Numerous precision metrology systems for detecting quanta of any kind are based on silicon detectors. One example are silicon detectors used in scanning electron microscopes (SEM) for electron detection. The need to investigate objects at the very near surface like e.g. cells in biology pushes the scientific progress for these silicon detectors. To study surface near regions of e.g. biological objects electrons with low energies around 500eV are necessary. Unfortunately, the quantum efficiency for such low energy electrons of state-of-the-art electron detectors is low or even non-existent. In this contribution the development of silicon electron detectors with large quantum efficiencies of more than 55% for electrons with an energy of 500eV is presented. The crucial steps in the development like the thin entrance window and a very shallow junction will be discussed and analyzed by simulation and experiments like secondary ion mass spectrometry (SIMS) measurements at CiS.
Numerous precision metrology systems for detecting quanta of any kind are based on silicon detectors. Recently, low-gain avalanche detectors (LGAD) with fast response and reduced noise level have been proposed. Beneficial applications of LGADs developed by CiS [1] in quantum detection e.g. in electron detection systems will be shown.
Nevertheless, under strong irradiation the gain layer of theses LGADs disappears possibly due to formation of ASi-Sii-defects.[2] These defects are point defects in silicon with several metastable configurations in 3 charge states. These are controllable e.g. by light and temperature. Some of them are luminescing, making this defect an interesting candidate in quantum applications, as well. Targeted manipulation by light and temperature of these PL lines in the indium (InSi-Sii) and thallium (TlSi-Sii) case will be shown. Progress in ASi-Sii-defect modelling will be presented and implications for LGAD development and applications in quantum science of these intereseting defcts in silicon are pushed forward.
[1] K. Lauer et al., Phys. Status Solidi A 219(17), 2200177 (2022).
[2] K. Lauer et al., Phys. Status Solidi A 219(19), 2200099 (2022).
We propose a new biasing concept for superconducting nanowire single photon detectors (SNSPD).
It features the frequency-voltage relation of a Josephson junction to generate a bias supply with quantum precision.
The quantum bias concept is characterized by a very low resistor and a frequency controlled noise-free quantum voltage source. In the first experiments, we intentionally slow down the time constant by using a very small bias resistor. We obtain an intrinsic time constant of about 100μs. Corresponding to this time constant, the generated current pulses for the Josephson junction through the SNSPD cause in time-average a constant bias current.
The SNSPD as well as the Josephson junction are based on superconducting thin film technology and can be fabricated in general on the same substrate.
Surface disinfection has taken on a new role in the context of the corona pandemic. UVC modules based on LED chips strive to replace mercury vapor lamps. However this will only be achieved if the necessary optical performance for disinfection can be guaranteed. We would like to present the development of potting materials for UVC LED chips. The aim was to find a potting material for use at a wavelength of 250 nm, which is sufficiently transparent, easy to process and which remains stable in its properties for many 100 hours at these wavelengths. Furthermore, the total reflection in the LED base body should be minimized by a refractive index of the cured material n >> 1.4. In addition to the aspects of material development, metrological requirements and long-term studies are also presented. We have succeeded in developing a potting technology that can greatly increase the performance of the UVC LEDs by up to 70%.
Deep ultraviolet (UV) light emitting diodes (LEDs) have a wide range of applications such as water treatment, medical diagnostics, sterilization of medical devices and gas measurement. Depending on the desired application, the emission characteristics of UV light must be optimized. In addition to improving the external quantum efficiency, the radiation properties of the UV LED chip can be influenced and supported by the performance of the housing and the assembly technology.
We will present some results on how to improve the optical performance of UV LED chips through optically UV-transparent materials, which are complemented by some basic aging studies. Furthermore, the influence of differently shaped lenses in combination with and without an integrated aluminum reflector is presented.
We want to show the influence of the different optical and thermal elements individually and in combination to show the possibilities to design the optimal radiator module with the desired properties.
