that is currently under extensive investigation is bulk dilute nitride such as InGaAsN(Sb) lattice matched to GaAs substrates. Both approaches utilizing dilute nitrides and lattice-mismatched InGaAs layers have a potential to achieve high performance triple-junction solar cells. In addition, it will be beneficial for both commercial and space applications if III-V triple-junction solar cells can significantly reduce weight and can be manufactured cost effectively while maintaining high efficiency. The most attractive approach to achieve these goals is to employ full-wafer epitaxial lift off (ELO) technology, which can eliminate the substrate weight and also enable multiple substrate re-usages. For the present study, we employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates, where carrier lifetime measurements are crucial in optimizing MOVPE materials growth. We studied carrier dynamics in InGaAsN(Sb) layers with different amounts of N incorporated. Carrier lifetimes were also measured from InGaAsN(Sb) layers at different stages of post-growth thermal annealing steps. Post-growth annealing yielded significant improvements in carrier lifetimes of InGaAsNSb double hetero-structure (DH) samples compared to InGaAsN DH samples possibly due to the surfactant effect of Sb. In addition, we studied carrier dynamics in MOVPE-grown GaAs-InAl(Ga)P layers grown on GaAs substrates. The structures were grown on top of a thin AlAs release layer, which allowed epitaxial layers grown on top of the AlAs layer to be removed from the substrate. The GaAs layers had various doping densities and thicknesses. We present our TR-PL results from both pre- and post-ELO processed GaAs-InAl(Ga)P samples.

Proceedings Article | 28 February 2012 Paper

Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells

Yongkun Sin, Stephen LaLumondiere, Brendan Foran, William Lotshaw, Steven Moss, Tae Wan Kim, Peter Dudley, Jeremy Kirch, Steven Ruder, Luke Mawst, Thomas Kuech

Proceedings Volume 8255, 825516 (2012) https://doi.org/10.1117/12.906424

KEYWORDS: Indium gallium arsenide, Chemical mechanical planarization, Gallium arsenide, Transmission electron microscopy, Surface roughness, Carrier dynamics, Solar cells, Indium gallium phosphide, Luminescence, Antimony

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Proceedings Article | 22 February 2012 Paper

Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application

TaeWan Kim, Toby Garrod, Kangho Kim, Jaejin Lee, Luke Mawst, T. Kuech, S. LaLumondiere, Y. Sin, W. Lotshaw, S. Moss

Proceedings Volume 8256, 82561D (2012) https://doi.org/10.1117/12.906961

KEYWORDS: Solar cells, Carbon, Gallium arsenide, Picosecond phenomena, Metals, Annealing, Antimony, External quantum efficiency, Vapor phase epitaxy, Antireflective coatings

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Proceedings Article | 21 February 2011 Paper

Carrier dynamics in MOVPE-grown bulk dilute nitride materials for multi-junction solar cells

Yongkun Sin, Stephen LaLumondiere, Toby Garrod, Tae Wan Kim, Jeremy Kirch, Luke Mawst, William Lotshaw, Steven Moss

Proceedings Volume 7933, 79330H (2011) https://doi.org/10.1117/12.873894

KEYWORDS: Picosecond phenomena, Annealing, Antimony, Gallium arsenide, Carrier dynamics, Carbon, Multijunction solar cells, Doping, Streak cameras, Diffusion

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Showing 5 of 7 publications

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