Dr. Thi Huong Ngo Profile

Dr. Thi Huong Ngo

at Univ Montpellier

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 9 March 2024 Presentation

Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Yvon Cordier, Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Eric Frayssinet, Stéphane Vézian

Proceedings Volume PC12886, PC128860N (2024) https://doi.org/10.1117/12.3007453

KEYWORDS: Transistors, Aluminum gallium nitride, Vacuum, Silicon nitride, Silicon, Oxides, Heterojunctions, Gallium nitride, Field effect transistors, Fabrication

Read Abstract +

Proceedings Article | 5 March 2021 Presentation + Paper

DUV LEDs based on AlGaN quantum dots

Julien Brault, Mohamed Al Khalfioui, Mathieu Leroux, Samuel Matta, Thi-Huong Ngo, Aly Zaiter, Aimeric Courville, Benjamin Damilano, Sébastien Chenot, Jean-Yves Duboz, Jean Massies, P. Valvin, Bernard Gil

Proceedings Volume 11686, 116860T (2021) https://doi.org/10.1117/12.2576135

KEYWORDS: Light emitting diodes, Quantum dots, Deep ultraviolet, Ultraviolet radiation, Ultraviolet light emitting diodes, Transmission electron microscopy, Structural design, Scanning electron microscopy, Ranging, Quantum optics

Read Abstract +

Proceedings Article | 14 March 2018 Presentation

Polar and semi-polar oriented InGaN-(In)GaN multiple quantum wells for red-light emitters (Conference Presentation)

Thi Huong Ngo, Bernard Gil , Benjamin Damilano , Aimeric Courville, Philippe De Mierry

Proceedings Volume 10532, 105321Z (2018) https://doi.org/10.1117/12.2287399

KEYWORDS: Quantum wells, Luminescence, Quantum efficiency, Internal quantum efficiency, Temperature metrology, Indium, Electrons, Physics

Read Abstract +

Proceedings Article | 19 April 2017 Presentation

Photo-induced droop in blue to red light-emitting GaInN-GaN heterostructures (Conference Presentation)

Thi Huong Ngo, Bernard Gil, Benjamin Damilano, Aimeric Courville, Philippe De Mierry

Proceedings Volume 10104, 101040R (2017) https://doi.org/10.1117/12.2250361

KEYWORDS: Gallium nitride, Current controlled current source, Heterojunctions, Quantum wells, Indium, Crystals, Modeling, Internal quantum efficiency

Read Abstract +

Proceedings Article | 13 March 2015 Paper

Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

Huong Thi Ngo, Daniel Rosales, Bernard Gil, Pierre Valvin, Benjamin Damilano, Kaddour Lekhal, Philippe de Mierry

Proceedings Volume 9363, 93630K (2015) https://doi.org/10.1117/12.2076208

KEYWORDS: Luminescence, Indium, Quantum wells, Temperature metrology, Light emitting diodes, Dielectric polarization, Interfaces, Heterojunctions, Time metrology, Gallium nitride

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years