The usage of UV-LEDs is growing for a variety of applications such as the disinfection of water, the sterilization of medical equipment and the industrial UV curing. It is important that the wavelength and the intensity of radiation needed for the specific application is reliably provided and covers the whole target area evenly distributed.
The individual high precision power supply and control of UV-LEDs is the main application of the eyIC4UV-01 chip. The eyIC4UV-01 is an integrated circuit that can measure the light intensity, temperature, current and forward voltage of a connected UV-LED.
Miniaturized versions of nowadays tabletop setups will be necessary for a successful commercialization of quantum cryptography and computing. Within this contribution, we present a concept for downsizing the Hanbury Brown-Twiss configuration. The design is based on optical simulations, with the aim of finding the best compromise of detection efficiency and level of miniaturization. Since scattering effects are important for evaluating the system’s performance, a complete scattering analysis got performed.
An advanced infrared emitter, consisting of a non-periodic silicium-microstructure and a platinium-nano-composition, which enables extraordinary highly emission intensities is presented. A spectral broadband emission coefficient ε of nearly 1 is achieved. The foundation of the emitter is a MEMS hot plate design containing a high temperature stable molybdenum silicide resistance heater layer embedded in a multilayer membrane consisting of silicon nitride and silicon oxide. The temperature resistance of the silicon-platinum micro-nanostructure up to 800 °C is secured by a SiO2 protection layer. The long-term stability of the spectral behavior at 750 °C has been demonstrated over 10,000 h by FTIR measurements. The low thermal mass of the multilayer MEMS membrane leads to a time constant of 28 ms which enables high chopper frequencies. A precondition for long term stability under rough conditions is a real hermetic housing. High temperature stable packaging technologies for infrared MEMS components were developed.
For miniaturized optical fiber coupled MOEMS systems, fiber coupling on chip level is necessary. Therefore a silicon chip based optical fiber coupling with high position accuracy is introduced. In this paper, we present the fiber chip coupling on two examples: A superconducting single photon detector (SSPD) and a miniaturized fiber Bragg grating sensor. In case of the SSPD position accuracy between SSPD and optical fiber of ± 1 μm is necessary.
In this paper we show the developed alignment system and the proof of the position accuracy on silicon test chips. Further, we show first experiments of a fiber coupled superconducting test structure in a closed cycle cryostat with regard to stability of the chip stack and thermal connectivity to the cryostat.
The fiber coupling of the fiber Bragg grating sensor is used to miniaturize the sensor overall construction. The fiber Bragg sensor consists of two stacked Silicon photodiodes. The top photodiode is fabricated in a cavity within a remaining 50 μm Silicon membrane and therefore detects only the shorter wavelength range. The bottom photodiode detects the transmitted longer wavelengths. The fiber coupling chip is mounted on top of the photodiode stack. This leads to a compact chip stack with included fiber coupling, without the need for large fiber connectors or ferrule holders. Further, we demonstrate the mounting of the fiber Bragg sensor on a flexible PCB and its performance.
We present and discuss the infrared properties of molybdenum silicide thin films, molybdenum silicide photonic crystals and the electromigration of molybdenum silicide. Magnetronsputtered and annealed molybdenum silicide layers were investigated via infrared spectral ellipsometry. Simulations of optical properties of molybdenum silicide photonic crystals [metal-insulator-metal structures] show that properties influenced by the size of the structures differ to those of widely used photonic crystals made of Ag. The infrared absorption of MIM-structures comprising of a solid molybdenum silicide layer and one molybdenum silicide layer in form of disks were simulated for different disk diameters and layer thicknesses. A first maximum of absorption (at about 2740 nm) is almost independent of the diameter of the molybdenum silicide disk. A second maximum of absorption (7120 nm -7750 nm) shows an increase of its resonance wavelength with increasing disk diameter. A third maximum of absorption (at about 11000nm) instead shows a respective decrease. In the simulations the thicknesses of the metal layers and the dielectric layer were varied. Changes in the thickness of the dielectric layer caused greater changes in the absorption spectra than changes in the thicknesses of the metal layers. For the application in thermal emitters, the knowledge of electromigration properties of molybdenum silicide layers is crucial. Investigations via accelerated tests with different acceleration factors are demonstrated for test structures. We investigated structures based on molybdenum silicide and for comparison with a well known system analogous structures made of aluminum. We find that molybdenum silicide shows considerably lower electromigration than aluminium.
The usage of UV LEDs is getting attractive for application such as phototherapy, plant growth, and disinfection due to the wavelength selective, narrow-band emission and a high potential for miniaturization of LED devices. Besides these benefits, the demands on optical power and long-term stability for these applications can often be well satisfied. For UVB LEDs most promising applications are in the field of medical skin therapy and novel concepts of horticulture and plant growth (irradiation of plants for the generation of phytamines or to reduce hormone-like mixtures). UVC applications focus on disinfection of air, surfaces and water at 265 nm or 280 nm. Each application field requires an individual UV dose, which is connected with the optical power output of the LED, and thus the number of LEDs and their long term stability. Typical doses for skin irradiation is 20 mJ/cm2 at 310 nm and for water disinfection 20-60 mJ/cm2 at 280 nm depending which target reduction factor log reduction of germicides is required. In this work a discussion on different factors influencing the reliability of LED modules, summarizing several years of research in this field will be given. Degradation effects are shown depending on LED design itself as well as the device assembly architecture including different mounting techniques. The most promising assembly technique was tested by a sample series of twice 400 single LED packages with a total yield of 87.7 % after mounting of UVB LEDs in single LED cases, cascading to an array on a main board by secondary soldering and burn-in of 48 hour at 50mA. In total 4% of the yield loss results by soldering issues of the LED on submount as well as another 8 % yield loss was measured after cascading of single LED packages on main board. Due to the burn-in process additional twenty UVB LEDs were lost. These reliability issues will be discussed using selected “state-of-the-art” LED device structures and examples of testing these LED devices in UV lighting lamp systems built at OSA opto Light will be given.
Deep ultraviolet (UV) light emitting diodes (LEDs) have a wide range of applications such as water treatment, medical diagnostics, medical device sterilization and gas sensing. The internal quantum efficiency of UVB and UVC LEDs is extremely low. Added to this is the high refractive index of the sapphire substrate. The electrical input power is converted to more than 95% to heat. Typically, ceramic packages of alumina with metal core or aluminum nitride are used. These promise a minimized thermal resistance. Comparative thermal simulations show that even Si with slightly lower thermal conductivity of 150 W / mK compared to aluminum nitride with 180 to 200 W / mK does not necessarily impair thermal management. From the thermal and optical calculations, basic information was extracted that forms the basis of the Si package layout. The advantage of the Si packing due to the possibility of integrating functional components has been worked out. An optimized Si package is presented that meets in particular the requirements of the assembly and packaging technology of UVB and UVC LEDs. The process technology was designed and implemented. The first samples with integrated protection diode, an optimized reflector and an optically adjusted single Fresnel lens are presented. The Si packages are designed for the flip-chip technology of UV LEDs with SnAg soldering, thermo-compression or thermosonic bonding and silver sintering. Furthermore, an outlook is given on the possibilities of an encapsulating technology to improve the light extraction.
Higher optical power and higher UV doses come along with a higher operation temperature of UV LED based light sources. Silver sintered pastes offer a robust lead-free alternative to solder pastes increasing the lifetime of the device and enabling higher heat dissipation. Due to the design of UV LEDs, they have to be connected to a heat spreading submount by flip chip joining. Well established processes are flip chip soldering and thermal compression bonding. However, both methods do not achieve optimal heat dissipation in practice. Solder joining material offers a thermal conductivity in the range of 50-60 W/mK which can be further reduced by voids or uncovered areas. Gold contacts for thermal compression bonding offer excellent thermal conductivity of 320 W/mK, but show a maximum coverage of 50- 70%. Silver sinter paste adapted to the UV LED contact system, is a promising alternative flip chip joining material. In order to evaluate different joining methods, UV LED devices were assembled by thermal compression bonding, diffusion bonding, soldering and sintering and compared according to, thermal resistivity, optical-electrical and mechanical behavior and reliability issues. In addition, different silver sinter pastes were tested and their thermal resistivity was adjusted via processing parameters (pressurization, sintering temperature and time). For pressureless approaches the thermal conductivity and layer thickness are in the range of solder material or below. Using pressure for sintering, several advantages will be introduced. The interconnection thickness can be adjusted to be as thin as possible (below 5 micron), which enhanced the heat dissipation. A thin sintered layer of a few microns shows a lower shrinkage and a better adhesion to the joining partners. The thermal conductivity can be enhanced as well. After sintering, the silver interconnection layer is thermally stable up to 800 °C. These facts speak for sintering pastes as a real alternative for UV LED assembly.
Characterising the amount and the purity of nucleic acid is an important step in state of the art polymerase chain reaction (PCR). In most cases, the analysis is done by stand-alone equipment. For the measurement, a small amount out of the PCR-process has to be removed. Furthermore, the evaluation of the measured spectra occurs only at three wavelengths (230 nm, 260 nm, 280 nm). Therefore, it should be possible to monitor the PCR-process in situ. We demonstrate an illumination unit with three UV-LEDs (245 nm, 265 nm and 280 nm). Every LED is collimated by two lenses. Two longwave-pass filters merge the optical axes of the different wavelength. Lenses and filters are commercial available. The illumination unit is available with and without fiber coupling. The optical behavior of the illumination unit will be shown and discussed. Further, we investigate the observed peak position of the supporting points in dependence of the impurity concentration of an example solution.
Fluorescence lifetime determination is widely utilized for bioscience research and analysis. The fluorescence stimulation in conventional systems is usually done with expensive picosecond laser systems. We present a cost-effective 370 nm LED based excitation module and a detection unit based on a Silicon Photomultiplier (SiPM). The functionality of the excitation module as well as the detection module is demonstrated with the fluorescence dye ATTO 390.
For a fast analysis of the fluorescence signal detected by the SiPM, we developed an ASIC for fluorescence histogram recording. The ASIC determines the time between excitation pulse and incoming fluorescence photon with an accuracy of about 80 ps. The ASIC blind time after the excitation pulse is configurable. The determined time is saved in bins. The width of the bins is programmable. Output of the ASIC is a histogram with the counted amount of photons at the different times after excitation. This histogram equals the fluorescence response of the dye. The fluorescence lifetime can be calculated out of this histogram.
Fluorescence lifetime determination is widely utilized for bioscience research and analysis. The fluorescence stimulation in conventional systems is usually done with expensive picosecond laser systems. We present a cost-effective 370 nm LED based excitation module with a pulse FWHM of 1 ns and a beam diameter of 4 mm. The functionality of the excitation module was demonstrated with the fluorescence dye ATTO 390 with a fluorescence lifetime of 5 ns. The width of 8 mm of the excitation module enables the parallel measurement of adjacent sample chambers of a well plate. Further, a silicon UV-photodiode is designated to monitor the output power of the LED. For a fast analysis of the fluorescence signal, we developed an ASIC for fluorescence histogram recording. The ASIC determines the time between excitation pulse and incoming fluorescence photon with an accuracy of about 80 ps. The ASIC blind time after the excitation pulse is configurable. The determined time is saved in bins. The width of the bins is programmable. For fluorescence light detection a silicon photomultiplier (SiPM) is used. Output of the ASIC is a histogram with the counted amount of photons at the different times after excitation. This histogram equals the fluorescence response of the dye. The fluorescence lifetime can be calculated out of this histogram.
UV LEDs are usually mounted in flip-chip technology by soldering or thermocompression bonding to allow the UV light to be emitted through the sapphire substrate. The thermal conductivity of solders is considerably smaller than that of the typical metals used for packaging such as Cu, Ag or Au. For thermosonic- or thermocompression bonding pure metals can be used, however, the contact area is reduced in comparison to soldered contacts. Thermal simulations with different ratios of the number and size of stud bumps to the total area illustrate the direct influence of these parameters on the thermal resistance. The deformation during the bonding process as a function of the processing temperature and the applied force is discussed together with the influence of preprocessing, e.g. coining. Approaches are presented to increase the bonding area to 70 % of the total pad area of the chip. The improvements in the thermal resistance are demonstrated by lock-in-thermography and SEM investigations.
Superconducting single photon detectors are promising candidates for cutting-edge applications like space-to-ground communication and quantum-key-distribution. The challenge is to transfer the assembly technology from university research to industrial processes. Especially the positioning of the optical fiber with respect to the active area of the superconducting detector are open questions. We demonstrate the operation of a superconducting nanowire single photon detector (SNSPD) in a closed cycle cryostat. The thermal coupling between superconducting detector chip and closed-cycle cryostat is investigated. The possibility to mount the optical fiber in an RIE-ICP-etched hole in a silicon carrier wafer is demonstrated. Different illumination wavelength and intensities are used to validate the SNSPD assembly in the closed cycle cryostat. Further, an advanced package of the silicon carrier wafer and the SNSPD-chip is introduced. In this package, the SNSPD-chip is mounted via flip-chip technology on the silicon carrier wafer. The striven flip-chip position accuracy of ± 1 μm ensures the accurate coupling between optical fiber and active area of the SNSPD.
Interference of light provides a high precision, non-contact and fast method for measurement method for distances.
Therefore this technology dominates in high precision systems. However, in the field of compact sensors capacitive,
resistive or inductive methods dominates. The reason is, that the interferometric system has to be precise adjusted and
needs a high mechanical stability. As a result, we have usual high-priced complex systems not suitable in the field of
compact sensors. To overcome these we developed a new concept for a very small interferometric sensing setup. We
combine a miniaturized laser unit, a low cost pixel detector and machine vision routines to realize a demonstrator for a
Michelson type micro interferometer. We demonstrate a low cost sensor smaller 1cm3 including all electronics and
demonstrate distance sensing up to 30 cm and resolution in nm range.
High power LEDs have conquered the mass market in recent years. Besides the main development focus to achieve higher productivity in the field of visible semiconductor LED processing, the wavelength range is further enhanced by active research and development in the direction of UVA / UVB / UVC. UVB and UVC LEDs are new and promising due to their numerous advantages. UV LEDs emit in a near range of one single emission peak with a width (FWHM) below 15 nm compared to conventional mercury discharge lamps and xenon sources, which show broad spectrums with many emission peaks over a wide range of wavelengths. Furthermore, the UV LED size is in the range of a few hundred microns and offers a high potential of significant system miniaturization. Of course, LED efficiency, lifetime and output power have to be increased [1]. Lifetime limiting issues of UVB/UVC-LED are the very high thermal stress in the chip resulting from the higher forward voltages (6-10 V @ 350 mA), the lower external quantum efficiency, below 10 % (most of the power disappears as heat), and the thermal resistance Rth of conventional LED packages being not able to dissipate these large amounts of heat for spreading. Beside the circuit boards and submounts which should have maximum thermal conductivity, the dimension of contacts as well as the interconnection of UV LED to the submount/package determinates the resolvable amount of heat [2]. In the paper different innovative interconnection techniques for UVC-LED systems will be discussed focused on the optimization of thermal conductivity in consideration of the assembly costs. Results on thermal simulation for the optimal contact dimensions and interconnections will be given. In addition, these theoretical results will be compared with results on electrical characterization as well as IR investigations on real UV LED packages in order to give recommendations for optimal UV LED assembly.
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